LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM IVGS1-2I=1mV max. RATINGS1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature -55º to +150°C Operating Junction Temperature -55º to +150°C Maximum Voltage and Current for Each Transistor1 -VGSS Gate Voltage to Drain or Source 60V IG(f) Gate Forward Current 50mA Maximum Power Dissipation2 Device Dissipation2 @ Free Air - Total 400mW TA=+25°C ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted) SYMBOL CHARACTERISTIC I VGS1-2 / TI max. Drift vs. Temperature LS843 LS844 LS845 UNITS 5 10 25 µV/ºC CONDITIONS VDG= 10V ID= 500µA TA= -55ºC to +125ºC IVGS1-2I max. Offset Voltage 1 5 15 mV SYMBOL CHARACTERISTIC3 BVGSS BVGGO VGS= 10V ID= 500µA MIN. TYP. MAX. UNITS Breakdown Voltage -60 -- -- V VDS= 0 Gate-to-Gate Breakdown ±60 -- -- V IGGO= ±1µA ID= 0 IS= 0 f = 1kHz CONDITIONS ID= -1nA TRANSCONDUCTANCE Gfss Full Conduction 1500 -- -- µS VDS= 15V VGS= 0 Gfs Typical Conduction 1000 1500 -- µS VDS= 15V ID= 500µA │Gfs1-2/Gfs1│ Mismatch -- 0.6 3 % 1.5 5 15 mA VDS= 15V VGS= 0 -- 1 5 % DRAIN CURRENT IDSS Full Conduction │IDSS1-2/IDSS│ Mismatch at Full Conduction GATE VOLTAGE VGS(off) Pinchoff Voltage -1 -- -3.5 V VDS= 15V ID= 1nA VGS Operating Range -0.5 -- -3.5 V VDS= 15V ID= 500µA GATE CURRENT -IG Operating -- 15 50 pA VDG= 15V ID= 500µA -IG High Temperature -- -- 50 nA VDG= 15V ID= 500µA TA=+125ºC -IG Reduced VDG -- 5 30 pA VDG= 3V ID= 500µA -IGSS At Full Conduction -- -- 100 pA VGS= 15V VGS= 0 Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201144 04/07/2014 Rev#A12 ECN# LS843 LS844 LS845 SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNITS CONDITIONS -- 40 µS VDS= 15V VGS= 0 VDS= 15V ID= 200µA OUTPUT CONDUCTANCE GOSS Full Conduction -- GOS Operating -- 2.0 2.7 µS │GOS 1-2│ Differential -- 0.02 0.2 µS 90 100 -- dB VDS= 10 to 20V ID= 500µA -- 85 -- dB VDS= 5 to 10V ID= 500µA VDS= 15V VGS= 0 f= 100Hz NBW= 6Hz VDS= 15V ID= 500µA f= 1kHz COMMON MODE REJECTION CMRR CMRR -20 log │∆V GS1-2/ ∆V DS│ NOISE NF Figure -- -- 0.5 dB en Voltage -- -- 7 nV/Hz RG= 10MΩ NBW= 1Hz en Voltage -- -- 11 nV/Hz VDS= 15V ID= 500µA f= 10Hz NBW= 1Hz CAPACITANCE CISS Input -- -- 8 pF CRSS Reverse Transfer -- -- 3 pF CDD Drain-to-Drain -- 0.5 -- pF VDS= 15V ID= 500µA f= 1mHz VDD= 15V ID= 500µA f= 1mHz NOTES: 1. 2. 3. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Derate 4mW/ºC above 25ºC All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201144 04/07/2014 Rev#A12 ECN# LS843 LS844 LS845