BF P740 E SD Low N oise A mpli fier for Wirel e s s LA N 2 .4 G Hz Applic ation Applic atio n N ote A N 295 Revision: Rev. 1.0 2012-11-30 RF and P r otecti on D evic es Edition 2012-11-30 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 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BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Application Note AN295 Revision History: 2012-11-30 Previous Revision: None Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN295, Rev. 1.0 3 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application List of Content, Figures and Tables Table of Content 1 Introduction ........................................................................................................................................ 5 2 Application Circuit ............................................................................................................................. 6 3 Typical Measurement Results ........................................................................................................... 8 4 Measured Graphs ............................................................................................................................... 9 5 Other Miscellaneous Measurements .............................................................................................. 14 6 Evaluation Board .............................................................................................................................. 15 7 Author ................................................................................................................................................ 16 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Block diagram....................................................................................................................................... 5 BFP740ESD Application Circuit ........................................................................................................... 6 Narrowband Isertion gain of BFP740ESD for WLAN 2.4GHz Application ........................................... 9 Wideband power gain of BFP740ESD for WLAN 2.4GHz Application ................................................ 9 Input Matching of BFP740ESD for WLAN 2.4GHz Application ......................................................... 10 Output Matching of BFP740ESD for WLAN 2.4GHz Application ....................................................... 10 Reverse Isolation of BFP740ESD for WLAN 2.4GHz Application ..................................................... 11 Noise Figure of BFP740ESD for WLAN 2.4GHz Application ............................................................. 11 Input 1 dB compression point of BFP740ESD for WLAN 2.4GHz Application .................................. 12 Output Third Order Interpoint (OIP3) of BFP740ESD for WLAN 2.4GHz Application ....................... 12 Input matching of BFP740ESD for WLAN 2.4GHz Application in the Smith Chart ........................... 13 Output matching of BFP740ESD for WLAN 2.4GHz Application in the Smith Chart ......................... 13 Stability factor k of BFP740ESD circuit for up to 10GHz ................................................................... 14 Stability factor µ1 and µ2 of BFP740ESD circuit for up to 10GHz ..................................................... 14 Populated PCB picture of BFP740ESD for WLAN 2.4GHz board (Emitter Degeneration Length 0.4mm) ............................................................................................................................................... 15 PCB layer stack .................................................................................................................................. 15 List of Tables Table 1 Table 2 Table 3 Bill-of-Materials..................................................................................................................................... 6 Package drawing for SOT343 package ............................................................................................... 7 Electrical Characteristics (at room temperature) .................................................................................. 8 Application Note AN295, Rev. 1.0 4 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Introduction 1 Introduction The BFP740ESD is a SiGe:C transistor manufacturered in the highly reliable SiGe:C technology. It offers 2kV Human Body Model ESD robustness due to the integrated protection circuit, and is capable of working under up to 21dBm RF input power. It offers a low noise figure (minimum value [email protected]) and high gain (25.5dB [email protected]) for up to 6GHz. In the 2.4GHz ISM frequency band, the international Wireless LAN standards 802.11 b/g/n is among the major applications. When BFP740ESD is used as low noise amplifier for the 2.4GHz Wireless LAN application, it offers a noise figure of 0.74dB only, and provides a high gain of 18.9dB. Rx Diplexer DPDT Balun WLAN Transceiver & Baseband BFP740ESD Antenna diversity Tx Diplexer Figure 1 LNA PA Balun Block diagram Application Note AN295, Rev. 1.0 5 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Application Circuit 2 Application Circuit 2.1 Schematic Diagram Vcc= 3.0 V J3 DC Connector All passives are “0402“ case size Inductors: LQG Series Capacitors: various I = 11.3 mA R1 120 Ohms R2 22k Ohms C3 39pF L1 2.2nH R3 24 Ohms C4 39pF L2 2.2nH Q1: BFP740ESD J1 RF Port1 INPUT C2 C1 J2 RF Port2 OUTPUT 22pF 8.2pF Figure 2 Table 1 Emitter Degeneration Micro Stripline, 0.4mm length Total Component Count = 9 PCB = M100511 V1.40e PCB Board Material = Standard FR4 Layer spacing (top RF to internal ground plane): 0.2 mm Inductors = 2 (LQG Low-Q series) Resistors = 3 Capacitors = 4 BFP740ESD Application Circuit Bill-of-Materials Symbol Value Unit Package Manufacturer Comment C1 8.2 pF 0402 Various Input matching C2 22 pF 0402 Various Output matching C3 39 pF 0402 Various RF decoupling / blocking capacitor C4 39 pF 0402 Various RF decoupling / blocking capacitor R1 120 Ω 0402 Various DC biasing R2 22 kΩ 0402 Various DC biasing R3 24 Ω 0402 Various DC biasing L1 2.2 nH 0402 Murata LQG15A Input matching L2 2.2 nH 0402 Murata LQG15A Output matching Q1 BFP740ESD SOT343 Infineon Transistor LNA in SOT343 package Application Note AN295, Rev. 1.0 6 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Application Circuit Table 2 Package drawing for SOT343 package Application Note AN295, Rev. 1.0 7 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Typical Measurement Results 3 Typical Measurement Results Table 3 shows typical measurement results of the application circuit shown in Figure 2. The values given in these tables include losses of the board and the SMA connectors if not otherwise stated. Table 3 Electrical Characteristics (at room temperature) Parameter Symbol Value Unit Frequency Range Freq 2440 MHz DC Voltage Vcc 3.0 V DC Current Icc 11.3 mA Gain G 18.9 dB Noise Figure NF 0.74 dB Input Return Loss RLin 10.4 dB Output Return Loss RLout 11.0 dB Reverse Isolation IRev 26.2 dB Input P1dB IP1dB -12.9 dBm Output P1dB OP1dB 5.0 dBm Input IP3 IIP3 -4.9 dBm Ouput IP3 OIP3 + 14.0 dBm Stability K >1 -- Application Note AN295, Rev. 1.0 8 / 17 Comment/Test Condition PCB and SMA connector losses of 0.11 dB subtracted f1 = 2440 MHz, f2 = 2441MHz, Pin = -25 dBm f1 = 2440 MHz, f2 = 2441MHz, Pin = -25 dBm Unconditionally stable from 0 to 10GHz 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Measured Graphs 4 Measured Graphs Insertion Power Gain 25 20 15 2400 MHz 19 dB 2440 MHz 18.9 dB 2500 MHz 18.8 dB 10 5 0 2100 Figure 3 2400 Frequency (MHz) 2700 Narrowband Isertion gain of BFP740ESD for WLAN 2.4GHz Application Insertion Power Gain WideBand 25 20 2440 MHz 18.9 dB 15 10 5 0 100 Figure 4 600 1100 1600 2100 2600 3100 3600 4100 4600 5100 56006000 Frequency (MHz) Wideband power gain of BFP740ESD for WLAN 2.4GHz Application Application Note AN295, Rev. 1.0 9 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Measured Graphs Input Matching 0 -5 2440 MHz -10.3 dB -10 -15 0 2000 4000 6000 Frequency (MHz) Figure 5 Input Matching of BFP740ESD for WLAN 2.4GHz Application Output Matching 0 -5 2440 MHz -11 dB -10 -15 -20 0 2000 4000 6000 Frequency (MHz) Figure 6 Output Matching of BFP740ESD for WLAN 2.4GHz Application Application Note AN295, Rev. 1.0 10 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Measured Graphs Reverse Isolation -20 -25 -30 2440 MHz -26.1 dB -35 -40 -45 -50 0 2000 4000 6000 Frequency (MHz) Figure 7 Reverse Isolation of BFP740ESD for WLAN 2.4GHz Application Noise Figure 1 NF(dB) 0.8 0.6 2440 MHz 0.74 0.4 0.2 0 2300 Figure 8 2350 2400 Frequency (MHz) 2450 2500 Noise Figure of BFP740ESD for WLAN 2.4GHz Application Application Note AN295, Rev. 1.0 11 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Measured Graphs Input 1dB Compression Point at 2440MHz 20 Gain(dB) 15 -20.0 18.6 -12.9 17.6 10 5 0 -20 -15 -10 -5 Pin [dBm] Figure 9 Input 1 dB compression point of BFP740ESD for WLAN 2.4GHz Application Output 3rd Order Intercept Point 2440MHz 0 Power (dBm) -20 2439 MHz -46.4 2440 MHz -6.2 -40 -60 -80 -100 2438.5 Figure 10 2439.5 2440.5 Frequency (MHz) 2441.5 2442.5 Output Third Order Interpoint (OIP3) of BFP740ESD for WLAN 2.4GHz Application Application Note AN295, Rev. 1.0 12 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Measured Graphs Swp Max 2700MHz 2. 0 6 0. 0.8 1.0 Input Matching Smith 0. 4 0 3. 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 2 -0. 4 .0 -5. 0 -3 .0 Figure 11 .0 -2 Swp Min 2100MHz -1.0 -0.8 -0 .6 .4 -0 Input matching of BFP740ESD for WLAN 2.4GHz Application in the Smith Chart Swp Max 2700MHz 2. 0 6 0. 0.8 1.0 Output Matching Smith 0. 4 0 3. 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 2 -0. -4 .0 -5. 0 -3 .0 Figure 12 .0 -2 -1.0 -0.8 -0 .6 .4 -0 Swp Min 2100MHz Output matching of BFP740ESD for WLAN 2.4GHz Application in the Smith Chart Application Note AN295, Rev. 1.0 13 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Other Miscellaneous Measurements 5 Other Miscellaneous Measurements Stability k Factor 2 7134.1 MHz 1.015 1.5 1 0.5 0 10 5010 10010 15000 Frequency (MHz) Figure 13 Stability factor k of BFP740ESD circuit for up to 10GHz Stability Mu Factor 2 47.462 MHz 1.006 1.5 1 7134.1 MHz 1.013 0.5 MU1() MU2() 0 10 Figure 14 2010 4010 6010 Frequency (MHz) 8010 10000 Stability factor µ1 and µ2 of BFP740ESD circuit for up to 10GHz Application Note AN295, Rev. 1.0 14 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Evaluation Board 6 Evaluation Board Figure 15 Populated PCB picture of BFP740ESD for WLAN 2.4GHz board (Emitter Degeneration Length 0.4mm) Vias FR4, 0.2mm Copper 35µm Figure 16 FR4, 0.8mm PCB layer stack Application Note AN295, Rev. 1.0 15 / 17 2012-11-30 BFP740ESD Low Noise Amplifier for Wireless LAN 2.4GHz Application Author 7 Author Xiang Li, Application Engineer of Business Unit “RF and Protection Devices” Dr. Chih-I Lin, Senior Staff Engineer of Business Unit “RF and Protection Devices” Application Note AN295, Rev. 1.0 16 / 17 2012-11-30 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN295