BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP60 - BSP62 (PNP) 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BSP50 BSP50 1=B 2=C 3=E 4=C - - SOT223 BSP51 BSP51 1=B 2=C 3=E 4=C - - SOT223 BSP52 BSP52 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BSP50 45 BSP51 60 BSP52 80 Collector-base voltage Unit VCBO BSP50 60 BSP51 80 BSP52 90 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp ≤ 10 ms ICM 2 Base current IB 100 mA Total power dissipation- Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg A TS ≤ 124 °C 1 -65 ... 150 2011-10-05 BSP50-BSP52 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit ≤ 17 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BSP50 45 - - IC = 10 mA, IB = 0 , BSP51 60 - - IC = 10 mA, IB = 0 , BSP52 80 - - IC = 100 µA, IE = 0 , BSP50 60 - - IC = 100 µA, IE = 0 , BSP51 80 - - IC = 100 µA, IE = 0 , BSP52 90 - - V(BR)EBO 5 - - ICES - - 10 µA IEBO - - 10 µA Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = VCE0max, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) - hFE IC = 150 mA, VCE = 10 V 1000 - - IC = 500 mA, VCE = 10 V 2000 - - Collector-emitter saturation voltage2) V VCEsat IC = 500 mA, IB = 0.5 mA - - 1.3 IC = 1 A, IB = 1 mA - - 1.8 IC = 500 mA, IB = 0.5 mA - - 1.9 IC = 1 mA, IB = 1 A - - 2.2 Base emitter saturation voltage2) VBEsat 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 2011-10-05 BSP50-BSP52 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 200 - MHz t(on) - 400 - ns t(off) - 1500 - AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz Tum-on time IC = 500 mA, IB1 = IB2 = 0.5 mA Tum-off time IC = 500 mA, IB1 = IB2 = 0.5 mA 3 2011-10-05 BSP50-BSP52 Switching time test circuit Switching time waveform 4 2011-10-05 BSP50-BSP52 DC current gain hFE = ƒ(IC) VCE = 10 V 10 5 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat ), IB = Parameter BSP 50...52 EHP00661 10 3 5 ΙC BSP 50...52 EHP00663 mA 5 Ι B = 0.5 mA 10 4 4 mA 5 10 2 5 10 3 5 10 2 10 1 10 2 10 3 10 1 mA 10 4 0 V 1 ΙC V CE sat Transition frequency fT = ƒ(IC) VCE = 5 V, f = 100 MHz Base-emitter saturation voltage IC = ƒ(VBEsat), IB = Parameter 10 3 ΙC BSP 50...52 2 10 3 EHP00664 BSP 50...52 EHP00662 MHz mA fT 5 Ι B = 0.5 mA 4 mA 10 2 10 2 5 5 10 1 0 1 2 V 10 1 10 1 3 5 10 2 mA 10 3 ΙC V BE sat 5 2011-10-05 BSP50-BSP52 Collector-base capacitance Ccb = ƒ(VCB) Total power dissipation P tot = ƒ(TS) Emitter-base capacitance Ceb = ƒ(VEB) 1650 28 pF CEB 1350 22 1200 20 Ptot CCB(CEB ) 24 mW 18 16 1050 900 14 750 12 10 600 8 450 6 300 4 150 CCB 2 0 0 4 8 12 16 V 0 0 22 15 30 45 60 75 90 105 120 VCB(VEB Permissible Pulse Load External resistance RBE = ƒ (TA)** Ptotmax/PtotDC = ƒ(tp ) VCB = VCEmax °C 150 TS ** RBEmax for thermal stability 10 3 BSP 50...52 Ptot max 5 Ptot DC EHP00943 D= tp T tp 10 7 R BE BSP 50...52 EHP00660 Ω 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 6 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 10 5 10 -1 s 10 0 tp 0 50 100 ˚C 150 TA 6 2011-10-05 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BSP50-BSP52 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 7 2011-10-05 BSP50-BSP52 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2011-10-05