2SA836 Silicon PNP Epitaxial REJ03G0629-0200 (Previous ADE-208-316) Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 200 150 –55 to +150 Unit V V V mA mA mW °C °C 2SA836 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure V(BR)CEO Note: V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF Min –55 –55 Typ — — Max — — Unit V V –5 — — 160 — — — — — — — — — — –0.1 –0.66 200 2.0 1 0.5 — –100 –50 500 –0.5 –0.75 — — 5 1 V nA nA 1. The 2SA836 is grouped by hFE as follows. C D 160 to 320 250 to 500 Rev.2.00 Aug 10, 2005 page 2 of 5 V V MHz pF dB dB Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCE = –12 V, IE = –2 mA VCB = –10 V, IE = 0, f = 1MHz VCE = –6 V, f = 10 Hz IC = –0.1mA, Rg = 10 kΩ f = 1 kHz 2SA836 Main Characteristics Typical Output Characteristics –10 300 Collector Current IC (mA) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 200 100 –30 –25 –8 –20 –6 –15 –4 –10 –5 µA –2 IB = 0 0 50 100 150 0 Ambient Temperature Ta (°C) –2 DC current transfer ratio hFE Collector Current IC (A) –2 m –1 m –500 µ –200 µ –100 µ –50 µ VCE = –12 V 1,000 100 10 –10 µ 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 10 5 2 –50 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 3 of 5 50 k 20 k 10 k f = 10 Hz dB 10 dB 9 dB 8 dB 7 20 –20 –10 m 100 k B dB 6 B 4d d dB 5 3 dB 2 dB 1 f = 1 MHz IE = 0 –10 –1 m Contours of Constant Noise Figure (1) Signal source resistance Rg (Ω) 50 –5 –100 µ Collector Current IC (A) Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) –10 10,000 –20 m –10 m –5 m –2 –8 DC Current Transfer Ratio vs. Collector Current –100 m –50 m VCE = –12 V 1 –1 –6 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics –20 µ –10 µ –4 5k 2k 1k 500 200 –0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Collector Current IC (mA) –50 m 2SA836 Signal source resistance Rg (Ω) Contours of Constant Noise Figure (2) 100 k 1 50 k 20 k 10 k f = 1 kHz 2 dB dB 9 3 4 dB dB 1 dB 0 d B 5 6d dB B 7 8d dB B 5k 2k 1k 500 200 –0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 5 –5 –10 2SA836 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA836CTZ 2SA836DTZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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