AN218 - BFP640ESD

BFP640ESD
Ultra Low Noise Amplifier for
2.5 - 2.7 GHz WLAN & WiMAX
A pplications
A pplication Note AN218
Revision: Rev. 1.0
2010-06-30
RF and Protection Devices
Edition 2010-06-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
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BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Application Note AN218
Revision History: 2010-06-30
Previous Revision: No Previous Revision
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Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
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Other Trademarks
AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™
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COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc.
MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™
of Diodes Zetex Limited.
Last Trademarks Update 2009-10-19
Application Note AN218, Rev. 1.0
3 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
List of Content, Figures and Tables
Table of Content
1
Introduction ........................................................................................................................................5
2
Application Information.....................................................................................................................6
3
Typical Measurement Results...........................................................................................................8
4
Measured Graphs...............................................................................................................................9
5
Evaluation Board Information.........................................................................................................18
6
ESD Protection .................................................................................................................................19
Authors
20
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Application Diagram .............................................................................................................................5
Schematics of the application circuit ....................................................................................................6
Power Gain of the BFP640ESD for 2.5GHz WLAN & WiMAX Application..........................................9
Noise Figure of the BFP640ESD for 2.5GHz WLAN & WiMAX Application ......................................10
Input Matching of the BFP640ESD for 2.5GHz WLAN & WiMAX Application ...................................11
Output Matching of the BFP640ESD for 2.5GHz WLAN & WiMAX Application ................................12
Compression Point at 1dB of the BFP640ESD for 2.5GHz WLAN & WiMAX Application.................13
Reverse Isolation of the BFP640ESD for 2.5GHz WLAN & WiMAX Application...............................14
K Factor Stability of the BFP640ESD for 2.5GHz WLAN & WiMAX Application ...............................15
3rd Order Intercept Point of the BFP640ESD for 2.5GHz WLAN & WiMAX Application ....................16
Input and Output Matching Z-Parameter of the BFP640ESD for 2.5GHz WLAN & WiMAX
Application..........................................................................................................................................17
Photo Picture of Evaluation Board .....................................................................................................18
PCB Layer Information.......................................................................................................................18
List of Tables
Table 1
Table 2
Table 3
Bill-of-Materials.....................................................................................................................................7
Electrical Characteristics (T = 25 °C) ...................................................................................................8
Noise Figure .......................................................................................................................................10
Application Note AN218, Rev. 1.0
4 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
TIntroduction
1 Introduction
The BFP640ESD is an outstanding performance bipolar transistor intented to a wide range of
wireless applications. It is based upon Infineon Technologies’ B7HF 70 GHz fT SiliconGermanium (Si:Ge) technology, allowing a cost-effective solution with excellent performance
at low current consumption.
1.1
Applications
The actual application note presents the performance of BFP640ESD protected by an ESD
protection diode circuit (maximum peak voltage of 3kV). Using BFP640ESD on electronic
applications offers the security to protect the devices by Electro Static Discharge. Therefore,
the BFP640ESD avoids adding additional part in order to protect the system of ESD.
The BFP640ESD is presented here using external parts for WLAN & WiMAX configuration.
(please refer to Figure 1).
Rx
Diplexer
DPDT
Balun
WLAN / WiMAX
Transceiver
& Baseband
BFP640ESD
Antenna
diversity
Tx
Diplexer
Figure 1
LNA
PA
Balun
Application Diagram
Application Note AN218, Rev. 1.0
5 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Application Information
2 Application Information
2.1
Schematics of the BFP640ESD for 2.5 – 2.7 GHz WLAN & WiMAX
Figure 2 shows the schematics of the optimized circuit working at 3.0V and 7.3mA. The two
microstrip lines of 0.9mm length each are designed for the FR4 PCB board with the RF
ground metal layer of 250µm beneath the top metal layer of the mircostrip lines. In order to
avoid unexpected feedback amoung the input, output, Vcc line and emitter grounding,
the grounding positions of C3/C4, C5/C6 and the microstrips M1 must be well
separated.
Figure 2
Schematics of the application circuit
Application Note AN218, Rev. 1.0
6 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Application Information
Table 1 shows the bill of materials used in this circuit.
Table 1
Bill-of-Materials
Symbol
Value
Unit
Size
Manufacturer
Comment
C1
8.2
pF
0402
Various
DC blocking, input
C2
1.5
pF
0402
Various
DC block, output. Also influences output
and input impedance match.
C3
0.1
μF
0402
Various
Decoupling, low frequency. Also
improves Third-Order Intercept.
C4
8.2
pF
0402
Various
Decoupling (RF short)
Decoupling (RF short). Also has some
influence on stability (using less than
8.2 pF causes output of amplifier to
“see” more loss from R1 at lower
frequencies → stability improvement).
C5
4.7
pF
0402
Various
C6
0.1
μF
0402
L1
3.3
nH
0402
L2
2.7
nH
0402
R1
10
Ω
0402
Various
Murata wirewound
LQW15A series
Murata wirewound
LQW15A series
Various
R2
51
kΩ
0402
Various
Bring bias current / voltage into base of
transistor
Various
Provides some negative feedback for
DC bias / DC operating point to
compensate for variations in transistor
DC current gain, temperature variations,
etc.
R3
68
M1
Width=0.2mm
Length=0.9mm
Q1
BFP640ESD
Ω
Application Note AN218, Rev. 1.0
0402
Decoupling, low frequency
RF choke + impedance match at input
RF choke + impedance match at output
Stability improvement
2x Inductive emitter degeneration.
Stability, RF matching and IP3
improvement
SOT343
Infineon Technologies
7 / 21
BFP640ESD ESD-Hardened SiGe Ultra
Low Noise RF Transistor
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Typical Measurement Results
3 Typical Measurement Results
Table 2 shows the measurement results of the BFP640ESD. The BFP640ESD solution
provides a Gain of 16.5dB for a noise figure of 0.83dB (including SMA and PCB lossed of
0.1dB). And the input/output matching reaches a minimum value of 12.9dB (please see Table
2).
At the frequency of 2500MHz, using two tones separated of 1MHz, the input third-order
intercept point reaches +9.3 dBm. Besides we obtain an input 1dB-compression point of 11.6 dBm.
Table 2
Electrical Characteristics (T = 25 °C)
Network analyzer source power = -25 dBm
Parameter
Symbol
Value
Unit
Frequency Range
Freq
2.5
GHz
DC Voltage
Vcc
3.0
V
DC Current
Icc
7.3
mA
Gain
G
16.5
dB
Noise Figure
NF
0.83
dB
Input Return Loss
RLin
-12.9
dB
Output Return Loss
RLout
-18.1
dB
Reverse Isolation
IRev
-22.2
dB
Input P1dB
IP1dB
-11.6
dBm
Output P1dB
OP1dB
+3.9
dBm
Input IP3
IIP3
+9.3
dBm
Output IP3
OIP3
+25.8
dBm
Stability
k
>1
--
Application Note AN218, Rev. 1.0
8 / 21
Comment/Test Condition
WLAN & WiMAX
Including SMA connectors and PCB losses of
0.1dB
f1 = 2500 MHz, f2 = 2501 MHz,
-25 dBm each tone.
Stability measured from 10 MHz to 6 GHz
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
4 Measured Graphs
Insertion Power Gain Inband
30
2700 MHz
15.7 dB
2297 MHz
16.5 dB
20
10
2500 MHz
16.5 dB
0
-10
-20
-30
-40
-50
-60
-70
0
Figure 3
1000
2000
3000
Frequency (MHz)
4000
5000
6000
Power Gain of the BFP640ESD for 2.5GHz WLAN & WiMAX Application
Application Note AN218, Rev. 1.0
9 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
Figure 4
Table 3
Noise Figure of the BFP640ESD for 2.5GHz WLAN & WiMAX Application
Noise Figure
Frequency
2300 MHz
2350 MHz
2400 MHz
2450 MHz
2500 MHz
2550 MHz
2600 MHz
2650 MHz
2700 MHz
Application Note AN218, Rev. 1.0
Noise Figure
0.92 dB
0.85 dB
0.85 dB
0.82 dB
0.83 dB
0.90 dB
0.87 dB
0.89 dB
0.92 dB
10 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
Input Matching
20
10
2500 MHz
-12.9 dB
0
-10
-20
2304 MHz
-13.2 dB
-30
2700 MHz
-13.7 dB
-40
-50
-60
-70
-80
0
Figure 5
1000
2000
3000
Frequency (MHz)
4000
5000
6000
Input Matching of the BFP640ESD for 2.5GHz WLAN & WiMAX Application
Application Note AN218, Rev. 1.0
11 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
Output Matching
20
10
2500 MHz
-18.1 dB
0
-10
-20
2302 MHz
-17.4 dB
-30
2700 MHz
-11.1 dB
-40
-50
-60
-70
-80
0
Figure 6
1000
2000
3000
Frequency (MHz)
4000
5000
6000
Output Matching of the BFP640ESD for 2.5GHz WLAN & WiMAX Application
Application Note AN218, Rev. 1.0
12 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
Power Sweep at 2500 MHz (CW)
Source Power (Input) Swept from -30 to -5 dBm
Input P1dB = - 11.62 dBm
Figure 7
Compression Point at 1dB of the BFP640ESD for 2.5GHz WLAN & WiMAX Application
Application Note AN218, Rev. 1.0
13 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
Reverse Isolation
20
10
0
-10
2496 MHz
-22.2 dB
-20
-30
-40
-50
-60
-70
-80
0
Figure 8
1000
2000
3000
Frequency (MHz)
4000
5000
6000
Reverse Isolation of the BFP640ESD for 2.5GHz WLAN & WiMAX Application
Application Note AN218, Rev. 1.0
14 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
Stability Factor K
Stability Factor K is defined as follows:
K =
1 - |S11|2 - |S22|2 + |D|2
2|S12S21|
|D| = |S11S22 - S12S21|
The necessary and sufficient condition for Unconditional Stability is K > 1.0. In the plot, K > 1.0 over
10 MHz – 6 GHz ; amplifier is unconditionally stable over 10 MHz – 6 GHz frequency range.
Stablity K
5
4
3
6000 MHz
1.042
2
1
0
0
Figure 9
1000
2000
3000
Frequency (MHz)
4000
5000
6000
K Factor Stability of the BFP640ESD for 2.5GHz WLAN & WiMAX Application
Application Note AN218, Rev. 1.0
15 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
Two-Tone Test, 2500 MHz
Input Stimulus for Amplifier Two-Tone Test.
f1 = 2500 MHz, f2 = 2501 MHz, -25 dBm each tone.
Input IP3 = -25 + (68.73 / 2) = + 9.36 dBm
Output IP3 = +9.36 + 16.5 = + 25.86 dBm
Figure 10
3rd Order Intercept Point of the BFP640ESD for 2.5GHz WLAN & WiMAX Application
Application Note AN218, Rev. 1.0
16 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Measured Graphs
Reference Plane = Input and Output SMA Connector on PC Board
Z PArameter Input Output Matching
2.
0
6
0.
0. 8
1.0
Swp Max
2700MHz
0
3.
2500 MHz
r 35.9602 Ohm
x 13.7614 Ohm
0
4.
5. 0
0.
4
10dB Return Loss Circle
0. 2
10 .0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
S(1,1)
S(2,2)
-1 0. 0
Figure 11
.0
-2
-1.0
-0 .8
-0
.6
.4
-0
-3
.0
2500 MHz
r 38.9306 Ohm
x -0.638895 Ohm
-4
.0
-5 .
0
2
-0 .
Swp Min
2300MHz
Input and Output Matching Z-Parameter of the BFP640ESD for 2.5GHz WLAN & WiMAX
Application
Application Note AN218, Rev. 1.0
17 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Evaluation Board Information
5 Evaluation Board Information
Figure 12
Photo Picture of Evaluation Board
Figure 13
PCB Layer Information
Application Note AN218, Rev. 1.0
18 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
ESD Protection
6 ESD Protection
Electrostatic discharge (ESD) plays an important role when ESD sensitive devices are
connected to exposed interfaces or antennas that can be touched by humans. This is usually
applicable to low noise amplifiers (LNAs) and therefore LNAs must be properly protected
against ESD in order to avoid irreversible damage of the LNA.
For mobile applications low voltage supply and low current consumption is a major issue that
requires new technologies with smaller transistor structures. However, the smaller the
transistor structure the more sensitive the transistor is to ESD events. Therefore, RF-LNAs
based on new front-end technologies have already ESD protection elements integrated onchip, e.g. BFP740FESD, BFP640FESD, BFP540FESD. These on-chip ESD protection
techniques are always a compromise between good ESD protection and RF performance.
Integrated RF ESD concepts hardly ever achieve an ESD protection above 2 kV according
HBM. An on-chip ESD protection of ±1 kV HBM (component level ESD test JEDEC JESD 22A115) is quite sufficient to protect the chip from ESD events in the manufacturing
environment where stringent measures are taken to prevent electrostatic buildup. However in
the field, exposed antennas, for example, always require higher ESD protection levels of at
least ±8kV up to ±15kV. Additional the more stringent system level test according to
IEC61000-4-2 is applied. Therefore an special ESD protection becomes mandatory to handle
the majority of the ESD current. An ESD protection based on silicon TVS diodes fits perfect
to keep the residual ESD stress for the subsequent device as small as possible.
For high frequency applications (2.4GHz and 5GHz WLAN) ESD protection diodes with ultra
low line capacitances are required. Infineon offers ultra low clamping voltage and ultra low
capacitance, 0.2pF line capacitance, ESD protection diodes in leadless packages of EIA
case 0402 (TSLP-2-17) as well as 0201 (TSSLP-2-1):
ESD0P2RF-02LRH / -02LS
The Infineon TVS diode ESD0P2RF has a line capacitance of only 0.2 pF and comes in
either a TSLP-2-17 package (1 mm x 0.6 mm x 0.39 mm) or a super small TSSLP-2-1
package (0.62 mm x 0.32 mm x 0.31 mm).
The ESD0P2 ESD diode is a bidirectional TVS diode with a maximum working voltage of
±5.3V. It is capable of handling TX power levels of up to +20dBm without influencing the
signal integrity, EVM and harmonic generation. Therefore it is well suited for WLAN 2.4GHz
and for a lot of 5GHz applications as well.
Application Note AN218, Rev. 1.0
19 / 21
2010-06-30
BFP640ESD
LNA for 2.5 - 2.7 GHz WLAN & WiMAX
Authors
Authors
Song Kyung-Min, Senior Application Engineer of Business Unit “RF and Protection Devices”
Lee Seok-Soo, Staff Engineer of Business Unit “RF and Protection Devices”
Application Note AN218, Rev. 1.0
20 / 21
2010-06-30
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
AN218