INFINEON BCW66G

BCW66
NPN Silicon AF Transistors
• For general AF applications
2
3
• High current gain
1
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCW66F
EFs
1=B
2=E
3=C
SOT23
BCW66KF*
EFs
1=B
2=E
3=C
SOT23
BCW66G
EGs
1=B
2=E
3=C
SOT23
BCW66KG*
EGs
1=B
2=E
3=C
SOT23
BCW66H
EHs
1=B
2=E
3=C
SOT23
BCW66KH*
EHs
1=B
2=E
3=C
SOT23
* Shrinked chip version
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
VCEO
45
Collector-base voltage
VCBO
75
Emitter-base voltage
VEBO
5
Collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
800
1
330
TS ≤ 115 °C, BCW66K
500
Tj
Storage temperature
Tstg
1Pb-containing
V
mA
A
mA
mW
TS ≤ 79 °C, BCW66
Junction temperature
Unit
150
°C
-65 ... 150
package may be available upon special request
1
2007-04-20
BCW66
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
Unit
K/W
≤ 215
BCW66
≤ 70
BCW66K
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 45
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
75
-
-
V(BR)EBO
5
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 45 V, IE = 0
-
-
0.02
VCB = 45 V, IE = 0 , TA = 150 °C
-
-
20
-
-
20
Emitter-base cutoff current
I EBO
nA
VEB = 5 V, IC = 0
DC current gain2)
-
h FE
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.F
75
-
-
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.G
110
-
-
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.H
180
-
-
IC = 100 mA, V CE = 1 V, hFE-grp.F
100
160
250
IC = 100 mA, V CE = 1 V, hFE-grp.G
160
250
400
IC = 100 mA, V CE = 1 V, hFE-grp.H
250
350
630
IC = 500 mA, V CE = 1 V, hFE-grp.F, G, H
40
-
-
Collector-emitter saturation voltage2)
V
VCEsat
IC = 100 mA, IB = 10 mA
-
-
0.3
IC = 500 mA, IB = 50 mA
-
-
0.45
IC = 100 mA, IB = 10 mA
-
-
1.25
IC = 500 mA, IB = 50 mA
-
-
1.25
Base emitter saturation voltage2)
1For
VBEsat
calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse
test: t < 300µs; D < 2%
2
2007-04-20
BCW66
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
170
-
AC Characteristics
Transition frequency
fT
MHz
IC = 50 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitance
pF
Ccb
VCB = 10 V, f = 1 MHz, BCW66
-
6
-
VCB = 10 V, f = 1 MHz, BCW66K
-
3
-
VEB = 0.5 V, f = 1 MHz, BCW66
-
60
-
VEB = 0.5 V, f = 1 MHz, BCW66K
-
40
-
Emitter-base capacitance
Ceb
3
2007-04-20
BCW66
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 3
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
BCW 65/66
5
EHP00396
BCW 65/66
10 3
EHP00395
mA
100 ˚C
150 ˚C
25 ˚C
-50 ˚C
ΙC
h FE
10 2
25 ˚C
10 2
-50 ˚C
5
5
10 1
5
10 1
0
10
5
5
10 0
10 -1
5 10 0
5 10 1
5 10 2
10 -1
mA 10 3
0
200
400
600 mV 800
ΙC
VCE sat
Collector cutoff current ICBO = ƒ(TA)
VCB = V CEmax
Base-emitter saturation voltage
IC = ƒ(V BEsat), hFE = 10
10 3
BCW 65/66
EHP00394
10 5
nA
mA
150 ˚C
25 ˚C
-50 ˚C
ΙC
2
10
Ι CB0
BCW 65/66
EHP00393
10 4
5
5
10 3
10
max
5
1
5
10 2
5
typ
0
10
10
5
1
5
10 -1
0
1
2
3
V
10 0
4
0
50
100
˚C
150
TA
VBE sat
4
2007-04-20
BCW66
Transition frequency fT = ƒ(IC)
VCE = 5 V
10 3
BCW 65/66
Collector-base capacitance Ccb = ƒ(V CB)
Emitter-base capacitance Ceb = ƒ(VEB)
BCW66: - - - , BCW66K: ____
EHP00391
75
pF
MHz
fT
5
V CB/V EB
60
CEB: BCW66
CEB: BCW66K
CCB: BCW66
CCB: BCW66K
55
50
45
40
10 2
35
30
5
25
20
15
10
5
10 1
10 0
10 1
10 2
mA
0
0
10 3
2
4
6
8
10
12
14
V
16
ΙC
Total power dissipation Ptot = ƒ(TS)
BCW66: - - - , BCW66K: ____
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
550
mW
BCW 65/66
Ptot max
5
Ptot DC
Ptot
EHP00392
tp
D=
T
450
400
20
CCB/C EB
tp
T
BCW66K
BCW66
10 2
350
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
300
250
200
10 1
150
5
100
50
0
0
15
30
45
60
75
90 105 120
°C
TS
10 0
10 -6
150
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
2007-04-20
Package SOT23
BCW66
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
6
2007-04-20
BCW66
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
7
2007-04-20