B GS 12S L 6 Per for man ce of S PD T R F Swi t c h Mid P ow e r A pplic a ti ons Applic atio n N ote A N 300 Revision: Rev. 1.1 2013-06-20 RF and P r otecti on D evic es Edition 2013-06-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. 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BGS12SL6 Mid Power Applications Application Note AN300 Revision History: 2013-06-20 Previous Revision: prev. Rev. 1.0 Page Subjects (major changes since last revision) Updated text Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN300, Rev. 1.1 3 / 23 2013-06-20 BGS12SL6 Mid Power Applications List of Content, Figures and Tables Table of Content 1 Introduction ........................................................................................................................................ 6 2 2.1 2.2 2.3 2.4 BGS12SL6 Features ........................................................................................................................... 6 Main Features ...................................................................................................................................... 6 Functional Diagram .............................................................................................................................. 7 Pin Configuration .................................................................................................................................. 7 Pin Description ..................................................................................................................................... 7 3 3.1 3.2 Application .......................................................................................................................................... 8 Band Selection with RF CMOS Switch in Single-Ended Configuration ............................................... 8 Application Board ................................................................................................................................. 9 4 4.1 4.2 4.3 4.4 4.5 Small Signal Characteristics ........................................................................................................... 10 Measurement Results ........................................................................................................................ 10 Forward Transmission ........................................................................................................................ 11 Reflction RFin Port ............................................................................................................................. 11 Isolation RF1 ...................................................................................................................................... 12 Isolation RF2 ...................................................................................................................................... 12 5 Intermodulation ................................................................................................................................ 13 6 Harmonic Generation ....................................................................................................................... 15 7 Power Compression Measurements on all RF Paths ................................................................... 18 8 8.1 8.2 8.3 Switching time .................................................................................................................................. 19 Measurement Specifications .............................................................................................................. 19 Measurement Setup ........................................................................................................................... 20 Measurement results .......................................................................................................................... 21 9 Authors .............................................................................................................................................. 22 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 BGS12SL6 Functional Diagram ........................................................................................................... 7 Pin configuration................................................................................................................................... 7 PCS/IMT band switching ...................................................................................................................... 8 LTE Band -1/Band -4 switching............................................................................................................ 8 Layout of the application board ............................................................................................................ 9 Layout of de-embedding boards .......................................................................................................... 9 PCB layer information .......................................................................................................................... 9 Forward Transmission Curves for RF Ports ....................................................................................... 11 Reflction RFin Port ............................................................................................................................. 11 Isolation RF1 ...................................................................................................................................... 12 Isolation RF2 ...................................................................................................................................... 12 Block diagram of RF Switch intermodulation ..................................................................................... 13 Test set-up for IMD Measurements.................................................................................................... 14 IMD2 and IMD3 results for Band I ...................................................................................................... 14 IMD Results for Band V ...................................................................................................................... 14 Set-up for harmonics measurement ................................................................................................... 15 nd 2 harmonic at fc=830 MHz ............................................................................................................... 16 rd 3 harmonic at fc=830 MHz ................................................................................................................ 16 nd 2 Harmonic at fc=1800 MHz............................................................................................................. 17 rd 3 Harmonic at fc=1800 MHz ............................................................................................................. 17 Power Compression Measurement Results at fc=830 MHz ............................................................... 18 Switching Time ................................................................................................................................... 19 Rise/Fall Time .................................................................................................................................... 19 Switching Time Measurement Setup ................................................................................................. 20 Screenshots of Switching Time Measurement BGS12SL6 .............................................................. 21 Application Note AN300, Rev. 1.1 4 / 23 2013-06-20 BGS12SL6 Mid Power Applications List of Content, Figures and Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Pin Description (top view) .................................................................................................................... 7 Forward Transmission from RFIN Port to the Respective RF Port with All Other Ports Terminated with 50Ω ............................................................................................................................................. 10 Reflection RFin Port to the Respective RF Port with All Other Ports Terminated with 50Ω ............. 10 Reflection RF Port to the Respective RF Port with All Other Ports Terminated with 50Ω ................ 10 Test conditions and specifications of IMD measurements ................................................................. 13 Switching time measurement results ................................................................................................. 21 Application Note AN300, Rev. 1.1 5 / 23 2013-06-20 BGS12SL6 Mid Power Applications Introduction 1 Introduction The BGS12SL6 RF MOS switch is designed for mid power and pre PA applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 27.5 dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 29 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.35 dB in the 2.5 GHz range. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12SL6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. 2 BGS12SL6 Features 2.1 Main Features 2 high-linearity TRx paths with power handling capability of up to 27.5 dBm High switching speed All ports fully symmetrical No external decoupling components required Low insertion loss Low harmonic generation High port-to-port-isolation 0.1 to 6 GHz coverage High ESD robustness On-chip control logic Very small leadless and halogen free package TSLP-6-4 (0.7x1.1mm ) with super low height of 0.31 mm RoHS compliant package 2 Application Note AN300, Rev. 1.1 6 / 23 2013-06-20 BGS12SL6 Mid Power Applications BGS12SL6 Features 2.2 Functional Diagram Figure 1 BGS12SL6 Functional Diagram 2.3 Pin Configuration In Figure 2 the pin configuration in top view is given. Figure 2 Pin configuration 2.4 Pin Description Table 1 Pin Description (top view) Pin NO Name Pin Type Function 1 RF2 I/O RF port 2 2 GND GND 3 RF1 I/O 4 Vdd PWR 5 RFIN I/O RF port In 6 CTRL I Control Pin Application Note AN300, Rev. 1.1 7 / 23 Ground RF port 1 Supply Voltage 2013-06-20 BGS12SL6 Mid Power Applications Application 3 Application 3.1 Band Selection with RF CMOS Switch in Single-Ended Configuration The number of LTE bands to support in a mobile phone is increasing rapidly worldwide. A simple way to support more bands in a mobile phone is to implement band selection function by adding a RF CMOS switch to existing transceiver/diversity ICs. Following two examples show band selection with the BGS12SL6 switch in singleended configuration. UMTS PCS or IMT GSM900 Rx GSM1800 Rx GSM1900 Rx GSM850/900 Tx PA LPF GSM1800/1900 Tx RF Transceiver IC GSM850 Rx UMTS Cell PCS UMTS SPDT Switch PCS or IMT IMT Figure 3 PCS/IMT band switching Band 4 LNA SPDT Switch Band 1 Figure 4 LTE Transceiver IC LTE Band -1/Band -4 switching Application Note AN300, Rev. 1.1 8 / 23 2013-06-20 BGS12SL6 Mid Power Applications Application 3.2 Application Board Below is a picture of the evaluation board used for the measurements (Figure 5). The board is designed so that all connecting 50 Ohm lines have the same length. In order to get accurate values for the insertion loss of the BGS12PL6 all influences and losses of the evaluation board, lines and connectors have to be eliminated. Therefore a separate de-embedding board, representing the line length is necessary (Figure 6). The calibration of the network analyser (NWA) is done in severall steps: - Perform full calibration on all NWA ports. - Attach empty SMA connector at port 2 and perform “open” port extension. Turn port extensions on. - Connect the “half” de-embedding board (Figure 5 left board) between port1 and port2, store this as a s-parameter (s2p) file. - Turn all port extentions off. - Load the stored s-parameter file as de-embedding file for all used NWA ports - Switch all port extentions on - Check insertion loss with the de-embedding through board (Figure 6 right board) Figure 5 Layout of the application board Figure 6 Layout of de-embedding boards The construction of the PCB is shown in Figure 7. Vias Rodgers , 0.2mm Copper 35µm Figure 7 FR4, 0.8mm PCB layer information Application Note AN300, Rev. 1.1 9 / 23 2013-06-20 BGS12SL6 Mid Power Applications Small Signal Characteristics 4 Small Signal Characteristics The small signal characteristics are measured at 25 °C with a Network analyzer connected to an automatic multiport switch box. 4.1 Measurement Results In the following tables and graphs the most important RF parameter of the BGS12SL6 are shown. The markers are set to the most important frequencies of the WDCDMA system. Table 2 Forward Transmission from RFIN Port to the Respective RF Port with All Other Ports Terminated with 50Ω Frequency (MHz) RF Path RF1 RF2 Table 3 RF Path RF1 RF2 RF1 RF2 1000 1710 1910 2170 2690 -0.38 -0.37 -0.39 -0.38 -0.39 -0.38 -0.46 -0.44 -0.47 -0.46 -0.51 -0.49 -0.58 -0.57 824 915 1000 1710 1910 2170 2690 -29.1 -29.2 -27.8 -28.1 -27.7 -27.9 -25.3 -25.4 -24 -23.9 -22.2 -22 -20 -19.6 Reflection RF Port to the Respective RF Port with All Other Ports Terminated with 50Ω Frequency (MHz) RF Path 915 Reflection RFin Port to the Respective RF Port with All Other Ports Terminated with 50Ω Frequency (MHz) Table 4 824 824 915 1000 1710 1910 2170 2690 -29.8 -30.8 -29.4 -30.2 -29.3 -30.3 -26.2 -26.6 -25.3 -25.4 -23.7 -23.2 -20.2 -19.3 Application Note AN300, Rev. 1.1 10 / 23 2013-06-20 BGS12SL6 Mid Power Applications Small Signal Characteristics 4.2 Forward Transmission Forward Transmission RF Ports 0 -2 [dB] -4 -6 915 MHz 824 MHz -0.2327 dB -0.2367 dB 1710 MHz 1910 MHz -0.2183 dB -0.2182 dB 2170 MHz -0.2287 dB 2690 MHz -0.3013 dB -8 RF1 RF2 -10 0 1000 2000 3000 4000 Frequency (MHz) Figure 8 Forward Transmission Curves for RF Ports 4.3 Reflction RFin Port 5000 6000 Reflection RFin Port 0 -10 -20 [dB] 2690 MHz -20.99 dB -30 -40 RFin_RF1 RFin_RF2 -50 0 2000 4000 6000 Frequency (MHz) Figure 9 Reflction RFin Port Application Note AN300, Rev. 1.1 11 / 23 2013-06-20 BGS12SL6 Mid Power Applications Small Signal Characteristics 4.4 Isolation RF1 Isolation_RF1 0 -20 -40 -60 2690 MHz -26.09 dB -80 RF2_RF1 RF1_RFin -100 0 2000 4000 6000 Frequency (MHz) Figure 10 Isolation RF1 4.5 Isolation RF2 Isolation_RF2 0 -20 -40 -60 2690 MHz -25.99 dB -80 RF1_RF2 RF2_RFin -100 0 2000 4000 6000 Frequency (MHz) Figure 11 Isolation RF2 Application Note AN300, Rev. 1.1 12 / 23 2013-06-20 BGS12SL6 Mid Power Applications Intermodulation 5 Intermodulation Another very important parameter of a RF switch is the large signal capability. One of the possible intermodulation scenarios is shown in Figure 12. The transmission (Tx) signal from the main antenna is coupled into the diversity antenna with with high power.This signal (20 dBm) and a received Jammer signal (-15 dBm) are entering the switch. Coupled Tx Signal from main antenna Jammer (CW) Receiver Diversity Antenna RF Switch IMD Figure 12 Block diagram of RF Switch intermodulation Special combinations of TX and Jammer signal are producing intermodulation products 2 nd and 3rd order, which fall in the RX band and disturb the wanted RX signal. In Table 5 frequencies for 3 bands and the linearity specifications for an undisturbed communication are given. Table 5 Test conditions and specifications of IMD measurements Test Conditions (Tx = +20dBm, Bl = -15dBm,freq.in MHz,@25°C) Band Tx Freq. Rx Freq. IMD2 Low Jammer 1 850 836.5 881.5 45 791.5 1900 1880 1960 80 2100 1950 2140 190 Linearity Specification IMD3 IMD2 High Jammer 2 Jammer 3 IM2 (dBm) IIP2 (dBm) IM3 (dBm) IIP3 (dBm) 1718 -105 110 -105 65 1800 3840 -105 110 -105 65 1760 4090 -105 110 -105 65 The test setup for the IMD measurements has to provide a very high isolation between RX and TX signals. As an example the test set-up and the results for the high band are shown (Figure 13 and Figure 14). For the RX / TX separation a professional duplexer with 80 dB isolation is used. In Figure 14 the results for High band are given. For each distortion scenario there is a min and a max value given. This variation is caused by a phase shifter connected between switch and duplexer. In the test set-up the phase shifter represents a no ideal matching of the switch to 50 Ohm. Application Note AN300, Rev. 1.1 13 / 23 2013-06-20 BGS12SL6 Mid Power Applications Intermodulation Load -20dB -3dB Tx K&L Mini Circuits (ZHL-30W-252 -S+) Signal Generator Power Amplifier Duplexer Tunable Bandpass Filter Circulator DUT ANT Phase Shifter / Delay Line TRx -20dB ANT K&L Tunable Bandpass Filter Signal Generator Rx K& L Signal Analyzer Figure 13 Power reference plane PTx = +20 dBm PBl = -15 dBm -3 dB Tunable Bandpass Filter Test set-up for IMD Measurements IMD Band - I T= 25°C Vdd = 3.5V IMD2 low IMD2 High IMD3 fb = 190 MHz fb = 4090 MHz fb = 1760 MHz Power RF-port Min Max Min Max Min Max P Tx = + 10dBm RF1 -122,34 -113,08 -120,21 -118,33 -127,55 -119,25 P int = - 15dBm RF2 -124,81 -115,11 -116,65 -115,19 -127,71 -120,40 P Tx = + 20dBm RF1 -115,64 -108,17 -113,89 -112,03 -106,90 -102,72 P int = - 15dBm RF2 -119,33 -109,86 -109,13 -107,58 -106,88 -103,30 Figure 14 IMD2 and IMD3 results for Band I IMD Band - V T= 25°C Vdd = 3.5V IMD2 low IMD2 High IMD3 fb = 45 MHz fb = 1718 MHz fb = 791.5 MHz Power RF-port Min Max Min Max Min Max P Tx = + 10dBm RF1 -118,56 -106,83 -122,16 -116,43 -124,66 -119,97 P int = - 15dBm RF2 -120,40 -107,44 -120,72 -115,55 -124,46 -120,70 P Tx = + 20dBm RF1 -110,13 -98,15 -111,39 -107,70 -105,84 -104,74 P int = - 15dBm RF2 -109,42 -98,20 -110,41 -106,68 -105,74 -104,77 Figure 15 IMD Results for Band V Application Note AN300, Rev. 1.1 14 / 23 2013-06-20 BGS12SL6 Mid Power Applications Harmonic Generation 6 Harmonic Generation Harmonic generation is another important parameter for the characterization of a RF switch. RF switches have to deal with high RF levels, up to 33 dBm. With this high RF power at the input of the switch harmonics are generated. These harmonics (2 nd rd and 3 ) can disturb the other reception bands or cause distortion in other RF applications (GPS, WLan) within the mobile phone. Load -20dB Directional Coupler -20dB Signal Generator Power Amplifier Circulator Tunable Bandpass Filter A Power meter Agilent E4419B -3dB B DUT ANT K&L Signal Analyzer Figure 16 -20dB Tunable Bandstop Filter Tx Directional Coupler Set-up for harmonics measurement nd rd The results for the harmonic generation at 830 MHZ are shown in Figure 17 (2 harmonic) and Figure 18 (3 harmonic) for all RF ports. At the x-axis the input power is plotted and at the y- axis the generated harmonics in dBm. Application Note AN300, Rev. 1.1 15 / 23 2013-06-20 BGS12SL6 Mid Power Applications Harmonic Generation H2 LB 0 20 21 22 23 24 25 26 27 28 29 30 -10 -20 H2 (dBm) -30 RF1 -40 RF2 -50 -60 -70 -80 Figure 17 nd 2 Pin (dBm) harmonic at fc=830 MHz H3 LB 0 -10 20 21 22 23 24 25 26 27 28 29 30 -20 H3 (dBm) -30 -40 RF1 -50 RF2 -60 -70 -80 -90 Figure 18 Pin (dBm) rd 3 harmonic at fc=830 MHz Application Note AN300, Rev. 1.1 16 / 23 2013-06-20 BGS12SL6 Mid Power Applications Harmonic Generation H2 HB 0 -10 20 21 22 23 24 25 26 27 28 29 H2 (dBm) -20 -30 -40 Series1 -50 Series2 -60 -70 -80 Figure 19 nd 2 Pin (dBm) Harmonic at fc=1800 MHz H3 HB 0 -10 20 21 22 23 24 25 26 27 28 29 H3 (dBm) -20 -30 -40 Series1 -50 Series2 -60 -70 -80 Figure 20 Pin (dBm) rd 3 Harmonic at fc=1800 MHz Application Note AN300, Rev. 1.1 17 / 23 2013-06-20 BGS12SL6 Mid Power Applications Power Compression Measurements on all RF Paths 7 Power Compression Measurements on all RF Paths To judge the large signal capability the power compression is a usual measurement tool. The output the power is measured while increasing the input power. At a certain point the output power does not follow the input and the switch compresses the RF signal. In the diagram below (Figure 21) the IL is plotted versus the injected input power. The input power can be increased to 30 dBm and there is no compression visible on none of the RF ports. P0.1dB > Spec 1 0,9 0,8 IL (dB) 0,7 0,6 0,5 0,4 P0.1dB > Spec 0,3 0,2 0,1 0 10 12 14 16 18 20 22 24 26 28 30 32 Pin (dBm) Figure 21 Power Compression Measurement Results at fc=830 MHz The measurements are done on Large Signal measurement setup which is not calibrated for Insertion Loss with high precision. So the values here may differ with the actual IL values earlier in this report. Application Note AN300, Rev. 1.1 18 / 23 2013-06-20 BGS12SL6 Mid Power Applications Switching time 8 Switching time 8.1 Measurement Specifications Switching On Time: 50% Trigger signal to 90 % RF Signal Switching Off Time: 50% Trigger signal to 10% RF Signal VCTRL 2 VCTRL tON 90% RF signal RF signal tOFF Figure 22 10% RF signal Switching Time Rise time: 10% to 90% RF Signal Fall time: 90% to 10% RF Signal 90% RF signal RF signal tOFF tON Figure 23 10% RF signal Rise/Fall Time Application Note AN300, Rev. 1.1 19 / 23 2013-06-20 BGS12SL6 Mid Power Applications Switching time 8.2 Measurement Setup Figure 24 Switching Time Measurement Setup Application Note AN300, Rev. 1.1 20 / 23 2013-06-20 BGS12SL6 Mid Power Applications Switching time 8.3 Measurement results The switching Time measurement setup consist of one pulse generator which generates a sqare wave with 50% duty cycle and an amplitude of 1.8 Volts, an oscilloscope which can detect the 1 GHz signal and the 1 kHz signal and one Signal generator which is set to an output signal of 1GHz with a power level 10 dBm. If the oscilloscope cannot detect the 1 GHz signal of the RF path, due to small bandwith, it is possible to use a crystal oscillator in front of the oscilloscope (such a device detects any RF signal present at input and commutates that) so that the RF signal can be detected. Figure 25 Table 6 Screenshots of Switching Time Measurement BGS12SL6 Switching time measurement results BGS12SL6 Application Note AN300, Rev. 1.1 RF rise time (ns) Switching time (ns) 35 125 21 / 23 2013-06-20 BGS12SL6 Mid Power Applications Authors 9 Authors Ralph Kuhn, Senior Staff Application Engineer of the Business Unit “RF and Protection Devices” Andre Dewai, Application Engineer of the Business Unit “RF and Protection Devices” Application Note AN300, Rev. 1.1 22 / 23 2013-06-20