B G M10 34 N7 High Gain Fro nt - En d Mod ule for Gl obal Na vig atio n S atelli te S ys te m s (G N SS ) Applic atio n Usi ng L ow - Q In du c tors Applic atio n N ote A N 268 Revision: Rev. 1.2 2012-05-05 RF and P r otecti on D evic es Edition 2012-05-05 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 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BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Application Note AN268 Revision History: 2012-05-05 Previous Revision: Rev. 1.1, 2011-09-16 Page 11-12 Subjects (major changes since last revision) GLONASS measurement results added Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. 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Last Trademarks Update 2011-11-11 Application Note AN268, Rev. 1.2 3 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors List of Content, Figures and Tables Table of Content 1 BGM1034N7 GPS and GLONASS Front-End Module ..................................................................... 5 2 Introduction ........................................................................................................................................ 6 3 Description .......................................................................................................................................... 8 4 Application Circuit and Block Diagram ........................................................................................... 9 5 Measurement Results ...................................................................................................................... 10 6 Measured Graphs for GPS and GLONASS Bands ........................................................................ 12 7 Evaluation Board and layout Information ...................................................................................... 20 8 Authors .............................................................................................................................................. 21 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 BGM1034N7 in TSNP-7-10 Package................................................................................................... 5 RF System Overview: Mobile Phone ................................................................................................... 6 GNSS system with integrated GNSS FEM BGM1034N7 for mobile/portable and personal navigation devices ................................................................................................................................................. 7 Block Diagram of BGM1034N7 ............................................................................................................ 8 Schematic diagram of the BGM1034N7 application circuit .................................................................. 9 Power Gain of BGM1034N7 for GPS and GLONASS bands ............................................................ 12 Noise Figure of BGM1034N7 for GPS and GLONASS bands ........................................................... 12 Wideband Insertion Power Gain including out-of-band attenuation of the BGM1034N7................... 13 Input Matching of BGM1034N7 for GPS and GLONASS bands ....................................................... 13 Output Matching of BGM1034N7 for GPS and GLONASS bands ..................................................... 14 Reverse Isolation of BGM1034N7 for GPS and GLONASS bands ................................................... 14 Input 1dB Compression Point of BGM1034N7 at supply voltage of 1.8V for GPS and GLONASS bands .................................................................................................................................................. 15 Input 1dB Compression Point of BGM1034N7 at supply voltage of 2.8V for GPS and GLONASS bands .................................................................................................................................................. 15 Carrier and intermodulation products of BGM1034N7 for GPS band at Vcc=1.8V ........................... 16 Carrier and intermodulation products of BGM1034N7 for GPS band at Vcc=2.8V ........................... 16 Carrier and intermodulation products of BGM1034N7 for GLONASS band at Vcc=1.8V ................. 17 Carrier and intermodulation products of BGM1034N7 for GLONASS band at Vcc=2.8V ................. 17 Stability Factor K of BGM1034N7 for GPS and GLONASS applications........................................... 18 Stability Factor µ1 of BGM1034N7 for GPS and GLONASS applications ......................................... 18 Stability Factor µ2 of BGM1034N7 for GPS and GLONASS applications ......................................... 19 Picture of Evaluation Board M110718 V3.0 ....................................................................................... 20 PCB Layer Information ....................................................................................................................... 20 List of Tables Table 1 Table 2 Table 3 Table 4 Pin Assignment of BGM1034N7 .......................................................................................................... 9 Bill-of-Materials..................................................................................................................................... 9 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V .............................................. 10 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V .............................................. 11 Application Note AN268, Rev. 1.2 4 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors BGM1034N7 GPS and GLONASS Front-End Module 1 BGM1034N7 GPS and GLONASS Front-End Module 1.1 Features 1.2 Operating frequency: 1575.42 MHz and 1598.061605.38 MHz High Gain: 17.0 dB Low Noise Figure (GPS): 1.7 dB Low current consumption: 3.9 mA Out-of-band rejection in cellular bands: > 43dBc Input compression point in cellular bands: 22dBm Supply voltage: 1.5 V to 3.6 V 3 Tiny TSNP-7-10 leadless package (2.3 x 1.7 x 0.73 mm ) RF output internally matched to 50 Ω IEC ESD contact discharge of RF input pin: 6 kV Only 3 external SMD parts RoHS compliant package (Pb-free) Figure 1 BGM1034N7 in TSNP-7-10 Package Applications - GPS (Global Positioning System) working in the L1 band at 1575.42 MHz - GLONASS (Globalnaya Navigatsionnaya Sputnikovaya Sistema) working in the L1 band from 1598.06 MHz to 1605.38 MHz Application Note AN268, Rev. 1.2 5 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Introduction 2 Introduction Global Navigation Satellite System or GNSS receiver, as we know, works on the reception of location based information from satellite signals. There are several standards worldwide like GPS, GLONASS, Galileo and COMPASS Bei Du. However, the power levels of the satellite signals received, can be lower than -130 dBm. This poses a challenge on the sensitivity of the GNSS receiver. Along with this, the ever growing disturbing or jamming signals in the adjacent cellular bands makes the design of the receiver front-end even more difficult. The rapidly growing market for GNSS systems is driving the design of advanced and high-performance GNSS receivers. A simple overview of the GNSS RF system in a mobile phone or other handheld devices is shown in Figure 2. Mobile Phone / Handheld device Satellite GNSS signal Tranceiver module GSM800/GSM900/ DCS/PCS1800/ UMTS/ WLAN GNSS Receiver IC Figure 2 Int. LNA Tx Signal GNSS Signal < -130dBm GNSS RF Front-end module ESD protection Blocking Signal RF System Overview: Mobile Phone GNSS receivers for mobile or handheld applications are always under the threat of high power cellular signals. Due to the coexistence of GNSS and Cellular services, there is a strong coupling of the DCS/PCS and Cellular signals to the GNSS receiver. The performance of a standard integrated GNSS receiver chip cannot meet the specifications required for the present systems. An external RF front-end is essential to achieve this required performance. The most important prerequisites for the front-end of a GNSS receiver are low noise figure and sufficient amplification of the desired signal together with high attenuation of the jamming signals. Application Note AN268, Rev. 1.2 6 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors 2.1 Systems overview of a GNSS receiver Several configurations can be adopted for a GNSS receiver chain. In all configurations, as mentioned earlier, a RF front-end like BGM1034N7 is placed between the antenna and the GNSS receiver chip. Mobile/portable devices as well as personal navigation devices request decreasing form factor used by the implementation of the GNSS function in the devices. BGM1034N7 supports the designers to minimize the area in the front-end. Such a configuration is shown in Figure 3. The BGM1034N7 can also be used for the active antenna module. Embedded ANT BGM1034N7 LNA BPF GNSS Receiver IC Figure 3 GNSS system with integrated GNSS FEM BGM1034N7 for mobile/portable and personal navigation devices Application Note AN268, Rev. 1.2 7 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Description 3 Description The BGM1034N7 is a combination of a low-insertion-loss pre-filter with Infineon’s high performance low noise amplifier (LNA) for Global Positioning System (GPS) and Globalnaya Navigatsionnaya Sputnikovaya Sistema (GLONASS) applications. Both, GPS and GLONASS frequency bands, can be used at the same time. Through the low insertion loss of the filter, the BGM1034N7 provides 17 dB gain, 1.7 dB noise figure and high linearity performance. In addition BGM1034N7 provides very high out-of-band attenuation in conjunction with a high input compression point. It can withstand IEC61000-4-2 ESD contact discharge at the RF input as high as 6 kV in the application circuit shown in Figure 4. Its current consumption is as low as 3.9 mA. It operates over the 1.5 V to 3.6 V supply voltage range. Figure 4 Block Diagram of BGM1034N7 Application Note AN268, Rev. 1.2 8 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Application Circuit and Block Diagram 4 Application Circuit and Block Diagram The BGM1034N7 is internally matched at the output to 50 Ohm. The LNA bias circuitry is also integrated on chip. Therefore, only three external components are required in the application. The application schematic is shown in Figure 5 and the function of the external passives is listed in Table 2. 4.1 Application Schematic Figure 5 Schematic diagram of the BGM1034N7 application circuit Table 1 Pin Assignment of BGM1034N7 Pin No. Symbol Function 1 VCC Power Supply 2 PON Power ON/OFF 3 RFIN RF Input 4 SO Pre-Filter Output 5 AI LNA Input 6 RFOUT RF Output 7 GND DC ground Table 2 Bill-of-Materials Symbol Value Unit Size C1 L1 0.1 µF 0402 Various Supply filtering 8.2 nH 0402 Murata LQG series Matching / ESD Inductor L2 7.5 nH 0402 Murata LQG series Matching Inductor Q1 BGM1034N7 TSNP-7-10 Infineon GPS/GLONASS FEM Application Note AN268, Rev. 1.2 Manufacturer 9 / 22 Comment 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measurement Results 5 Measurement Results Measurement results of the BGM1034N7 are presented in this section. The measurements are performed on the Infineon application board at room temperature. The performances of the BGM1034N7 are here provided for the voltage of 1.8V (Table 3) and 2.8V (Table 4). The data exclude PCB and SMA connector losses, unless otherwise mentioned. Table 3 Electrical Characteristics (at room temperature), Vcc = Vpon = 1.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 1.8 V DC Current Icc 4.1 mA Navigation System Sys GPS GLONASS Frequency Range Freq 1575.42 1598-1606 MHz Gain G 17.0 16.8 dB Noise Figure NF 1.72 2.03 dB RLin 17.2 14.3 dB RLout 11.5 15.13 dB IRev 33.9 34.8 dB Input P1dB IP1dB -13.0 -13.4 dBm Output P1dB OP1dB 3 2.4 dBm IIP3 -8.6 -8.4 dBm 8.4 f1gps = 1575.42 MHz, f2gps = 1576.42 MHz dBm f1GLONASS =1603 MHz, f2GLONASS =1604 MHz P1IN = P2IN = -30 dBm Input Return Loss Output Return Loss Reverse Isolation Input IP3 In-band Output IP3 In-band OIP3 Rejection 750MHz Rejection 900MHz 1 1 8.4 PCB and SMA connectors of 0.1 dB losses substracted fgps = 1575.42 MHz f GLONASS = 1605 MHz Rej750M 56.1 dBc f = 750 MHz Rej900M 55.8 dBc f = 806 MHz - 928 MHz 1 Rej1800M 49.7 dBc f = 1710 MHz - 1980 MHz 1 Rej2400M 62.6 dBc f = 2400 MHz - 2500 MHz Input P1dB IP1dB900M 22.0 dBm f = 900 MHz Input P1dB IP1dB1710M 26.0 dBm f = 1710 MHz Input IP3 out-of-band IIP3OOB 64.6 dBm k >1 Rejection 1800MHz Rejection 2400MHz Stability 1 -- f1 = 1712.7 MHz, f2 = 1850 MHz P1IN = +10 dBm, P2IN = +10 dBm Unconditionnally Stable from 0 to 10GHz Rejection is defined as following: [Gain at 1575.42 MHz] – [Attenuation@stopband frequency Application Note AN268, Rev. 1.2 10 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measurement Results Table 4 Electrical Characteristics (at room temperature), Vcc = Vpon = 2.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 V DC Current Icc 4.2 mA Navigation System Sys GPS GLONASS Frequency Range Freq 1575.42 1598-1606 MHz Gain G 16.9 16.8 dB Noise Figure NF 1.71 2.03 dB RLin 17.2 14.3 dB RLout 11.1 14.5 dB IRev 33.9 34.8 dB Input P1dB IP1dB -13.1 -12.7 dBm Output P1dB OP1dB 2.8 3.1 dBm IIP3 -8.7 -8.6 dBm 8.2 f1gps = 1575.42 MHz, f2gps = 1576.42 MHz dBm f1GLONASS =1603 MHz, f2GLONASS =1604 MHz Input power= -30 dBm Input Return Loss Output Return Loss Reverse Isolation Input IP3 In-band Output IP3 In-band OIP3 Rejection 750MHz Rejection 900MHz 1 1 8.2 PCB and SMA connectors of 0.1 dB losses substracted fgps = 1575.42 MHz f GLONASS = 1605 MHz Rej750M 56.2 dBc f = 750 MHz Rej900M 55.9 dBc f = 806 MHz - 928 MHz 1 Rej1800M 49.8 dBc f = 1710 MHz - 1980 MHz 1 Rej2400M 62.7 dBc f = 2400 MHz - 2500 MHz Input P1dB IP1dB900M 22.0 dBm f = 900 MHz Input P1dB IP1dB1710M 26.0 dBm f = 1710 MHz Input IP3 out-of-band IIP3OOB 65.1 dBm k >1 -- Rejection 1800MHz Rejection 2400MHz Stability 1 f1 = 1712.7 MHz, f2 = 1850 MHz P1IN = +10 dBm, P2IN = +10 dBm Unconditionnally Stable from 0 to 10GHz Rejection is defined as following: [Gain at 1575.42 MHz] – [Attenuation@stopband frequency Application Note AN268, Rev. 1.2 11 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands 6 Measured Graphs for GPS and GLONASS Bands Insertion Power Gain In Band 20 1.575 GHz 16.97 dB 1.6054 GHz 16.68 dB DB(|S(2,1)|) BGM1034N7_LQ_1.8V DB(|S(2,1)|) BGM1034N7_LQ_2.8V 15 1.5981 GHz 16.91 dB 10 5 0 1.5 1.51 1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.6 1.61 1.62 1.63 1.64 Frequency (GHz) Figure 6 Power Gain of BGM1034N7 for GPS and GLONASS bands Noise Figure 4 NF @ Vcc=1.8V NF @ Vcc=2.8V 3.5 3 2.5 1.605 GHz 2.03 dB 1.598 GHz 1.89 dB 1.575 GHz 1.71 dB 2 1.5 1 1.56 Figure 7 1.565 1.57 1.575 1.58 1.585 1.59 Frequency (GHz) 1.595 1.6 1.605 1.61 Noise Figure of BGM1034N7 for GPS and GLONASS bands Application Note AN268, Rev. 1.2 12 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Transducer Power Gain Wideband 20 1.598 GHz 16.92 dB 1.575 GHz 16.97 dB 0 DB(|S(2,1)|) BGM1034N7_LQ_1.8V DB(|S(2,1)|) BGM1034N7_LQ_2.8V 1.605 GHz 16.67 dB 0.75 GHz -39.21 dB -20 -40 -60 0.9 GHz -38.88 dB 1.98 GHz -32.62 dB 2.45 GHz -45.45 dB -80 -100 0 1 2 3 4 5 6 Frequency (GHz) Figure 8 Wideband Insertion Power Gain including out-of-band attenuation of the BGM1034N7 Input Matching 0 1.5981 GHz -16.6 dB -10 1.6054 GHz -14.31 dB -20 1.5754 GHz -17.15 dB DB(|S(1,1)|) BGM1034N7_LQ_1.8V -30 DB(|S(1,1)|) BGM1034N7_LQ_2.8V -40 1.5 1.52 1.54 1.56 1.58 1.6 1.62 1.64 Frequency (GHz) Figure 9 Input Matching of BGM1034N7 for GPS and GLONASS bands Application Note AN268, Rev. 1.2 13 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Output Matching 0 1.5754 GHz -11.08 dB 1.5981 GHz -14.47 dB -10 1.6054 GHz -15.11 dB 1.5754 GHz -11.51 dB -20 DB(|S(2,2)|) BGM1034N7_LQ_1.8V 1.5981 GHz -15.13 dB DB(|S(2,2)|) BGM1034N7_LQ_2.8V 1.6054 GHz -15.82 dB -30 -40 1.5 1.52 1.54 1.56 1.58 1.6 1.62 1.64 Frequency (GHz) Figure 10 Output Matching of BGM1034N7 for GPS and GLONASS bands Reverse Isolation -20 DB(|S(1,2)|) BGM1034N7_LQ_1.8V DB(|S(1,2)|) BGM1034N7_LQ_2.8V -30 1.5754 GHz -33.88 dB 1.5981 GHz -34.79 dB 1.6054 GHz -35.24 dB -40 -50 -60 1.5 1.52 1.54 1.56 1.58 1.6 1.62 1.64 Frequency (GHz) Figure 11 Reverse Isolation of BGM1034N7 for GPS and GLONASS bands Application Note AN268, Rev. 1.2 14 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Compression point at 1dB Vcc = 1.8V 25 P1dB @ Vcc=1.8V GPS (1575.42 MHz) P1dB @ Vcc=1.8V GLONASS (1598.06 MHz) 20 15 -25 dBm 16.89 P1dB @ Vcc=1.8V GLONASS (1605.38 MHz) -25 dBm 16.87 -13.42 dBm 15.89 -25 dBm 16.67 -13.03 dBm 15.87 -13.08 dBm 15.67 10 5 -25 -20 -15 -10 -5 0 Power (dBm) Figure 12 Input 1dB Compression Point of BGM1034N7 at supply voltage of 1.8V for GPS and GLONASS bands Compression point at 1dB Vcc = 2.8V 25 P1dB @ Vcc=2.8V GPS (1575.42 MHz) P1dB @ Vcc=2.8V GLONASS (1598.06 MHz) -25 dBm 16.89 20 P1dB @ Vcc=2.8V GLONASS (1605.38 MHz) -25 dBm 16.89 -13.15 dBm 15.89 -25 dBm 16.68 15 -12.73 dBm 15.89 -12.74 dBm 15.68 10 5 -25 -20 -15 -10 -5 0 Power (dBm) Figure 13 Input 1dB Compression Point of BGM1034N7 at supply voltage of 2.8V for GPS and GLONASS bands Application Note AN268, Rev. 1.2 15 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands In Band OIP3 GPS 0 1.5754 GHz -13.18 1.5764 GHz -13.18 Power (dBm) -20 -40 1.5774 GHz -56.43 -60 -80 -100 1.57342 1.57442 1.57542 1.57642 1.57742 1.57842 Frequency (GHz) Figure 14 Carrier and intermodulation products of BGM1034N7 for GPS band at Vcc=1.8V In Band OIP3 GPS 0 1.5754 GHz -13.19 1.5764 GHz -13.2 Power (dBm) -20 -40 1.5774 GHz -55.91 -60 -80 -100 1.57342 1.57442 1.57542 1.57642 1.57742 1.57842 Frequency (GHz) Figure 15 Carrier and intermodulation products of BGM1034N7 for GPS band at Vcc=2.8V Application Note AN268, Rev. 1.2 16 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands In Band OIP3 GLONASS 0 1.603 GHz -13.46 1.604 GHz -13.51 Power (dBm) -20 -40 1.605 GHz -57.67 -60 -80 -100 1.601 1.602 1.603 1.604 1.605 1.606 Frequency (GHz) Figure 16 Carrier and intermodulation products of BGM1034N7 for GLONASS band at Vcc=1.8V In Band OIP3 GLONASS 0 1.603 GHz -13.44 1.604 GHz -13.49 Power (dBm) -20 -40 1.605 GHz -57.75 -60 -80 -100 1.601 1.602 1.603 1.604 1.605 1.606 Frequency (GHz) Figure 17 Carrier and intermodulation products of BGM1034N7 for GLONASS band at Vcc=2.8V Application Note AN268, Rev. 1.2 17 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Stability K Factor 4 Stability K factor BGM1034N7_LQ_1.8V 3.5 Stability K factor BGM1034N7_LQ_2.8V 1.5754 GHz 3.295 3 2.5 2 0.1 2.1 4.1 6.1 8.1 10 Frequency (GHz) Figure 18 Stability Factor K of BGM1034N7 for GPS and GLONASS applications Stability Mu1 4 1.6054 GHz 3.604 1.5981 GHz 3.482 3 2 MU1() BGM1034N7_LQ_1.8V MU1() BGM1034N7_LQ_2.8V 1.5754 GHz 2.461 1 0 0.1 2.1 4.1 6.1 8.1 10 Frequency (GHz) Figure 19 Stability Factor µ1 of BGM1034N7 for GPS and GLONASS applications Application Note AN268, Rev. 1.2 18 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Measured Graphs for GPS and GLONASS Bands Stability Mu2 4 1.5754 GHz 3.891 1.5981 GHz 3.934 1.6054 GHz 3.368 3 2 MU2() BGM1034N7_LQ_1.8V 1 MU2() BGM1034N7_LQ_2.8V 0 0.1 2.1 4.1 6.1 8.1 10 Frequency (GHz) Figure 20 Stability Factor µ2 of BGM1034N7 for GPS and GLONASS applications Application Note AN268, Rev. 1.2 19 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Evaluation Board and layout Information 7 Evaluation Board and layout Information In this application note, the following PCB is used: PCB Marking: M110718 V3.0 PCB material: FR4 r of PCB material: 4.3 Figure 21 Picture of Evaluation Board M110718 V3.0 Vias FR4, 0.2mm Copper 35µm Figure 22 FR4, 0.8mm PCB Layer Information Application Note AN268, Rev. 1.2 20 / 22 2012-05-05 BGM1034N7 FEM for GPS and GLONASS Applications using Low-Q Inductors Authors 8 Authors Thomas Schwingshackl, Application Engineer of Business Unit “RF and Protection Devices” Jagjit Singh Bal, Application Engineer of Business Unit “RF and Protection Devices” Dr. Chih-I Lin, Senior Staff Engineer of Business Unit “RF and Protection Devices” Application Note AN268, Rev. 1.2 21 / 22 2012-05-05 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN268