B GA 825L 6S High - Gain Lo w Nois e A m plifie r fo r Glo bal Na vig atio n S atellit e S y s te ms (G N SS ) A pplicati on s fro m 15 50 M Hz t o 1615 MHz Applic atio n N ote A N 297 Revision: Rev. 1.0 2012-09-25 RF and P r otecti on D evic es Edition 2012-09-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Application Note AN297 Revision History: 2012-09-25 Previous Revision: None Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN297, Rev. 1.0 3 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Table of Content, List of Figures and Tables Table of Content 1 SiGe Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) ............................... 6 2 Introduction ........................................................................................................................................ 7 3 Application Circuit ........................................................................................................................... 11 4 Typical Measurement Results ......................................................................................................... 12 5 Measured Graphs for COMPASS/Galileo, GPS and GLONASS bands ....................................... 14 6 Miscellaneous Measured Graphs ................................................................................................... 20 7 Evaluation Board .............................................................................................................................. 23 8 Authors .............................................................................................................................................. 24 Application Note AN297, Rev. 1.0 4 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Table of Content, List of Figures and Tables List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 BGA825L6S in TSLP-6-3 Package (0.90mm x 1.1mm x 0.40mm)...................................................... 6 BGA825L6S TSLP-6-3 package size ................................................................................................... 8 Block diagram of the BGA825L6S for GNSS band 1559-1615MHz applications .............................. 10 BGA825L6S application circuit ........................................................................................................... 11 Power gain of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands ............................ 14 Narrowband power gain of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands ........ 14 Input matching of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands ....................... 15 Output matching of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands .................... 15 Reverse isolation of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands ................... 16 Noise figure of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands ........................... 16 Input 1 dB compression point of BGA825L6S at supply voltage of 1.8V for COMPASS, Galileo, GPS and GLONASS bands ........................................................................................................................ 17 Input 1 dB compression point of BGA825L6S at supply voltage of 2.8V for COMPASS, Galileo, GPS and GLONASS bands ........................................................................................................................ 17 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=1.8V ............................ 18 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=2.8V ............................ 18 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=1.8V .................. 19 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=2.8V .................. 19 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=1.8V ...... 20 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=2.8V ...... 20 Stability factor µ1 of BGA825L6S upto 10GHz .................................................................................. 21 Stability factor µ2 of BGA825L6S upto 10GHz .................................................................................. 21 Stability factor k of BGA825L6S upto 10GHz .................................................................................... 22 Populated PCB picture of BGA825L6S .............................................................................................. 23 PCB layer stack .................................................................................................................................. 23 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Pin Definition ...................................................................................................................................... 10 Switching Mode .................................................................................................................................. 10 Bill-of-Materials................................................................................................................................... 11 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V .............................................. 12 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V .............................................. 13 Application Note AN297, Rev. 1.0 5 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS SiGe Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) 1 SiGe Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) 1.1 Features • High insertion power gain: 17.0 dB • Out-of-band input 3rd-order intercept point: +8 dBm • Input 1dB compression point: -7 dBm • Low noise figure: 0.60 dB • Low current consumption: 4.8 mA • Operating frequency: 1550 - 1615 MHz • Supply voltage: 1.5 V to 3.6 V • Digital on/off switch (1V logic high level) • Small TSLP-6-3 leadless package (footprint: 0.9 x 1.1 mm2) • B7HF Silicon Germanium technology • RF output internally matched to 50 Ω • Only one external SMD component necessary • 2 kV HBM ESD protection (including AI-pin) • Pb-free (RoHS compliant) package Figure 1 BGA825L6S in TSLP-6-3 Package (0.90mm x 1.1mm x 0.40mm) 1.2 Applications - GPS (Global Positioning System) working in the L1 band at 1575.42 MHz - GLONASS (Russian GNSS) working in the L1 band from 1598.06 MHz to 1605.38 MHz - Galileo (European GNSS) working in the E2-L1-E1 band from 1559 MHz to 1592 MHz - COMPASS (Chinese Beidou Navigation System) working in E2 band at 1561.10 MHz and E1 band at 1589.74 MHz Application Note AN297, Rev. 1.0 6 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Introduction 2 Introduction The BGA825L6S is a front-end Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS) application. It is based on Infineon Technologies’ B7HF Silicon-Germanium (SiGe) technology, enabling a cost-effective solution in a ultra small TSLP-6-3 package with ultra low noise figure, high gain, high linearity and low current consumption over a wide range of supply voltages from 3.6 V down to 1.5 V. All these features make BGA825L6S an excellent choice for GNSS LNA as it improves sensitivity, provide greater immunity against out-of-band jammer signals, reduces filtering requirement and hence the overall cost of the GNSS receiver. The GNSS satellites are at an orbit altitude of more than 20,000 km away from earth’s surface and transmit power in the range of +47 dBm. After taking losses (atmospheric, antenna etc.) into account, the received signal strength at the GNSS device input is very low in the range of -130 dBm. The ability of the GNSS device to receive such a low signal strength and provide meaningful information to the end-user depends strongly on the noise figure of the GNSS receive chain. This ability which is called receiver sensitivity can be improved by using a low-noise amplifier with low noise figure and high gain at the input of the receiver chain. The improved sensitivity results in a shorter Time-To-First-Fix (TTFF), which is the time required for a GNSS receiver to acquire satellite signals and navigation data, and calculate a position. Noise figure of the LNA defines the overall noise figure of the GNSS receiver system. This is where BGA825L6S excels by providing noise figure as low as 0.60 dB and high gain of 17.0 dB, thereby improving the receiver sensitivity significantly. The ever growing demand to integrate more and more functionality into one device leads to many challenges when transmitter/receiver has to work simultaneously without degrading the performance of each other. In today’s smart-phones a GNSS receiver simultaneously coexists with transceivers in the GSM/EDGE/UMTS/LTE bands. These 3G/4G transceivers transmit high power in the range of +24 dBm which due to insufficient isolation couple to the GNSS receiver. The cellular signals can mix to produce Intermodulation products exactly in the GNSS receiver frequency band. For example, GSM 1712.7 MHz mixes with UMTS 1850 MHz to produce third-order-product exactly at GPS. To quantify the effect, BGA825L6S Application Note AN297, Rev. 1.0 7 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Introduction shows out-of-band input IP3 at GPS of +10 dBm as a result of frequency mixing between GSM 1712.7 MHz and UMTS 1850 MHz with power levels of -20 dBm. BGA825L6S has a high out-of-band input 3rd order intercept point (IIP3) of +10 dBm, so that it is especially suitable for the GPS function in mobile phones. Figure 2 BGA825L6S TSLP-6-3 package size As the industry inclines toward assembly miniaturization and also surface mount technology matures, there is a desire to have smaller and thinner components. This is especially the case with portable electronics where higher circuit density allows device design flexibility and also optimum use of the limited space available. BGA825L6S has a small package with dimensions of 0.90mm x 1.1mm x 0.40mm and it requires only two components at its input, the capacitor at the input has to be used if a DC block is required and the inductor provides input matching. The DC block at input is optional as it is usually provided by the pre-filter before the LNA in many GPS applications. All the device manufacturers implement very good power supply filtering on their boards so that the RF bypass capacitor mentioned in this Application Note AN297, Rev. 1.0 8 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Introduction application circuit may not be needed in the end. The minimal number of external SMD components reduces the application bill of materials and the PCB area thus making it an ideal solution for compact and cost-effective GNSS LNA. The output of the BGA825L6S is internally matched to 50 Ω, and a DC blocking capacitor is integrated on-chip, thus no external component is required at the output. The device also integrates an on-chip ESD protection which can resist until 2 kV (referenced to Human Body Model). The integrated power on/off feature provides for low power consumption and increased stand-by time for GNSS handsets. Moreover, the low current consumption (5.0 mA) makes the device suitable for portable technology like GNSS receivers and mobiles phones. The Internal circuit diagram of the BGA825L6S is presented in Figure 3. Table 1 show the pin assignment of BGA825L6S. Table 2 shows the truth table to turn on/off BGA825L6S by applying different voltage to the PON pin. Application Note AN297, Rev. 1.0 9 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Introduction Figure 3 Table 1 Pin Block diagram of the BGA825L6S for GNSS band 1559-1615MHz applications Pin Definition Symbol Comment 1 2 GND VCC General ground DC supply 3 AO LNA output 4 GNDRF LNA RF ground 5 AI LNA input 6 PON Power on control Table 2 Switching Mode LNA Mode Symbol ON OFF ON/OFF Control Voltage at PON pin Min Max PON, on 1.0 V VCC PON, off 0V 0.4 V Application Note AN297, Rev. 1.0 10 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Application Circuit 3 Application Circuit 3.1 Schematic Diagram Figure 4 BGA825L6S application circuit Table 3 Symbol Bill-of-Materials Value Unit Package Manufacturer Comment C1 1 nF 0402 Various DC block C2 10 nF 0402 Various RF bypass L1 6.2 nH 0402 Murata LQW series Input matching N1 BGA825L6S TSLP-6-3 Infineon PCB substrate FR4 Application Note AN297, Rev. 1.0 11 / 25 SiGe:C LNA 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Typical Measurement Results 4 Typical Measurement Results Table 4 and Table 5 show typical measurement results of the application circuit shown in Figure 4. The values given in this table include losses of the board and the SMA connectors if not otherwise stated. Table 4 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit DC Voltage Vcc 1.8 V DC Current Icc 5.0 mA Navigation System Sys Frequency Range Freq Gain COMPASS/ Galileo GPS GLONASS 1559-1593 1575.42 1598-1606 MHz G 17.0 16.9 16.7 dB Noise Figure NF 0.61 0.60 0.60 dB Input Return Loss RLin 14.1 14.7 15.6 dB Output Return Loss RLout 20.0 17.7 14.8 dB Reverse Isolation IRev 22.3 22.2 22.2 dB Comment/Test Condition PCB and SMA losses of 0.07dB substracted fgalileo = 1559 MHz Input P1dB IP1dB -8.4 -8.6 -8.5 dBm fgps = 1575.42 MHz f GLONASS = 1605.38 MHz Output P1dB Input IP3 In-band Output IP3 In-band OP1dB 7.6 7.3 7.2 dBm IIP3 3.8 3.9 4.0 dBm f1gal/gps = 1575 MHz f2gal/gps = 1576MHz OIP3 20.8 20.8 20.7 dBm f1GLONASS =1602 MHz f2GLONASS =1603 MHz Input power= -30dBm LTE band-13 nd 2 Harmonic Input IP3 out-of-band Stability H2 – input referred -45.9 IIP3OOB 10.0 k >1 Application Note AN297, Rev. 1.0 12 / 25 fIN = 787.76 MHz dBm PIN = -25 dBm fH2 = 1575.52 MHz dBm -- f1 = 1712.7 MHz f2 = 1850 MHz Input power = -20dBm fIIP3 = 1575.4 MHz Unconditionnally Stable from 0 to 10GHz 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Table 5 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit DC Voltage Vcc 2.8 V DC Current Icc 5.0 mA Navigation System Sys Frequency Range Freq Gain COMPASS/ Galileo GPS GLONASS 1559-1593 1575.42 1598-1606 MHz G 17.2 17.1 16.9 dB Noise Figure NF 0.61 0.61 0.60 dB Input Return Loss RLin 14.6 15.3 16.4 dB Output Return Loss RLout 22.3 19.3 15.8 dB Reverse Isolation IRev 22.6 22.6 22.5 dB Comment/Test Condition PCB and SMA losses of 0.07dB substracted fgalileo = 1559 MHz Input P1dB IP1dB -5.8 -5.7 -5.4 dBm fgps = 1575.42 MHz f GLONASS = 1605.38 MHz Output P1dB Input IP3 In-band Output IP3 In-band OP1dB 10.4 10.4 10.5 dBm IIP3 6.4 6.5 6.2 dBm f1gal/gps = 1575 MHz f2gal/gps = 1576MHz OIP3 23.6 23.6 23.1 dBm f1GLONASS =1602 MHz f2GLONASS =1603 MHz Input power= -30dBm LTE band-13 nd 2 Harmonic Input IP3 out-of-band Stability H2 – input referred -46.2 dBm IIP3OOB 8.6 dBm k >1 -- Application Note AN297, Rev. 1.0 13 / 25 fIN = 787.76 MHz PIN = -25 dBm fH2 = 1575.52 MHz f1 = 1712.7 MHz f2 = 1850 MHz Input power = -20dBm fIIP3 = 1575.4 MHz Unconditionnally Stable from 0 to 10GHz 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for COMPASS/Galileo, GPS and GLONASS bands 5 Measured Graphs for COMPASS/Galileo, GPS and GLONASS bands Gain 20 Gain at Vcc=1.8V Gain at Vcc=2.8V 10 S21 (dB) 0 1559 MHz 17 dB -10 1605.4 MHz 16.7 dB 1575.4 MHz 17.1 dB -20 -30 -40 -50 -60 0 Figure 5 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Frequency (MHz) Power gain of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands Narrowband gain 18 1559 MHz 17.2 dB 17.5 1575.4 MHz 17.1 dB 1605.4 MHz 16.9 dB 17 S21 (dB) 16.5 1559 MHz 17 dB 16 1575.4 MHz 16.9 dB 1605.4 MHz 16.7 dB 15.5 15 14.5 Gain at Vcc=1.8V 14 Gain at Vcc=2.8V 13.5 13 1500 Figure 6 1525 1550 1575 1600 Frequency (MHz) 1625 1650 Narrowband power gain of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands Application Note AN297, Rev. 1.0 14 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for COMPASS/Galileo, GPS and GLONASS bands Input matching 0 S11 at Vcc=1.8V S11 at Vcc=2.8V S11 (dB) -5 1559 MHz -14.1 dB -10 1575.4 MHz -14.7 dB -15 1559 MHz -14.6 dB 1575.4 MHz -15.3 dB -20 -25 1500 Figure 7 1605.4 MHz -15.6 dB 1525 1550 1605.4 MHz -16.4 dB 1575 1600 Frequency (MHz) 1625 1650 Input matching of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands Output matching 0 -5 -10 1559 MHz -20 dB S22 (dB) -15 1605.4 MHz -14.8 dB -20 -25 1575.4 MHz -19.3 dB -30 1605.4 MHz -15.8 dB 1559 MHz -22.3 dB -35 -40 S22 at Vcc=1.8V -45 S22 at Vcc=2.8V -50 1500 Figure 8 1575.4 MHz -17.7 dB 1525 1550 1575 1600 Frequency (MHz) 1625 1650 Output matching of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands Application Note AN297, Rev. 1.0 15 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for COMPASS/Galileo, GPS and GLONASS bands Isolation -17 S12 at Vcc=1.8V S12 at Vcc=2.8V S12 (dB) -19 1575.4 MHz -22.2 dB 1559 MHz -22.3 dB -21 -23 1575.4 MHz -22.6 dB 1559 MHz -22.6 dB 1605.4 MHz -22.2 dB 1605.4 MHz -22.5 dB -25 -27 1500 Figure 9 1525 1550 1575 1600 Frequency (MHz) 1625 1650 Reverse isolation of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands Noise figure 1 NF at Vcc=1.8V 0.9 NF at Vcc=2.8V 0.8 NF (dB) 0.7 1559 MHz 0.607 1575.4 MHz 0.611 1605.4 MHz 0.604 0.6 0.5 1559 MHz 0.605 1575.4 MHz 0.595 1605.4 MHz 0.601 0.4 0.3 0.2 0.1 0 1559 Figure 10 1567 1575 1583 1591 Frequency (MHz) 1599 1607 1615 Noise figure of BGA825L6S for COMPASS, Galileo, GPS and GLONASS bands Application Note AN297, Rev. 1.0 16 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for COMPASS/Galileo, GPS and GLONASS bands Compression point at 1dB with Vcc=1.8V 18 -30 dBm 17 17 Gain (dB) 16 -8.44 dBm 16 -30 dBm 16.9 dB 15 -8.61 dBm 15.9 dB -30 dBm 16.7 dB -8.48 dBm 15.7 dB 14 13 12 P1dB at Vcc=1.8V GPS (1575.42MHz) 11 P1dB at Vcc=1.8V GLONASS (1605MHz) P1dB at Vcc=1.8V Compass (1559MHz) 10 -30 Figure 11 -25 -20 -15 Power (dBm) -10 -5 0 Input 1 dB compression point of BGA825L6S at supply voltage of 1.8V for COMPASS, Galileo, GPS and GLONASS bands Compression point at 1dB with Vcc=2.8V 18 -30 dBm 17.2 -5.75 dBm 16.2 17 Gain (dB) 16 15 -5.68 dBm 16.1 dB -30 dBm 17.1 dB -30 dBm 16.9 dB -5.37 dBm 15.9 dB 14 13 12 P1dB at Vcc=2.8V GPS (1575.42MHz) P1dB at Vcc=2.8V GLONASS (1605MHz) 11 P1dB at Vcc=2.8V Compass (1559MHz) 10 -30 Figure 12 -25 -20 -15 Power (dBm) -10 -5 0 Input 1 dB compression point of BGA825L6S at supply voltage of 2.8V for COMPASS, Galileo, GPS and GLONASS bands Application Note AN297, Rev. 1.0 17 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for COMPASS/Galileo, GPS and GLONASS bands Intermodulation for GPS Band at Vcc = 1.8V 0 1576 MHz -13.19 dB 1575 MHz -13.16 dB Power (dBm) -20 -40 -60 1574 MHz -81.2 dB -80 -100 1573.5 Figure 13 1574.5 1575.5 Frequency (MHz) 1576.5 1577.5 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=1.8V Intermodulation for GPS Band at Vcc = 2.8V 0 1575 MHz -12.97 dB 1576 MHz -13 dB Power (dBm) -20 -40 -60 -80 1574 MHz -86.1 dB -100 1573.5 Figure 14 1574.5 1575.5 Frequency (MHz) 1576.5 1577.5 Carrier and intermodulation products of BGA825L6S for GPS band at Vcc=2.8V Application Note AN297, Rev. 1.0 18 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Measured Graphs for COMPASS/Galileo, GPS and GLONASS bands Intermodulation for GLONASS Band at Vcc = 1.8V 0 1602 MHz -13.39 dB 1603 MHz -13.36 dB Power (dBm) -20 -40 -60 1601 MHz -81.61 dB -80 -100 1600.5 Figure 15 1601.5 1602.5 Frequency (MHz) 1603.5 1604.5 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=1.8V Intermodulation for GLONASS Band at Vcc = 2.8V 0 1603 MHz -13.24 dB 1602 MHz -13.22 dB Power (dBm) -20 -40 -60 -80 1601 MHz -85.87 dB -100 1600.5 Figure 16 1601.5 1602.5 Frequency (MHz) 1603.5 1604.5 Carrier and intermodulation products of BGA825L6S for GLONASS band at Vcc=2.8V Application Note AN297, Rev. 1.0 19 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Miscellaneous Measured Graphs 6 Miscellaneous Measured Graphs Swp Max 1615MHz Output 2. 0 6 0. 0.8 1.0 Input and Output matching with Vcc=1.8V Input 0. 4 0 3. 5.0 10.0 5.0 4.0 3.0 10.0 2.0 1.0 1605 MHz r 0.758 x 0.166 0.8 0.4 0.2 0.6 0.2 1559 MHz r 0.679 x 0.0805 0 0 4. 1575 MHz r 0.705 x 0.113 1559 MHz r 1.07 x -0.195 -10.0 1575 MHz r 1.08 x -0.261 4 .0 -5. 0 1605 MHz r 1.07 x -0.377 -3 .0 2 -0. Figure 17 .0 -2 Swp Min 1559MHz -1.0 -0.8 -0 .6 .4 -0 Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=1.8V Swp Max 1615MHz 0. 4 0 3. 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 0.4 1605.4 MHz r 1.12 x -0.325 .0 -2 -1.0 -0.8 -0 .6 .4 -0 -3 .0 0.2 0 10.0 1559 MHz r 1.09 x -0.133 1575.4 MHz r 1.11 x -0.2 2 -0. Figure 18 5.0 -4 .0 -5. 0 1575.4 MHz r 0.716 x 0.0812 1559 MHz r 0.691 x 0.0493 0 4. 1605.4 MHz r 0.767 x 0.135 -10.0 Output 2. 0 6 0. 0.8 1.0 Input and Output matching with Vcc=2.8V Input Swp Min 1559MHz Input and output matching for COMPASS, Galileo, GPS and GLONASS bands with Vcc=2.8V Application Note AN297, Rev. 1.0 20 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Miscellaneous Measured Graphs Stability Mu1 factor 2 Stability Mu1 factor at Vcc=1.8V Stability Mu1 factor at Vcc=2.8V 1575.4 MHz 1.35 1.5 1 1575.4 MHz 1.29 0.5 0 0 Figure 19 1000 2000 3000 4000 5000 6000 Frequency (MHz) 7000 8000 9000 10000 Stability factor µ1 of BGA825L6S upto 10GHz Stability Mu2 factor 2 1575.4 MHz 1.32 1.5 1 1575.4 MHz 1.26 0.5 Stability Mu2 factor at Vcc=1.8V Stability Mu2 factor at Vcc=2.8V 0 0 Figure 20 1000 2000 3000 4000 5000 6000 Frequency (MHz) 7000 8000 9000 10000 Stability factor µ2 of BGA825L6S upto 10GHz Application Note AN297, Rev. 1.0 21 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Miscellaneous Measured Graphs Stability K factor 5 Stability K factor at Vcc=1.8V Stability K factor at Vcc=2.8V 4 3 1575.4 MHz 1.15 2 1 1575.4 MHz 1.13 0 0 Figure 21 1000 2000 3000 4000 5000 6000 Frequency (MHz) 7000 8000 9000 10000 Stability factor k of BGA825L6S upto 10GHz Application Note AN297, Rev. 1.0 22 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Evaluation Board 7 Evaluation Board Figure 22 Populated PCB picture of BGA825L6S Vias RO4003, 0.2mm Copper 35µm Figure 23 FR4, 0.8mm PCB layer stack Application Note AN297, Rev. 1.0 23 / 25 2012-09-25 BGA825L6S High-Gain LNA for GPS/GLONASS/Galileo/COMPASS Authors 8 Authors Jagjit Singh Bal, Senior Application Engineer of Business Unit “RF and Protection Devices”. Dr. Chih-I Lin, Senior Staff Engineer of Business Unit “RF and Protection Devices”. Application Note AN297, Rev. 1.0 24 / 25 2012-09-25 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN297