AN246 BFP750 as a Driver Amplifier for 5.8 GHz Cordless

BF P750
BF P750 a s a Dri ve r A mpl i fi er for 5.8
G Hz Cor dl es s P hon e A ppl i c a t i ons
Appl i c ati o n N ote A N 246
Revision: Rev 1.1
2010-09-24
RF and P r otec ti on D evi c es
Edition 2010-09-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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BFP750
BFP750 5.8 GHz Driver Amplifier
Application Note AN246
Revision History: 2010-09-24
Previous Revision: Rev1.0
Page
Subjects (major changes since last revision)
6
Table 2 updated
Trademarks of Infineon Technologies AG
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ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™,
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SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™,
thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™,
X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™.
Other Trademarks
AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™
is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT
Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.).
EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc.
MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™
of Diodes Zetex Limited.
Last Trademarks Update 2009-10-19
Application Note AN246, Rev1.1
3 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
List of Content, Figures and Tables
Table of Content
1
1.1
1.2
1.3
Introduction ........................................................................................................................................5
Features ...............................................................................................................................................5
Applications ..........................................................................................................................................5
BFP750 in cordless phone applications ...............................................................................................6
2
2.1
Application Information .....................................................................................................................8
Schematic Diagram ..............................................................................................................................8
3
Typical Measurement Results...........................................................................................................9
4
Measured Graphs .............................................................................................................................10
Authors..............................................................................................................................................14
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
BFP750 in SOT343 Package ...............................................................................................................5
Schematic of the cordless phone 5.8GHz application .........................................................................7
Measuremement Setup for the OP1dB of BFP750 for 5.8GHz cordless phone application ...............7
Schematic diagram of the BFP750 driver application circuit for 5.8 GHz ............................................8
Insertion power gain of the BFP750 driver for 5.8GHz cordless phone application ..........................10
Input matching of the BFP750 driver for 5.8GHz cordless phone application ...................................10
Output matching of the BFP750 driver for 5.8GHz cordless phone application ................................11
Reverse isolation of the BFP750 driver for 5.8GHz cordless phone application ...............................11
Stability K-factor of the BFP750 driver for 5.8GHz cordless phone application ................................12
Input 1dB Compression point of the BFP750 driver for 5.8GHz cordless phone application ............12
rd
3 order intercept point of the BFP750 driver for 5.8GHz cordless phone application .....................13
Input and output Z-Parameters of the BFP750 driver for 5.8GHz cordless phone application..........13
List of Tables
Table 1
Table 2
Table 3
Table 4
Pin definition.........................................................................................................................................5
Infineon’s bipolar transistors for different driver applications ...............................................................6
Bill-of-Materials.....................................................................................................................................8
Summary of Measurement results (at room temperature) ...................................................................9
Application Note AN246, Rev1.1
4 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Introduction
1
Introduction
1.1
Features

Highly linear low noise driver amplifier for all RF
frontends up to 5.5 GHz
Based on Infineon´s reliable, high volume
SiGe:C wafer technology
Easy to use Pb-free (RoHS compliant) standard
package with visible leads


Figure 1
1.2
BFP750 in SOT343 Package
Applications
The BFP750 from Infineon Technologies is a SiGe:C Heterojunction bipolar Transistor dedicated for high
linearity applications. Packaged into a SOT343 Package, this transistor is easy-to-use for the designs. The pin
configuration is shown in Table 1.
Table 1
Pin definition
Pin
Pin name
comments
1
B
Base of the BFP750 transistor
2
E
Emitter of the BFP750 transistor
3
C
Collector of the BFP750 transistor
4
E
Emitter of the BFP750 transistor
Additionally Infineon offers a range of other transistors which can be used either as a driver or a second stage
amplifier. The following table (please see Table 2) presents different bipolar transistors and their different
applications in driver configuration.
Application Note AN246, Rev1.1
5 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Introduction
Table 2
Infineon’s bipolar transistors for different driver applications
Application
Frequency / MHz
FM
78 … 110
BFR380F
BFP450
BFP650
BFP750
X
VHF
170 … 470
X
UHF
470 … 880
X
X
ISM
434 / 868
X
X
GSM
900
X
DECT
1900
X
SDARS
2330
X
X
WiMax Low
2300 … 2700
X
X
WiMax Middle
3300 … 3700
X
5.8 GHz Cordless Phone 5800
X
X
Thus, the BFP750 component fits to any applications related to signal reception/transmission like WiMax and
Cordless phones applications. On those conditions of use, the transmission module needs a strong power and
moreover, a high linearity in order to achieve the WiMax and Cordless phones standards requirements.
1.3
BFP750 in cordless phone applications
Since the creation of the Cordless phone in 1966, the communication standards concerning this technology saw
a constant evolution. From the “first” cordless telephone using a signal at 1.7MHz (very sensitive to ambient
noise) until the actual telephone visible on the market, the frequency usage of this technology changed a lot due
to environmental perturbations and technology convenience. We can remark now a lot of standards like PHS
(1.9GHz), DECT (1.9GHz), Wi-fi (2.4GHz) and cordless phone (5.8GHz) invading the domestical telephone
market.
These standards of communication, controlled by telecommunication authorities (for example the IEEE and
FCC), regulate and establish rules of communication between devices. Such rules like protocols or even power
emission and transmission are really essential in order to respect the quality and electromagnetic compatibility
of each device.
For the cordless telephone application, it is therefore important to send a signal with a high linearity, in one
hand, to respect the quality of the signal (voice or data to send) and on the other hand not to perturbate other
surroundings devices.
That is why the signal to send has to include two or three stages of amplification. The schematic of the Figure 2
summarizes the needed elements for a RF Tx/Rx communication for cordless phone applications.
Application Note AN246, Rev1.1
6 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Introduction
Figure 2
Schematic of the cordless phone 5.8GHz application
This documentation presents BFP750’s performance in a driver configuration for 5.8 GHz cordless phone
applications (please refer to the Table 4 for results). The application circuit of the driver BFP750 for Cordless
phone is defined on the Figure 4
The circuit provides a Gain of about 10.5 dB at 5.8 GHz. The output 1dB compression point is located at
14.0 dBm (using a power sweep from -30 dBm to 10 dBm at input). The measurement setups can be found
Figure 3. The measurements are made in reference to input and output of the amplifier (filter and cable losses
substracted).
Figure 3
Measuremement Setup for the OP1dB of BFP750 for 5.8GHz cordless phone application
The input and output are matched to 50 Ω and present an input return loss of about 19.0 dB and an output
return loss of nearly 16.6 dB. the device BFP750 is unconditionally stable from DC to 10 GHz.
Concerning the small signal linearity, the output 3
(using two tones spaced 1 MHz at 5.8 GHz).
Application Note AN246, Rev1.1
rd
order intercept point of the application reaches 28.3 dBm
7 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Application Information
2
Application Information
2.1
Schematic Diagram
Figure 4
Schematic diagram of the BFP750 driver application circuit for 5.8 GHz
Table 3
Bill-of-Materials
Symbol
Value
Unit
Size
Manufacturer
Comment
C1
0.5
pF
0402
Various
Input matching/ DC Block
C2
33
nF
0402
Various
RF signal to ground
C3
33
pF
0402
Various
Negative feedback
C4
33
nF
0402
Various
RF signal to ground
C5
1.8
pF
0402
Various
Output matching
C6
0.5
pF
0402
Various
Output Matching
L1
2.0
nH
0402
Murata LQG series
Output matching/DC Feed
R1
910
Ω
0402
Various
Voltage fixation
R2
1.8
kΩ
0402
Various
Negative feedback resistance
R3
1.8
kΩ
0402
Various
Base current setting
R4
0
Ω
0402
Various
Jumper
R5
0
Ω
0402
Various
Jumper
R6
5.6
Ω
0402
Various
Stabilization/Matching
Q1
BFP750
Application Note AN246, Rev1.1
SOT343
Infineon Technologies SiGe C: bipolar transistor
8 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Typical Measurement Results
3
Typical Measurement Results
Table 4
Summary of Measurement results (at room temperature)
Vcc=2.8V, Ic=51mA, freq=5800MHz
Parameter
Symbol
Value
Unit
Frequency Range
Freq
5800
MHz
DC Voltage
Vcc
2.8
V
DC Current
Icc
51
mA
Gain
G
10.6
dB
Input P1dB
IP1dB
5.5
dBm
Output P1dB
OP1dB
14.0
dBm
Input Return Loss
RLin
19.2
dB
Output Return Loss
RLout
16.6
dB
Reverse Isolation
IRev
15.8
dB
Input IP3
IIP3
17.7
dBm
Output IP3
OIP3
28.3
dBm
Noise Figure
NF
2.2
dB
Comment/Test Condition
Input Power sweep from Pin=-30…10dBm
Input Power Pin=-30dBm
Pin=-20dBm, f1=5800MHz, f2=5801MHz
Unconditionnally stable from 0 to 10GHz
->1
Note: the measurements showed in Table 4 are excluding the PCB and SMA losses of 0.3dB.
Stability
Application Note AN246, Rev1.1
k
9 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Measured Graphs
4
Measured Graphs
Insertion Power Gain InBand
15
5800 MHz
10.59 dB
10
5
0
0
Figure 5
1000
2000
3000
4000 5000 6000
Frequency (MHz)
7000
8000
9000 10000
Insertion power gain of the BFP750 driver for 5.8GHz cordless phone application
Input Matching
0
-10
-20
5800 MHz
-19.16 dB
-30
-40
0
Figure 6
1000
2000
3000
4000 5000 6000
Frequency (MHz)
7000
8000
9000 10000
Input matching of the BFP750 driver for 5.8GHz cordless phone application
Application Note AN246, Rev1.1
10 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Measured Graphs
Output Matching
0
5800 MHz
-16.62 dB
-10
-20
-30
0
Figure 7
1000
2000
3000
4000 5000 6000
Frequency (MHz)
7000
8000
9000 10000
Output matching of the BFP750 driver for 5.8GHz cordless phone application
Reverse Isolation
25
20
15
5800 MHz
15.76 dB
10
5
0
0
Figure 8
1000
2000
3000
4000 5000 6000
Frequency (MHz)
7000
8000
9000 10000
Reverse isolation of the BFP750 driver for 5.8GHz cordless phone application
Application Note AN246, Rev1.1
11 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Measured Graphs
Stability K Factor
5
4
3
2
4118.4 MHz
1.181
1
0
0
Figure 9
2000
4000
6000
Frequency (MHz)
8000
10000
Stability K-factor of the BFP750 driver for 5.8GHz cordless phone application
Mu2 factor
Stability Mu factor
2
Mu1 factor
1.5
1
0.5
0
0
Figure 10
2000
4000
6000
Frequency (MHz)
8000
10000
Input 1dB Compression point of the BFP750 driver for 5.8GHz cordless phone application
Application Note AN246, Rev1.1
12 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Measured Graphs
Figure 11
rd
3 order intercept point of the BFP750 driver for 5.8GHz cordless phone application
Swp Max
6000MHz
2.
0
0.
6
0.8
Z11
1.0
Z Parameters Input output matching
Z22
0.
0
3.
4
4.
5.0
5.0
10.0
1 0.0
4.0
3.0
5800 MHz
r 1.0111
x -0.222604
2.0
1.0
0.8
0.6
5800 MHz
r 0.772859
x -0.131191
0.4
0.2
0.2
0
0
-10. 0
2
-0.
-4
.0
-5.
0
-3
.0
.0
-2
.4
Figure 12
-1.0
-0.8
-0
.6
-0
Swp Min
5000MHz
Input and output Z-Parameters of the BFP750 driver for 5.8GHz cordless phone application
Application Note AN246, Rev1.1
13 / 15
2010-09-24
BFP750
BFP750 5.8 GHz Driver Amplifier
Authors
Authors
Anthony Thomas, RF Engineer of Business Unit “RF and Protection Devices”
Dietmar Stolz, Staff engineer of Business Unit “RF and Protection Devices”
Application Note AN246, Rev1.1
14 / 15
2010-09-24
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