PZTA42 NPN Silicon High-Voltage Transistors • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 2 • Complementary type: PZTA92 (PNP) 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type PZTA42 Marking PZTA42 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 Collector current IC 500 Base current IB 100 Total power dissipation- Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg V mA TS ≤ 124 °C -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point 2) RthJS Value Unit ≤ 17 K/W 1Pb-containing 2For package may be available upon special request calculation of R thJA please refer to Application Note Thermal Resistance 1 2007-04-26 PZTA42 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 300 - - V(BR)CBO 300 - - V(BR)EBO 6 - - DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 200 V, IE = 0 - - 0.1 VCB = 200 V, IE = 0 , T A = 150 °C - - 20 - - 100 Emitter-base cutoff current I EBO nA VEB = 5 V, IC = 0 DC current gain1) - h FE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 40 - - VCEsat - - 0.5 VBEsat - - 0.9 fT - 70 - MHz Ccb - - 3 pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency IC = 20 MHz, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2007-04-26 PZTA42 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 h FE Collector current I C = ƒ(V BE) VCE = 10V PZTA 42/43 10 3 EHP00724 PZTA 42/43 EHP00726 mA 5 ΙC 10 2 5 10 2 5 10 1 2 5 10 1 10 0 5 5 10 0 -1 10 5 10 0 5 10 1 2 5 10 mA 10 ΙC Collector cutoff current ICBO = ƒ(TA) VCB = 200 V 10 4 nA PZTA 42/43 10 -1 3 0.5 0 V 1.0 1.5 V BE Transition frequency fT = ƒ(IC) VCE = 10 V EHP00725 10 3 PZTA 42/43 EHP00723 MHz Ι CBO max 10 3 5 fT 10 2 5 10 2 typ 10 1 5 5 10 0 5 10 -1 0 50 10 1 10 0 ˚C 150 100 5 10 1 5 10 2 mA 5 10 3 ΙC TA 3 2007-04-26 PZTA42 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) Total power dissipation Ptot = ƒ(TS) 90 1.8 pF 70 60 P tot CCB(C EB) W 1.2 50 0.9 40 CEB 30 0.6 20 0.3 10 CCB 0 0 4 8 12 16 V 0 0 22 VCB(VEB) 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 PZTA 42/43 Ptot max 5 Ptot DC EHP00320 tp D= T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2007-04-26 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline PZTA42 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 5 2007-04-26 PZTA42 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-26