LS846 LOW NOISE LOW LEAKAGE SINGLE N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW INPUT CAPACITANCE CISS = 4pF RATINGS1 ABSOLUTE MAXIMUM @ 25 °C (unless otherwise stated) Maximum Temperatures TO-72 TO-92 SOT-23 TOP VIEW TOP VIEW TOP VIEW SOT-23 TOP VIEW Storage Temperature -55 to +150°C Operating Junction Temperature -55 to +150°C D 1 300mW 3 S 2 Maximum Power Dissipation 3 Continuous Power Dissipation TA=25°C G Maximum Currents Gate Forward Current IG(F) = 10mA Maximum Voltages Gate to Source VGSO = 60V Gate to Drain VGDO = 60V SYMBOL BVGSS CHARACTERISTIC2 Gate to Source Breakdown Voltage MIN *For equivalent Monolithic Dual, see LS843 Family TYP MAX -60 UNITS CONDITIONS V VDS = 0, ID = 1nA VGS(OFF) Gate to Source Pinch-off Voltage -1 -3.5 V VDS = 15V, ID = 1nA VGS Gate to Source Operating Voltage -0.5 -3.5 V VDS = 15V, ID = 500µA IDSS Drain to Source Saturation Current 1.5 5 15 mA VDS = 15V, VGS = 0 IG Gate Operating Current -15 -50 pA VDG = 15V, ID = 500µA IG Gate Operating Current Reduced VDG -5 -30 pA VDG = 3V, ID = 500µA IGSS Gate to Source Leakage Current Gfss Full Conductance Transconductance 1500 -100 Gfs Typical Operation Transconductance 1000 VGS = 15V, VDS = 0 VDS = 15V, VGS = 0, f = 1kHz µS VDS = 15V, ID = 200µA 40 µS VDS = 15V, VGS = 0 2.70 µS VDS = 15V, ID = 200µA 0.5 dB VDS = 15V, VGS = 0, RG = 10MΩ, f = 100Hz, NBW = 6Hz 7 nV/√Hz VDS = 15V, ID = 500µA, f = 1kHz, NBW = 1Hz Noise Voltage 11 nV/√Hz VDS = 15V, ID = 500µA, f = 10Hz, NBW = 1Hz CISS Common Source Input Capacitance 8 pF CRSS Common Source Reverse Transfer Cap. 3 pF GOSS Full Output Conductance GOS Typical Operation Output Conductance NF Noise Figure en Noise Voltage en Linear Integrated Systems 1500 pA µS 2.0 3 VDS = 15V, ID = 500µA, f = 1MHz • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201152 05/20/2014 Rev#A11 ECN# LS846 STANDARD PACKAGE DIMENSIONS: TO-72 TO-92 SOT-23 SOT-23 Four Lead 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS *Dimensions in inches NOTES: 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate negative electrical polarity only. 3. Derate 2.8mW/ºC above 25ºC. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201152 05/20/2014 Rev#A11 ECN# LS846