MAKO SEMICONDUCTOR

DB151S THRU DB157S
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
Voltage Range - 50 to 1000 Volts
DBS
FEATURES
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
High temperature soldering guaranteed:
250*/10 seconds / 0.375''(9.5mm)
led length at 5 lbs., (2.3kg)tension
Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
High surge current capability
.205(5.2)
M
.195(5.0)
+
AK
.047(1.20)
.040(1.02)
.335(8.51)
.320(8.13) 45
.120(3.05)
O
.130(3.30)
Current - 1.5 Ampere
MECHANICAL DATA
.404(10.3)
.386(9.80)
.0088(0.22)
.003(0.076)
.040(1.02)
Dimensions in inches and (millimeters)
M
.013(0.33)
.060(1.53)
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Mounting Position: Any
Weight:0.02 ounce, 0.4 grams
SE
.013(0.33)
.255(6.5)
.245(6.2)
IC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOLS
VF
IR
50
Amps
1.1
Volts
10
500
-55 to +150
-55 to +150
µA
µA
NOTES:DBS for surface mount package.
MAKO SEMICONDUCTOR
R
TJ
TSTG
Amps
O
CT
IFSM
1.5
U
IF(AV)
D
VRRM
VRMS
VDC
DB151S DB152S DB153S DB154S DB155S DB156S DB157S UNITS
50
100
200
400
600
800 1000 VOLTS
35
70
140
280
420
560
700 VOLTS
50
100
200
400
600
800 1000 VOLTS
N
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TA=40*
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per birdge element at 1.5A
Maximum DC reverse current
TA=25*
at rated DC blocking voltage
TA=125*
Operating temperature range
storage temperature range
O
Ratings at 25* ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load, For capacitive load derate current by 20%.
C
C
RATINGS AND CHARACTERISTIC CURVES DB151S THRU DB157S
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD CURRENT.(A)
AVERAGE FORWARD CURRENT(A)
FIG. 1- MAXIMUN DERATING CURVE FOR
OUTPUT RECTIFIED CURRENT
2.5
0.6''(1.5mm)
M
2.0
Copper Pauls .51''x.51''
(13mmx13mm)
1.5
AK
1.0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.5
20
O
0
40
60
80
100
120
140 150
60
TJ=25*
Single sine-wave
(JEDEC Method)
50
40
30
20
10
0
1
2
M
TJ=125*
IC
10
1
O
1.0
0.1
TJ=25*
.10
20
40
60
80
100
120
6
10
20
40
100
60
FIG. 4-TYPICAL FORWARD CHARACTERISTICS
PER BRIDGE ELEMNT
10
1
0.1
N
0.01
.01
0
INSTANTANEOUS REVERSE CURRENT.(A)
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
4
NUMBER OF CYCLES AT 60 Hz
SE
140
TJ=25*
PULSE WIDTH:300*S
1% DUTY CYCLE
D
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
CT
U
FIG. 3-TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
100
O
10
R
CAPACITANCE.(pF)
INSTANTANEOUS REVERSE CURRENT(*A)
AMBIENT TEMPERATURE, C
TJ=25*
f=1.0MHZ
Visg=50mV p-p
1
1
10
100
REVERSE VOLTAGE.(V)
MAKO SEMICONDUCTOR