J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS(on) ≤ 85Ω LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures SST SERIES J SERIES Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 135°C SOT-23 TOP VIEW Maximum Power Dissipation Continuous Power Dissipation 3 350mW Maximum Currents Gate Current IG = -50mA Maximum Voltages Gate to Drain Voltage VGDS = 30V Gate to Source Voltage VGSS = 30V COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP BVGSS Gate to Source Breakdown Voltage VGS(F) Gate to Source Forward Voltage -0.7 Gate Reverse Current 0.01 Gate Operating Current 0.01 Drain Cutoff Current -0.01 IGSS IG ID(off) MAX 30 UNITS V 1 CONDITIONS IG = 1µA, VDS = 0V IG = -1mA, VDS = 0V VGS = 20V, VDS = 0V nA -1 VDG = -15V, ID = -1mA VDS = -15V, VGS = 10V SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL VGS(off) IDSS rDS(on) CHARACTERISTIC Gate to Source Cutoff Voltage Drain to Source Saturation Current J/SST174 J/SST175 J/SST176 J/SST177 MIN MAX MIN MAX MIN MAX MIN MAX 5 10 3 6 1 4 0.8 2.25 V VDS = -15V, ID = -10nA -20 -195 -7 -90 -2 -55 -1.5 -30 mA VDS = -15V, VGS = 0V 300 Ω VGS = 0V, VDS = -0.1V Drain to Source On Resistance Linear Integrated Systems 85 125 • 250 UNITS CONDITIONS 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201111 05/30/13 Rev#A5 ECN#J SST174 SWITCHING CHARACTERISTICS SYMBOL td(on) tr td(off) tf CHARACTERISTIC SWITCHING CIRCUIT TYP Turn On Time 10 Turn On Rise Time 15 Turn Off Time 10 Turn Off Fall Time 20 UNITS CONDITIONS ns VGS(L) = 0V VGS(H) = 10V See Switching Circuit 1.2k VGS(H) RL VGS(L) 0.1µF RG 7.5k SWITCHING CIRCUIT PARAMETERS J/SST174 J/SST175 J/SST176 J/SST177 VDD -10V -6V -6V -6V VGG 20V 12V 8V 5V RL 560Ω 750Ω 1800Ω 5600Ω RG 100Ω 220Ω 390Ω 390Ω ID(on) -15mA -7mA -3mA -1mA 51 1.2k Scope 51 51 SOT-23 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulsed test: PW ≤ 300µS Duty Cycle: 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. 3. Derate 2.8mW/°C above 25 °C. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201111 05/30/13 Rev#A5 ECN#J SST174