B GB 741L 7E SD B GB 741L 7E SD as Low N ois e A mplifi er f or Applic a tions i n 3 00 MHz to 5 G Hz Applic atio n N ote A N 207 Revision: Rev. 1.0 2010-06-28 RF and P r otecti on D evic es Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB741L7ESD BGB741L7ESD for 300MHz to 5GHz Applications Application Note AN207 Revision History: 2010-06-28 Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19 Application Note AN207, Rev. 1.0 3 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz Table of Content 1 BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz ........................... 5 2 Application Information ..................................................................................................................... 7 3 Summary of Measurement Results .................................................................................................. 8 4 BGB741L7ESD Application Schematic .......................................................................................... 12 5 Measured Graphs for 1.8V ............................................................................................................... 14 6 Measured Graphs for 3.0V ............................................................................................................... 18 7 Measured Graphs for 4.0V ............................................................................................................... 22 8 Evaluation Board and layout Information ...................................................................................... 26 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 30 Block Diagram of the BGB741L7ESD. ................................................................................................. 6 Application diagram of th BGB741L7ESD for 300 MHz to 5GHz applications. ................................... 7 Schematics of the BGB741L7ESD for 300 MHz to 5GHz applications. ............................................ 12 Characteristics current/voltage in function of the resistor Rext for the BGB741L7ESD biasing. ....... 13 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ................ 14 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ............................. 14 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ......................... 15 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ...................... 15 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ..................... 16 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. ... 16 rd Input 3 interception point of the BGB741L7ESD for 300MHz to 5GHz applications at 1.8V. .......... 17 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 1.8V. ......................... 17 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ................ 18 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ............................. 18 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ......................... 19 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ...................... 19 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ..................... 20 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. ... 20 rd Input 3 intercept point of the BGB741L7ESD for 300MHz to 5GHz applications at 3.0V. ............... 21 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 3.0V. ......................... 21 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ................ 22 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ............................. 22 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ......................... 23 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ...................... 23 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ..................... 24 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. ... 24 rd Input 3 intercept point of the BGB741L7ESD from 300MHz to 5GHz applications 4.0V. ............... 25 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 4.0V. ......................... 25 Photo picture of Evaluation Board...................................................................................................... 26 PCB Layer Information ....................................................................................................................... 26 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Pin definition and function .................................................................................................................... 6 Summary of Measurement Results for UHF 300-860MHz .................................................................. 8 Summary of Measurement Results for GPS 1575MHz ....................................................................... 9 Summary of Measurement Results for WLAN/WiMax 2300MHz to 2700MHz .................................. 10 Summary of Measurement Results for WiMax 3300MHz to 3700MHz ............................................. 11 Bill-of-Materials................................................................................................................................... 12 Application Note AN207, Rev. 1.0 4 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz 1 BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz The MMIC LNA BGB741L7ESD from Infineon Technologies is a high performance broadband amplifier for wireless solutions from 300MHz up to 5GHz. Built up with Silicon Germanium (Si:Ge) technology, the BGB741L7ESD offers an excellent noise figure over broad frequency band. The biasing and stabilization circuits built inside the BGB741L7ESD reduce the number of external parts down to 6 and make the BGB741L7ESD interesting for compact and high performance LNA designs. The component can be used from 1.8V until 4.0V and from 5mA to 30mA. Furthermore, this device includes an integrated ESD protection circuit on chip which protects the device upto 4.0kV at the input pin and 2.5kV at the output pin (according to Human Body Model). A CMOS-technology compliant power-on/off function is also integrated in the device. For environments more sensitive to ESD discharges, the device can be strengthened by using an additional ESD diode at the RF input of the circuit (ESD0P2RFL ESD diodes series from Infineon Technologies for example). The component will be enhanced against stronger ESD aggression potentially caused by non protected devices (like antenna modules). Application Note AN207, Rev. 1.0 5 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD: Broadband MMIC LNA for application from 300MHz to 5GHz The first figure presents the block diagram of the BGB741L7ESD. The device is Packaged in TSLP-7-1 format and the pinning information are summarized in the table 1. Figure 1 Table 1 Pin N° Block Diagram of the BGB741L7ESD. Pin definition and function Name Function 1 Vcc 2 Vbias Output of biasing circuitry to the transistor base 3 RFin RF input of the BGB741L7ESD LNA 4 RFout 5 Vctrl Power off/on mode Function 6 Adj Current adjustment (please see figure 2 and 3) 7 GND Application Note AN207, Rev. 1.0 Voltage supply RF output of the LNA Ground of the BGB741L7ESD 6 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Application Information 2 Application Information This application note presents the performances of the BGB741L7ESD in a broadband mode from 300MHz to 5GHz. Thus, this LNA fits for applications like UHF, ISM bands, GPS, UMTS, WLAN 2.4GHz and WiMax upto 3.8GHz. The following application diagram (please see the figure 2) shows where the BGB741L7ESD can be used on a transmission/reception signal chain. Figure 2 Application diagram of the BGB741L7ESD for 300 MHz to 5GHz applications. This document provides the results for several bands (UHF, GPS, WLAN 2.4G, WiMax) in relation with the current/voltage biasing (Please see the Table 2, 3, 4 and 5 below). Please note that the gains in-band (Table 2, 3, 4 and 5) are referenced to the lowest gain measured in the described frequency band. The related 3 rd order intercept point and -1dB compression point are measured at the frequency point described in the comments. These measurements are measured in-band without out-of-band jammer signalsThe device is unconditionally stable from DC until 10GHz. Application Note AN207, Rev. 1.0 7 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Summary of Measurement Results 3 Summary of Measurement Results Table 2 Summary of Measurement Results for UHF 300-860MHz Parameter Symbol Value Unit Frequency Range Freq 300…860MHz MHz DC Voltage Vcc DC Current Icc 6 10 20 6 10 20 6 10 20 mA Gain G 18.2 20.0 21.7 18.0 19.8 21.5 18.2 19.8 21.6 dB Pin=-30dBm Noise Figure NF 1.8 1.7 1.8 1.85 1.7 1.75 1.85 1.7 1.8 dB SMA and PCB loss of 0.1 dB included RLin 9.6 16.6 9.9 9.3 16.0 9.2 9.1 16.75 9.4 dB Pin=-30dBm RLout 8.3 14.1 13.2 8.1 12.7 11.95 8 13.4 12.2 dB Pin=-30dBm IRev 21.4 23.0 25.3 21.4 22.9 25.3 21.4 22.8 25.4 dB Pin=-30dBm Input P1dB IP1dB -7.7 -10.1 -12.5 -4.9 -7.6 -9.7 -3.3 -5.9 -8.4 dBm Output P1dB OP1dB 9.5 8.9 8.2 12.1 11.2 10.8 13.9 12.9 12.2 dBm Input Return Loss Output Return Loss Reverse Isolation 1.8 3.0 V 4.0 Input IP3 IIP3 -0.9 2.2 1.3 -1.4 3.1 3.6 -1.8 3.3 4.1 Output IP3 OIP3 17.3 22.2 23.0 16.6 22.9 25.1 16.4 23.1 25.7 Stability k Application Note AN207, Rev. 1.0 8 / 28 2010-06-28 Measured @ 860MHz In-band, f1=859MHz, f2=860MHz, dBm Pin=-30dBm dBm -- >1 Note/Test Condition Unconditionally stable from DC to 10GHz BGB741L7ESD for 300MHz to 5GHz Applications Summary of Measurement Results Table 3 Summary of Measurement Results for GPS 1575MHz Parameter Symbol Value Unit Frequency Range Freq 1575 MHz DC Voltage Vcc DC Current Icc 6 10 20 6 10 20 6 10 20 mA Gain G 17.6 19.5 21.2 17.6 19.4 21.2 17.7 19.4 21.3 dB Pin=-30dBm Noise Figure NF 1.2 1.15 1.3 1.25 1.2 1.25 1.25 1.2 1.3 dB SMA and PCB loss of 0.1 dB included RLin 14.4 14.8 10.7 15.3 15.8 10.0 14.4 15.4 10.6 dB Pin=-30dBm RLout 14.3 26.3 20.8 14.4 23.3 17.3 14.1 25.2 18.5 dB Pin=-30dBm IRev 21.9 23.5 25.8 21.8 23.3 25.8 21.8 23.3 25.8 dB Pin=-30dBm Input P1dB IP1dB -7.6 -10.0 -12.7 -4.8 -7.5 -9.6 -3.2 -5.8 -8.3 dBm Output P1dB OP1dB 9.0 8.5 7.5 11.8 10.9 10.6 13.5 12.6 12.0 dBm Input Return Loss Output Return Loss Reverse Isolation 1.8 3 V 4 Input IP3 IIP3 0.2 1.8 -0.2 -0.8 3.5 3.2 -0.8 3.9 3.5 Output IP3 OIP3 17.8 21.3 21.0 16.8 22.9 24.4 16.9 23.3 24.8 Stability k Application Note AN207, Rev. 1.0 9 / 28 2010-06-28 Measured @ 1575MHz In-band, f1=1575MHz, f2=1576MHz, dBm Pin=-30dBm dBm -- >1 Note/Test Condition Unconditionally stable from DC to 10GHz BGB741L7ESD for 300MHz to 5GHz Applications Summary of Measurement Results Table 4 Summary of Measurement Results for WLAN/WiMax 2300MHz to 2700MHz Parameter Symbol Value Unit Frequency Range Freq 2300...2700 MHz DC Voltage Vcc DC Current Icc 6 10 20 6 10 20 6 10 20 mA Gain G 15.8 17.7 19.4 15.6 17.5 19.5 16.1 17.7 19.6 dB Pin=-30dBm Noise Figure NF 1.4 1.3 1.45 1.5 1.4 1.45 1.45 1.35 1.45 dB SMA and PCB loss of 0.1 dB included RLin 9.3 10.5 10.3 9.75 11.0 11.0 9.5 10.9 11.0 dB Pin=-30dBm RLout 9.6 12.8 17.8 8.8 11.9 17.3 9.75 12.6 17.4 dB Pin=-30dBm IRev 22.7 24.2 26.2 22.7 24.1 26.3 22.7 24.1 26.3 dB Pin=-30dBm Input P1dB IP1dB -6.7 -9.3 -11.9 -4.0 -6.9 -9.1 -1.9 -4.9 -7.6 dBm Output P1dB OP1dB 8.1 7.4 6.5 10.6 9.6 9.4 13.2 11.8 11.0 dBm Input Return Loss Output Return Loss Reverse Isolation 1.8V 3V V 4V Input IP3 IIP3 0.2 3.8 0.5 -1.2 4.6 4.0 -0.8 5.6 5.2 Output IP3 OIP3 16.0 21.5 19.9 14.4 12.9 15.5 15.3 23.3 14.4 Stability k Application Note AN207, Rev. 1.0 10 / 28 2010-06-28 Measured @ 2700MHz In-band, f1=2699MHz, f2=2700MHz, dBm Pin=-30dBm dBm -- >1 Note/Test Condition Unconditionally stable from DC to 10GHz BGB741L7ESD for 300MHz to 5GHz Applications Summary of Measurement Results Table 5 Summary of Measurement Results for WiMax 3300MHz to 3700MHz Parameter Symbol Value Unit Frequency Range Freq 3300…3700 MHz DC Voltage Vcc DC Current Icc 6 10 20 6 10 20 6 10 20 mA Gain G 14.3 16.1 17.6 14.2 16.1 17.8 14.5 16.1 17.9 dB Pin=-30dBm Noise Figure NF 1.6 1.45 1.6 1.65 1.5 1.6 1.65 1.5 1.65 dB SMA and PCB loss of 0.1 dB included RLin 8.3 9.0 9.0 8.0 9.1 9.7 8.4 9.3 9.3 dB Pin=-30dBm RLout 8.9 12.6 15.7 7.5 9.5 11.8 9.3 10.6 15.8 dB Pin=-30dBm IRev 23.7 25.2 27.1 24.1 25.3 27.3 23.7 25.2 27.2 dB Pin=-30dBm Input P1dB IP1dB -5.6 -8.1 -11.0 -3.0 -5.9 -8.3 -0.8 -4.1 -6.7 dBm Output P1dB OP1dB 7.7 7.0 5.6 10.2 9.2 8.5 12.7 11.0 10.2 dBm Input Return Loss Output Return Loss Reverse Isolation 1.8V 3V V 4V Input IP3 IIP3 1.3 4.0 1.3 0.3 5.1 4.3 0.1 6.4 5.7 Output IP3 OIP3 15.6 20.1 18.9 14.5 21.2 22.1 14.6 22.5 23.6 Stability k Application Note AN207, Rev. 1.0 11 / 28 2010-06-28 Measured @3700MHz In-band, f1=3699MHz, f2=3700MHz, dBm Pin=-30dBm dBm -- >1 Note/Test Condition Unconditionally stable from DC to 10GHz BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD Application Schematic 4 BGB741L7ESD Application Schematic Figure 3 Schematics of the BGB741L7ESD for 300 MHz to 5GHz applications. Table 6 Bill-of-Materials Symbol Value Unit Size Manufacturer C1 100 pF 0402 Various DC block/Input matching C2 1 uF 0402 Various RF grounding C3 1 uF 0402 Various RF grounding C4 100 pF 0402 Various DC block/Output matching L1 27 nH 0402 Murata LQG15A DC feed/ Input matching L2 27 nH 0402 Murata LQG15A DC feed/Output matching Rext 0…∞ Ω 0402 Various Bias current/voltage setting (please refer to Figure 4) R1 0 Ω 0402 Various Jumper, not used N1 BGB741L7 TSLP-7-1 Infineon Technologies SiGe:C MMIC LNA Application Note AN207, Rev. 1.0 12 / 28 Comment 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications BGB741L7ESD Application Schematic 4.1 Bias Current/Voltage Configuration Figure 4 Characteristics current/voltage in function of the resistor Rext for the BGB741L7ESD biasing. This graph shows how to find the right external resistor Rext (see Figure 1) to get the working point needed for the desired application. The biasing point is important to set-up since, it affects all the signal parameters like S-parameters, linearity in Power (P1dB), linearity in frequency (IIP3) and the Noise generated by the circuit (Please refer to the table 2,3,4 and 5 for performances comparisons) . Application Note AN207, Rev. 1.0 13 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 1.8V 5 Measured Graphs for 1.8V Insertion Power Gain at 1V8 25 1.8V 6mA 1.8V 10mA 1.8V 20mA 20 15 10 0 Figure 5 1000 2000 3000 Frequency (MHz) 4000 5000 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. Noise figure at 1V8 2 1.8V 6mA 1.8 1.8V 10mA 1.8V 20mA 1.6 1.4 1.2 1 0 Figure 6 1000 2000 3000 Frequency (MHz) 4000 5000 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. Application Note AN207, Rev. 1.0 14 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 1.8V Input Matching at 1V8 0 1.8V 6mA 1.8V 10mA 1.8V 20mA 2000 2500 3000 Frequency (MHz) 3500 -5 -10 -15 -20 0 Figure 7 500 1000 1500 4000 4500 5000 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. Output Matching at 1V8 0 1.8V 6mA 1.8V 10mA 1.8V 20mA -5 -10 -15 -20 0 Figure 8 500 1000 1500 2000 2500 3000 Frequency (MHz) 3500 4000 4500 5000 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. Application Note AN207, Rev. 1.0 15 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 1.8V Reverse Isolation at 1V8 30 25 20 1.8V 6mA 1.8V 10mA 1.8V 20mA 15 0 Figure 9 500 1000 1500 2000 2500 3000 Frequency (MHz) 3500 4000 4500 5000 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. Input 1dB compression point at 1V8 5 1.8V 6mA 1.8V 10mA 1.8V 20mA 0 -5 -10 -15 -20 0 Figure 10 1000 2000 3000 Frequency (MHz) 4000 5000 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 1.8V. Application Note AN207, Rev. 1.0 16 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 1.8V Input 3rd order Intercept point at 1V8 10 1.8V 6mA 1.8V 10mA 1.8V 20mA 5 0 -5 -10 0 Figure 11 1000 2000 3000 Frequency (MHz) 4000 5000 rd Input 3 interception point of the BGB741L7ESD for 300MHz to 5GHz applications at 1.8V. Stability K Factor at 1V8 5 4 3 2 1 1.8V 6mA 1.8V 10mA 1.8V 20mA 0 0 Figure 12 2000 4000 6000 Frequency (MHz) 8000 10000 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 1.8V. Application Note AN207, Rev. 1.0 17 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 3.0V 6 Measured Graphs for 3.0V Insertion Power Gain at 3V 25 3V 6mA 3V 10mA 3V 20mA 20 15 10 0 Figure 13 1000 2000 3000 Frequency (MHz) 4000 5000 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. Noise figure at 3V 2 3V 6mA 1.8 3V 10mA 3V 20mA 1.6 1.4 1.2 1 0 Figure 14 1000 2000 3000 Frequency (MHz) 4000 5000 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. Application Note AN207, Rev. 1.0 18 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 3.0V Input Matching at 3V 0 3V 6mA 3V 10mA 3V 20mA 2000 2500 3000 Frequency (MHz) 3500 -5 -10 -15 -20 0 Figure 15 500 1000 1500 4000 4500 5000 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. Output Matching at 3V 0 3V 6mA 3V 10mA 3V 20mA -5 -10 -15 -20 0 Figure 16 500 1000 1500 2000 2500 3000 Frequency (MHz) 3500 4000 4500 5000 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. Application Note AN207, Rev. 1.0 19 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 3.0V Reverse Isolation at 3V 30 25 20 3V 6mA 3V 10mA 2000 2500 3000 Frequency (MHz) 3500 3V 20mA 15 0 Figure 17 500 1000 1500 4000 4500 5000 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. Input 1dB compression point at 3V 5 3V 6mA 3V 10mA 3V 20mA 0 -5 -10 -15 -20 0 Figure 18 1000 2000 3000 Frequency (MHz) 4000 5000 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 3.0V. Application Note AN207, Rev. 1.0 20 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 3.0V Input 3rd order Intercept point at 3V 10 5 0 -5 3V 6mA 3V 10mA 3V 20mA -10 0 Figure 19 1000 2000 3000 Frequency (MHz) 4000 5000 rd Input 3 intercept point of the BGB741L7ESD for 300MHz to 5GHz applications at 3.0V. Stability K Factor at 3V 5 4 3 2 1 3V 6mA 3V 10mA 3V 20mA 0 0 Figure 20 2000 4000 6000 Frequency (MHz) 8000 10000 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 3.0V. Application Note AN207, Rev. 1.0 21 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 4.0V 7 Measured Graphs for 4.0V Insertion Power Gain at 4V 25 4V 6mA 4V 10mA 4V 20mA 20 15 10 0 Figure 21 1000 2000 3000 Frequency (MHz) 4000 5000 Insertion power gain of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. Noise figure at 4V 2 4V 6mA 1.8 4V 10mA 4V 20mA 1.6 1.4 1.2 1 0 Figure 22 1000 2000 3000 Frequency (MHz) 4000 5000 Noise figure of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. Application Note AN207, Rev. 1.0 22 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 4.0V Input Matching at 4V 0 4V 6mA 4V 10mA 4V 20mA 2000 2500 3000 Frequency (MHz) 3500 -5 -10 -15 -20 0 Figure 23 500 1000 1500 4000 4500 5000 Input matching of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. Output Matching at 4V 0 4V 6mA -5 4V 10mA 4V 20mA -10 -15 -20 -25 -30 0 Figure 24 500 1000 1500 2000 2500 3000 Frequency (MHz) 3500 4000 4500 5000 Output matching of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. Application Note AN207, Rev. 1.0 23 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 4.0V Reverse Isolation at 4V 30 25 4V 6mA 20 4V 10mA 4V 20mA 15 0 Figure 25 500 1000 1500 2000 2500 3000 Frequency (MHz) 3500 4000 4500 5000 Reverse isolation of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. Input 1dB compression point at 4V 5 4V 6mA 4V 10mA 4V 20mA 0 -5 -10 -15 -20 0 Figure 26 1000 2000 3000 Frequency (MHz) 4000 5000 Input 1dB compression point of the BGB741L7ESD from 300MHz to 5GHz applications at 4.0V. Application Note AN207, Rev. 1.0 24 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Measured Graphs for 4.0V Input 3rd order Intercept point at 4V 10 5 0 4V 6mA -5 4V 10mA 4V 20mA -10 0 Figure 27 1000 2000 3000 Frequency (MHz) 4000 5000 rd Input 3 intercept point of the BGB741L7ESD from 300MHz to 5GHz applications 4.0V. Stability K Factor at 4V 5 4 3 2 1 4V 6mA 4V 10mA 4V 20mA 0 0 Figure 28 2000 4000 6000 Frequency (MHz) 8000 10000 Stability K-factor of the BGB741L7ESD for 300MHz to 5GHz applications at 4.0V. Application Note AN207, Rev. 1.0 25 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Evaluation Board and layout Information 8 Evaluation Board and layout Information Figure 29 Photo picture of Evaluation Board Figure 30 PCB Layer Information Application Note AN207, Rev. 1.0 26 / 28 2010-06-28 BGB741L7ESD for 300MHz to 5GHz Applications Authors Authors Anthony Thomas, Engineer in Application Engineering of “RF and Protection Devices” Dr. Lin Chih-I, Senior Staff Engineer of Technical Marketing of “RF and Protection Devices” Application Note AN207, Rev. 1.0 27 / 28 2010-06-28 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN207