RENESAS M62216FP

M62216FP/GP
Low Voltage Operation STEP-UP DC/DC Converter
REJ03D0845-0300
Rev.3.00
Jun 15, 2007
Description
The M62216FP is designed as low voltage operation STEP-UP DC/DC converter.
This IC can operate very low input voltage (over 0.9 V) and low power dissipation. (circuit current is less than 850 µA)
So, this IC suitable for power supply of portable system that using low voltage battery. (DRY battery, rechargeable
battery)
Features
•
•
•
•
•
•
Pre-drive type PWM output (Pre-drive only)
Low voltage operation: VIN = 0.9 V min.
Low current dissipation: IB = 850 µA typ.
Pre-drive output current can be adjusted
Built-in ON/OFF Function: IB (OFF) = 35 µA typ.
Application for STEP-DOWN Converter can be used
Application
DC/DC Converter for portable sets of battery used
Block Diagram
ON/OFF
7
VREF
8
BIAS
1
DRIVE2
2
DRIVE1
3
PWM
Iconst
OSC
−
+ +
+
−
Amp
PWM Comp
Start
Start OSC
6
5
4
IN
FB
GND
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 1 of 11
M62216FP/GP
Pin Arrangement
M62216FP/GP
DRIVE2
1
8
BIAS
DRIVE1
2
7
ON/OFF
PWM
3
6
IN
GND
4
5
FB
(Top view)
Outline: PRSP0008DE-C [FP] (recommend)
PRSP0008DA-A (8P2S-A) [FP] (not recommend for new design)
8P2X-A [GP]
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 2 of 11
M62216FP/GP
Absolute Maximum Ratings
(Ta = 25°C, unless otherwise noted)
Item
Symbol
Ratings
15.5
Units
V
Input voltage
VIN
Bias terminal supply voltage
Drive1 terminal supply voltage
VBlAS
VDRIVE1
15.5
15.5
V
V
Drive2 terminal supply voltage
Drive1 terminal input current
VDRIVE2
IDRIVE1
15.5
100
V
mA
Drive2 terminal Input current
IDRIVE2
10
mA
Power dissipation
Operating temperature
Pd
Topr
440 (FP) 250 (GP)
−20 to +85
mW
°C
Storage temperature
Tstg
−40 to +150
°C
Conditions
Ta = 25°C
Electrical Characteristics
(Ta = 25°C, VIN = 1.7 V, VOUT = VBIAS = 3.0 V, unless otherwise noted)
Block
All device
Item
Symbol
Error
Amp.
Osc.
Output
ON/OFF
Note:
Limits
Typ
Max
Units
Test Condition
VIN
0.9

15
V
BIAS voltage setting range*
BIAS current
VBlAS
IB
1.7


850
15
1200
V
µA
BIAS current at off mode
Reference voltage
IB (OFF)
VREF

1.20
35
1.26
47
1.32
µA
V
BIAS voltage regulation of VREF
Input current
∆VREF
IIN


10
20
30

mV
nA
VBIAS = 1.7 to 15 V
IN = 1 V/IM
Open loop voltage gain
AV

70

dB
Input voltage range
1
Voltage
reference
Min
Use internal amp as
Buffer-amp
FB terminal sink current
IFB+
260
800

µA
fIN = 100 Hz, null amp
operation
IN = 1.4 V, FB = 1.25 V/IM
FB terminal source current
Oscillation frequency
IFB−
fOSC
30
95
45
125
60
155
µA
kHz
IN = 1.1 V, FB = 1.25 V/IM
PWM terminal monitored
Maximum on duty
DUTYmax
82
87
92
%
Saturation voltage between PWM
Term. and DRIVE1 Term.
Vsat1

0.25
0.5
V
PWM terminal monitored,
IN = 1.1 V
IDRIVE1 = 50 mA,
IDRIVE2 = 5 mA
Saturation voltage between PWM
Term. and DRIVE2 Term.
Leak current of DRIVE1 terminal
Vsat2

1.0
1.2
V
IL1
−1

1
µA
IN = 1.4 V
Leak current of DRIVE2 terminal
Output low voltage of PWM
terminal
IL2
VPWM (L)
−1


0.03
1
0.3
µA
V
IN = 1.4 V
IPWM = 1 mA
Input current of ON/OFF terminal
at on status
Threshold voltage of ON/OFF
terminal
ION

2
3
µA
VTH (ON)

0.65
0.75
V
1. Setting range of BlAS voltage as same as setting range of output voltage.
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 3 of 11
M62216FP/GP
Application Circuit
(1) Standard application circuit
VIN
CIN
L
+
VOUT
Di
+
7
ON/OFF
BIAS
8
DRIVE2
1
DRIVE1
2
PWM
3
Co
RD2
RD1
IN
FB
GND
6
5
4
VIN : 0.9~14 V
VOUT : 1.7~15 V
(VOUT > VIN)
R1
Tr
R2
(2) Application circuit 1 (VIN ≥ 1.7 V)
VIN
CIN
L
+
VOUT
Di
+
7
ON/OFF
BIAS
8
DRIVE2
1
DRIVE1
2
PWM
3
RD2
RD1
IN
FB
GND
6
5
4
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 4 of 11
R1
Tr
R2
Co
VIN : 1.7~14 V
VOUT : 2.5~15 V
(VOUT > VIN)
M62216FP/GP
(3) Application circuit 2 (VOUT > 15 V)
L
VIN
CIN
Di
VOUT
+
+
7
ON/OFF
BIAS
Co
8
RD2
DRIVE2 1
RD1
R1
DRIVE1 2
VIN : 1.7~15 V
VOUT : 15 V~
(VOUT > VIN)
Tr
IN
FB
GND
6
5
4
PWM
3
R2
(4) Application circuit for STEP-DOWN circuit
VIN
Tr
CIN +
VOUT
L
7
+
Di
ON/OFF
Co
BIAS 8
RD2
DRIVE2 1
DRIVE1 2
IN
FB
GND
6
5
4
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 5 of 11
RD1
R1
PWM 3
R2
VIN : 2.0~15 V
VOUT : 1.7~14 V
(VOUT < VIN)
M62216FP/GP
Typical Characteristics
BIAS Current vs. BIAS Voltage
(Ta = 25°C)
Thermal Derating
(Absolute Maximum Rating)
1.6
500
BIAS Current IB (mA)
Power Dissipation Pd (mW)
600
FP
400
300
GP
200
100
1.0
0.8
0.4
0
25
50
75
100
125
0
150
2
4
6
8
10
12 14
Ambient Temperature Ta (°C)
BIAS Voltage VBIAS (V)
BIAS Current vs.
Ambient Temperature
OFF State BIAS Current vs.
BIAS Voltage (ON/OFF = GND)
80
1.6
VBIAS = 1.7 V
VBIAS = 3.0 V
VBIAS = 15 V
1.4
OFF State BIAS Current
IB (OFF) (µA)
BIAS Current IB (mA)
1.2
0.6
0
1.2
1.0
0.8
0.6
0.4
−40 −20
60
40
20
0
0
20
40
60
80
100
0
2
4
6
8
10
12
14
BIAS Voltage VBIAS (V)
Open Loop Gain vs. Input Frequency
(Vin = 0.1 Vrms, Null Amp, Ta = 25°C)
FB Voltage vs. FB Sink Current
(VBIAS = 3.0 V, IN = 1.4 V)
FB Voltage VFB (V)
60
40
1.00
0.75
0.50
0.25
Ta = −20°C
Ta = +25°C
Ta = +85°C
0
0.1
1
16
1.25
VBIAS = 1.7 V
VBIAS = 3.0 V
VBIAS = 15 V
80
20
0.01
16
Ta = −20°C
Ta = +25°C
Ta = +85°C
Ambient Temperature Ta (°C)
100
Open Loop Gain AV (dB)
1.4
10
Input Frequency fin (kHz)
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 6 of 11
100
0
0.2
0.4
0.6
0.8
1.0
1.2
FB Sink Current IFB+ (mA)
1.4
M62216FP/GP
Oscillating Frequency vs.
BIAS Voltage
(PWM Terminal Monitored, Ta = 25°C)
FB Source Current vs. FB Voltage
(VBIAS = 3.0 V, IN = 1.1 V)
Oscillating Frequency fOSC (kHz)
50
40
30
20
Ta = −20°C
Ta = +25°C
Ta = +85°C
10
0
0.5
1.0
1.5
2.0
2.5
140
120
100
80
0
2
4
6
8
10
12 14
16
FB Voltage VFB (V)
BIAS Voltage VBIAS (V)
Oscillating Frequency vs.
Ambient Temperature
(PWM Terminal Monitored, IN = 1.1 V)
Max ON Duty vs. BIAS Voltage
(PWM Terminal Monitored, IN = 1.1 V, Ta = 25°C)
100
160
VBIAS = 1.7 V
VBIAS = 3.0 V
VBIAS = 15 V
140
120
100
80
−40 −20
95
90
85
80
75
0
20
40
60
80
100
0
2
4
6
8
10
12
14
16
Ambient Temperature Ta (°C)
BIAS Voltage VBIAS (V)
Max ON Duty vs. Ambient Temperature
(PWM Terminal Monitored, IN = 1.1 V)
Saturation Voltage Between PWM-DRIVE1
Terminal vs. Input Current of DRIVE1 Terminal
(IDRIVE2 = 5 mA, IN = 1.1 V, Ta = 25°C)
100
Max ON Duty DUTYmax (%)
160
3.0
Max ON Duty DUTYmax (%)
Oscillating Frequency fOSC (kHz)
0
VBIAS = 1.7 V
VBIAS = 3.0 V
VBIAS = 15 V
95
90
85
80
75
−40 −20
Saturation Voltage Between
PWM-DRIVE1 Terminal Vsat1 (V)
FB Source Current IFB− (µA)
60
1.0
VBIAS = 1.7 V
VBIAS = 3.0 V
VBIAS = 9.0 V
VBIAS = 15 V
0.8
0.6
0.4
0.2
0
0
20
40
60
80
Ambient Temperature Ta (°C)
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 7 of 11
100
0
10
20
30
40
50
60
70
Input Current of DRIVE1 Terminal
IDRIVE1 (mA)
M62216FP/GP
Saturation Voltage Between PWM-DRIVE1
Terminal vs. Input Current of DRIVE1 Terminal
(VBIAS = 3.0 V, IN = 1.1 V, Ta = 25°C)
Saturation Voltage Between PWM-DRIVE2
Terminal vs. Input Current of DRIVE2 Terminal
(IN = 1.1 V, Ta = 25°C)
1.7
0.4
0.3
0.2
IDRIVE2 = 2 mA
IDRIVE2 = 5 mA
IDRIVE2 = 10 mA
0.1
0
40
60
80
100
120
1.5
1.3
1.1
0.9
0.7
0
2
4
6
8
10
12
Input Current of DRIVE2 Terminal
IDRIVE2 (mA)
PWM Output Low Voltage
vs. PWM Sink Current
(VBIAS = 3.0 V, IN = 1.4 V)
Input ON Current vs.
Ambient Temperature
4.0
0.5
0.4
0.3
0.2
Ta = −20°C
Ta = +25°C
Ta = +85°C
0.1
0
0
2
4
6
8
10
3.0
2.0
1.0
VBIAS = VON = 1.7 V
VBIAS = VON = 3.0 V
VBIAS = VON = 15 V
0
−40 −20
12
0
20
40
60
80
100
PWM Sink Current (mA)
Ambient Temperature Ta (°C)
Threshold Voltage of ON/OFF Terminal
vs. Ambient Temperature (VBIAS = 3.0 V)
Max Load Current for START-UP(*1)
vs. Input Voltage
(Standard Application Circuit, VO = 3.0 V, Ta = 25°C)
200
Max Load Current for START-UP
IOmax (mA)
1.0
Threshold Voltage of ON/OFF
Terminal VTH (ON) (V)
VBIAS = 1.7 V, IDRIVE1 = 20 mA
VBIAS = 3.0 V, IDRIVE1 = 50 mA
VBIAS = 15 V, IDRIVE1 = 40 mA
Input Current of DRIVE1 Terminal
IDRIVE1 (mA)
0.6
PWM Output Low Voltage
VPWM (L) (V)
20
Input ON Current (µA)
0
Saturation Voltage Between
PWM-DRIVE2 Terminal Vsat2 (V)
Saturation Voltage Between
PWM-DRIVE1 Terminal Vsat1 (V)
0.5
0.8
0.6
0.4
0.2
0
−40 −20
0
20
40
60
80
Ambient Temperature Ta (°C)
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 8 of 11
100
175
150
Tr: 2SC3052-F, L: 68 µH,
RD1: 680 Ω, RD2: 1.6 kΩ
Tr: 2SC3439-H, L: 22 µH,
RD1: 1.3 kΩ, RD2: 3.3 kΩ
125
100
75
50
25
0
0.8
1.0
1.2
1.4
Input Voltage VIN (V)
1.6
M62216FP/GP
Efficiency vs. Load Current
(Standard Application circuit:
VIN = 1.5 V, VO = 3.0 V, Ta = 25°C)
Max Load Current for START-UP (*2)
vs. Input Voltage
(Application circuit1: VO = 5.0 V, Ta = 25°C)
200
Max Load Current for START-UP
IOSTmax (mA)
100
Efficiency (%)
80
60
40
Tr: 2SC3052-F
Tr: 2SC3439-H
20
0
1
10
100
1000
Load Current IO (mA)
175
150
125
100
Tr: 2SC3052-F, L: 150 µH,
RD1: 750 Ω, RD2: 3.6 kΩ
Tr: 2SC3439-H, L: 22 µH,
RD1: 1.3 kΩ, RD2: 6.8 kΩ
75
50
25
0
1.5
2.0
2.5
3.0
3.5
4.0
Input Voltage VIN (V)
Efficiency vs. Load Current
(Application circuit1:
VIN = 3.0 V, VO = 5.0 V, Ta = 25°C)
100
Efficiency (%)
80
60
40
Tr: 2SC3052-F
Tr: 2SC3439-H
20
0
1
10
100
1000
Load Current IO (mA)
Notes:
1, 2. These characteristics show the maximum output load current when start-up.
Therefore, output voltage can grown-up to setting voltage less than a curve in the graph when
using these external components value.
(2SC3052-F: hFE = 250 to 500, 2SC3439-H: hFE = 600 to 1200)
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 9 of 11
M62216FP/GP
Equation for Constants Calculation
Constants
Standard Application Circuit
Application Circuit 1
Application Circuit 2
VO + VF − VIN
VIN − VCE (sat)
1
fOSC
VO + VF − VIN
VIN − VCE (sat)
1
fOSC
VO + VF − VIN
VIN − VCE (sat)
1
fOSC
TOFF (MIN)
TON + TOFF
T
1 + ON
TOFF
TON + TOFF
T
1 + ON
TOFF
TON + TOFF
T
1 + ON
TOFF
TON (MAX)
1
− TOFF (MIN)
fOSC
1
− TOFF (MIN)
fOSC
1
− TOFF (MIN)
fOSC
TON
TOFF
TON + TOFF
lpk
L (MIN)
R1
2× 1+
TON
× (lO + lB)
TOFF
(VIN − VCE (sat))2 × TON (MAX)2 × fOSC
2 × VO × (lO + lB)
VO
− 1 × R2
VREF
2× 1+
TON
× lO
TOFF
(VIN − VCE (sat))2 × TON (MAX)2 × fOSC
2 × VO × lO
VO
− 1 × R2
VREF
2× 1+
TON
× lO
TOFF
(VIN − VCE (sat))2 × TON (MAX)2 × fOSC
2 × VO × l O
VO
− 1 × R2
VREF
RD1
VO − (VBE + Vsat1)
(lpk/hFE) × A1
VO− (VBE + Vsat1)
(lpk/hFE) × A1
VIN − (VBE + Vsat1)
(lpk/hFE) × A1
RD2
VO − (VBE + Vsat2)
(lpk/hFE) × A2
VO − (VBE + Vsat2)
(lpk/hFE) × A2
VIN − (VBE + Vsat2)
(lpk/hFE) × A2
Constants
TON
TOFF
TON + TOFF
TOFF (MIN)
TON (MAX)
lpk
L (MIN)
R1
STEP-DOWN Circuit
VO + V F
VIN − VCE (sat) − VO
1
fOSC
TON + TOFF
T
1 + ON
TOFF
1
− TOFF (MIN)
fOSC
2 × lO
(VIN − VCE (sat) − VO) × TON (MAX)
∆lO
VO
− 1 × R2
VREF
RD1
VO − VBE − Vsat1
lpk/hFE
RD2
VIN − Vsat2
(lpk/hFE) × A3
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 10 of 11
Note:
VF: Forward voltage of external diode.
VCE (sat): Saturation voltage of external transistor.
VBE: Voltage between Base - Emitter of external transistor.
hFE: hFE of external transistor at saturating.
A1: Ratio of current into DRIVE1 terminal.
(A1 = 0.8~0.9)
A2: Ratio of current into DRIVE2 terminal.
(A2 = 1 − A1)
A3: Ratio of current into DRIVE2 terminal.
(A3 = 0.1~0.2)
• Set R2 to several kΩ ~ several 10ths kΩ.
• Set current into DRIVE2 terminal more than 100 µA.
(Ipk / hFE) × A2 ≥ 100 µA, (Ipk / hFE) × A3 ≥ 100 µA
• Set ∆IO to 1/5 ~ 1/3 of maximum load current
• The maximum rating of current of external parts (transistor,
diode and inductor) are 1.5 to 2 times of Ipk.
M62216FP/GP
Package Dimensions
JEITA Package Code
P-SOP8-4.4x4.85-1.27
RENESAS Code
PRSP0008DE-C
*1
Previous Code
—
MASS[Typ.]
0.1g
F
D
8
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
5
c
*2
E
HE
bp
Index mark
Terminal cross section
( Ni/Pd/Au plating )
Reference
Symbol
4
1
*3
e
Z
bp
x
M
A
A2
L1
A1
θ
L
y
Detail F
JEITA Package Code
P-SOP8-4.4x5-1.27
RENESAS Code
PRSP0008DA-A
Min Nom Max
4.65 4.85 5.05
4.2
4.4 4.6
1.85
0.00 0.1 0.20
2.03
0.34 0.4 0.46
0.15 0.20 0.25
0°
8°
5.7 6.2 6.5
1.12 1.27 1.42
0.12
0.10
0.75
0.25 0.45 0.65
0.90
MASS[Typ.]
0.07g
E
5
*1
HE
8
Previous Code
8P2S-A
D
E
A2
A1
A
bp
b1
c
c1
θ
HE
e
x
y
Z
L
L1
Dimension in Millimeters
F
1
NOTE)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
4
Index mark
c
A2
*2
A1
D
L
A
Reference
Symbol
*3
e
bp
y
D
E
A2
A1
A
bp
c
Detail F
HE
e
y
L
REJ03D0845-0300 Rev.3.00 Jun 15, 2007
Page 11 of 11
Dimension in Millimeters
Min Nom Max
4.8 5.0 5.2
4.2 4.4 4.6
1.5
0.05
1.9
0.35 0.4 0.5
0.13 0.15 0.2
0°
10°
5.9 6.2 6.5
1.12 1.27 1.42
0.1
0.2 0.4 0.6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
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