BCV28, BCV48 PNP Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV29, BCV49 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E SOT89 BCV48 EE 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV28 30 BCV48 60 Collector-base voltage Unit VCBO BCV28 40 BCV48 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1 W 150 °C mA TS ≤ 130 °C Junction temperature Tj Storage temperature Tstg 1Pb-containing -65 ... 150 package may be available upon special request 1 2007-04-20 BCV28, BCV48 Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol RthJS Value ≤ 20 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-20 BCV28, BCV48 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCV28 30 - - IC = 10 mA, IB = 0 , BCV48 60 - - 40 - - 80 - - 10 - - Collector-base breakdown voltage V(BR)CBO IC = 100 µA, IE = 0 , BCV28 IC = 100 µA, IE = 0 , BCV48 Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 30 V, IE = 0 , BCV28 - - 0.1 VCB = 60 V, IE = 0 , BCV48 - - 0.1 VCB = 30 V, IE = 0 , TA ≤ 150 °C, BCV28 - - 10 VCB = 60 V, IE = 0 , TA ≤ 150 °C, BCV48 - - 10 - - 100 Emitter-base cutoff current I EBO nA VEB = 4 V, IC = 0 DC current gain1) - h FE IC = 10 µA, VCE = 1 V, BCV28 4000 - - IC = 10 µA, VCE = 1 V, BCV48 2000 - - IC = 10 mA, VCE = 5 V, BCV28 10000 - - IC = 10 mA, VCE = 5 V, BCV48 4000 - - IC = 100 mA, V CE = 5 V, BCV28 20000 - - IC = 100 mA, V CE = 5 V, BCV48 IC = 0.5 A, VCE = 5 V, BCV28 10000 - - 4000 - - IC = 0.5 A, VCE = 5 V, BCV48 2000 - - Collector-emitter saturation voltage1) VCEsat - - 1 IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage 1) VBEsat - - 1.5 V IC = 100 mA, IB = 0.1 mA 1Pulse test: t < 300µs; D < 2% 3 2007-04-20 BCV28, BCV48 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 200 - MHz Ccb - 4.5 - pF AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 4 2007-04-20 BCV28, BCV48 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 1000 BCV 28/48 EHP00316 10 3 5 ΙC 125 ˚C 10 5 BCV 28/48 EHP00313 mA 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 mA 10 10 0 3 0 0.5 1.0 ΙC Collector cutoff current ICBO = ƒ(TA) VCB = V CEmax IC = ƒ(V BEsat), hFE = 1000 BCV 28/48 EHP00314 Ι C mA 10 4 Ι CBO 150 ˚C 25 ˚C -50 ˚C 10 2 1.5 V CEsat Base-emitter saturation voltage 10 3 V BCV 28/48 EHP00309 nA max 10 3 5 10 2 typ 10 1 10 1 5 10 0 0 1.0 2.0 V 10 0 3.0 0 50 100 ˚C 150 TA V BEsat 5 2007-04-20 BCV28, BCV48 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 BCV 28/48 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00312 16 pF MHz CCB(C EB) fT 12 10 10 2 8 5 6 CEB 4 CCB 2 10 1 10 0 10 1 10 2 mA 0 0 10 3 4 8 12 16 V ΙC 22 VCB(VEB) Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 1200 5 BCV 28/48 Ptot max Ptot DC mW D= tp T tp T 10 2 Ptot EHP00310 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 800 5 600 10 1 400 5 200 0 0 15 30 45 60 75 90 105 120 °C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2007-04-20 Package SOT89 BCV28, BCV48 Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 7 1.6 2007-04-20 BCV28, BCV48 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-20