BSP50-BSP52

BSP50-BSP52
NPN Silicon Darlington Transistors
• High collector current
4
• Low collector-emitter saturation voltage
3
2
• Complementary types: BSP60 - BSP62 (PNP)
1
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BSP50
BSP50
1=B
2=C
3=E
4=C
-
-
SOT223
BSP51
BSP51
1=B
2=C
3=E
4=C
-
-
SOT223
BSP52
BSP52
1=B
2=C
3=E
4=C
-
-
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BSP50
45
BSP51
60
BSP52
80
Collector-base voltage
Unit
VCBO
BSP50
60
BSP51
80
BSP52
90
Emitter-base voltage
VEBO
5
Collector current
IC
1
Peak collector current, tp ≤ 10 ms
ICM
2
Base current
IB
100
mA
Total power dissipation-
Ptot
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
A
TS ≤ 124 °C
1
-65 ... 150
2011-10-05
BSP50-BSP52
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
≤ 17
K/W
Values
Unit
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V(BR)CEO
IC = 10 mA, IB = 0 , BSP50
45
-
-
IC = 10 mA, IB = 0 , BSP51
60
-
-
IC = 10 mA, IB = 0 , BSP52
80
-
-
IC = 100 µA, IE = 0 , BSP50
60
-
-
IC = 100 µA, IE = 0 , BSP51
80
-
-
IC = 100 µA, IE = 0 , BSP52
90
-
-
V(BR)EBO
5
-
-
ICES
-
-
10
µA
IEBO
-
-
10
µA
Collector-base breakdown voltage
V(BR)CBO
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-emitter cutoff current
VCE = VCE0max, VBE = 0
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain2)
-
hFE
IC = 150 mA, VCE = 10 V
1000
-
-
IC = 500 mA, VCE = 10 V
2000
-
-
Collector-emitter saturation voltage2)
V
VCEsat
IC = 500 mA, IB = 0.5 mA
-
-
1.3
IC = 1 A, IB = 1 mA
-
-
1.8
IC = 500 mA, IB = 0.5 mA
-
-
1.9
IC = 1 mA, IB = 1 A
-
-
2.2
Base emitter saturation voltage2)
VBEsat
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse
test: t < 300µs; D < 2%
2
2011-10-05
BSP50-BSP52
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
200
-
MHz
t(on)
-
400
-
ns
t(off)
-
1500
-
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
Tum-on time
IC = 500 mA, IB1 = IB2 = 0.5 mA
Tum-off time
IC = 500 mA, IB1 = IB2 = 0.5 mA
3
2011-10-05
BSP50-BSP52
Switching time test circuit
Switching time waveform
4
2011-10-05
BSP50-BSP52
DC current gain hFE = ƒ(IC)
VCE = 10 V
10 5
h FE
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), IB = Parameter
BSP 50...52
EHP00661
10 3
5
ΙC
BSP 50...52
EHP00663
mA
5
Ι B = 0.5 mA
10 4
4 mA
5
10 2
5
10 3
5
10 2
10 1
10 2
10 3
10 1
mA 10 4
0
V
1
ΙC
V CE sat
Transition frequency fT = ƒ(IC)
VCE = 5 V, f = 100 MHz
Base-emitter saturation voltage
IC = ƒ(VBEsat), IB = Parameter
10 3
ΙC
BSP 50...52
2
10 3
EHP00664
BSP 50...52
EHP00662
MHz
mA
fT
5
Ι B = 0.5 mA
4 mA
10 2
10 2
5
5
10 1
0
1
2
V
10 1
10 1
3
5
10 2
mA
10 3
ΙC
V BE sat
5
2011-10-05
BSP50-BSP52
Collector-base capacitance Ccb = ƒ(VCB)
Total power dissipation P tot = ƒ(TS)
Emitter-base capacitance Ceb = ƒ(VEB)
1650
28
pF
CEB
1350
22
1200
20
Ptot
CCB(CEB )
24
mW
18
16
1050
900
14
750
12
10
600
8
450
6
300
4
150
CCB
2
0
0
4
8
12
16
V
0
0
22
15
30
45
60
75
90 105 120
VCB(VEB
Permissible Pulse Load
External resistance RBE = ƒ (TA)**
Ptotmax/PtotDC = ƒ(tp )
VCB = VCEmax
°C 150
TS
** RBEmax for thermal stability
10 3
BSP 50...52
Ptot max
5
Ptot DC
EHP00943
D=
tp
T
tp
10 7
R BE
BSP 50...52
EHP00660
Ω
5
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10 6
5
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 5
10 -1 s 10 0
tp
0
50
100
˚C
150
TA
6
2011-10-05
Package SOT223
1.6±0.1
6.5 ±0.2
A
0.1 MAX.
3 ±0.1
7 ±0.3
3
2
0.5 MIN.
1
2.3
0.7 ±0.1
B
15˚ MAX.
4
3.5 ±0.2
Package Outline
BSP50-BSP52
4.6
0.28 ±0.04
0...10˚
0.25 M A
0.25 M B
Foot Print
1.4
4.8
1.4
3.5
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
7.55
12
8
Pin 1
1.75
6.8
7
2011-10-05
BSP50-BSP52
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
8
2011-10-05