3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF TO-78 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) case & substrate Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +135 °C Maximum Power Dissipation @ TA=25ºC Continuous Power Dissipation One Side 300mW Continuous Power Dissipation Both Sides 525mW Maximum Current Drain to Source2 50mA Maximum Voltages Drain to Gate2 Drain to 30V Source2 Gate to Gate 30V ±80V MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (VBS = 0V unless otherwise stated) SYMBOL gfs1 gfs2 VGS1-2 ΔVGS1 2 ΔT ΔVGS1 2 ΔT CHARACTERISTIC MIN Forward Transconductance Ratio Gate to Source Threshold Voltage Differential Gate to Source Threshold Voltage Differential with Temperature4 0.85 TYP MAX UNITS VDS = -15V, ID = -500µA, f = 1kHz 1.0 100 mV 100 μV C Gate to Source Threshold Voltage Differential with Temperature4 CONDITIONS VDS = -15V, ID = -500µA VDS = -15V, ID = -500µA TS = -55 to +25 °C VDS = -15V, ID = -500µA TS = +25 to +125 °C 100 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVDSS Drain to Source Breakdown Voltage -40 BVSDS Source to Drain Breakdown Voltage -40 Gate to Source Voltage -3.0 -6.5 -2.0 -5.0 VDS = VGS, ID = -10µA -2.0 -5.0 VDS = -15V, ID = -500µA VGS TYP MAX IS = -10µA, VBD = 0V Gate to Source Threshold Voltage IGSSR Reverse Gate Leakage Current IGSSF Forward Gate Leakage Current -10 IDSS Drain Leakage Current "Off" -200 ISDS Source to Drain Leakage Current "Off" Drain Current "On"3 IG1G2 Gate to Gate Isolation Current Linear Integrated Systems CONDITIONS ID = -10µA VGS(th) ID(on) UNITS V 10 VDS = -15V, ID = -500µA VGS = 40V pA -400 VGS = -40V VDS = -15V VSD = -15V, VDB = 0V -5.0 -30.0 mA VDS = -15V, VGS = -10V - ±1.0 µA VG1G2 = ±80V, ID = IS = 0 = mA • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201140 05/15/2014 Rev#A7 ECN# 3N190 3N191 ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC Transconductance4 MIN TYP gfs Forward gos Output Admittance 300 rds(on) 1500 MAX 4000 Drain to Source "On" Resistance 300 Crss Reverse Transfer Capacitance 1.0 Ciss Input Capacitance Output Shorted 4.5 Coss Output Capacitance Input Shorted 3.0 UNITS CONDITIONS µS VDS = -15V, ID = -5mA, f = 1kHz Ω VDS = -20V, ID = -100µA pF VDS = -15V, ID = -5mA, f = 1MHz SWITCHING CHARACTERISTICS SYMBOL CHARACTERISTIC MIN TYP MAX td(on) Turn On Delay Time 15 tr Turn On Rise Time 30 toff Turn Off Time 50 UNITS ns CONDITIONS VDD = -15V, ID(on) = -5mA, RG = RL = 1.4kΩ NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Per transistor. 3. Pulse: t = 300µs, Duty Cycle ≤ 3% 4. Measured at end points, TA and TB. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201140 05/15/2014 Rev#A7 ECN# 3N190 3N191