HFB25HJ20

PD-94150C
HFB25HJ20
Ultrafast, Soft Recovery Diode
FRED
Features
•
•
•
•
•
•
VR = 200V
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
IF(AV) = 25A
trr = 35ns
ESD Rating: Class NS per MIL-STD-750, Method 1020
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameter
VR
IF(AV)
IFSM
PD @ TC = 25°C
TJ, TSTG
Cathode to Anode Voltage
Continuous Forward Current,  TC = 106°C
Single Pulse Forward Current, ‚ TC = 25°C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Max.
Units
200
25
150
70
-55 to +150
V
A
W
°C
Note:  D.C. = 50% rect. wave
‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
CASE STYLE
SMD-0.5
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CATHODE
ANODE
ANODE
1
10/31/12
HFB25HJ20
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
VF
Min. Typ. Max. Units
—
—
—
1.18
V
Test Conditions
Cathode Anode Breakdown Voltage
Forward Voltage
200
—
IR = 100µA
IF = 25A, TJ =-55°C
See Fig. 1
—
—
0.94
—
—
1.07
—
—
1.19
IF = 50A, TJ = 25°C
—
—
0.88
IF = 25A, TJ =125°C
IF = 10A, TJ = 25°C
V
IF = 25A, TJ = 25°C
See Fig. 2
IR
Reverse Leakage Current
See Fig. 2
—
—
—
—
10
250
µA
µA
VR = VR Rated
VR = VR Rated, TJ = 125°C
CT
Junction Capacitance, See Fig. 3
—
—
78
pF
V R = 200V
LS
Series Inductance
—
4.8
—
nH
Measured from center of cathod
pad to center of anode pad
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Q rr1
Q rr2
di(rec)M/dt1
di(rec)M/dt2
Min.
Reverse Recovery Time
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During tb
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—
28
43
3.9
6.1
61
146
820
1560
35
—
—
—
—
—
—
—
—
Test Conditions
ns
ns
IF = 1.0A,VR = 30V, dif/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C
5
IF = 25A
TJ = 25°C See Fig.
A
A
TJ = 125°C
6
VR = 160V
TJ = 25°C See Fig.
nC
nC
TJ = 125°C
7
dif/dt = 200A/µs
TJ = 25°C See Fig.
A/µs
8
A/µs TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
RthJC
Wt
2
Junction-to-Case
Weight
Typ.
Max.
Units
—
1.0
1.76
—
°C/W
g
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HFB25HJ20
100
10
Reverse Current - I R (µA)
100°C
75°C
0.1
0.01
25°C
0.001
0.0001
0
40
80
120
160
200
Reverse Voltage - V R (V)
10
Fig. 2 - Typical Reverse Current Vs.
Reverse Voltage
1000
Tj = 125°C
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
125°C
1
Tj = 25°C
Tj = -55°C
T J = 25°C
100
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
Forward Voltage Drop - V F (V)
0
40
80
120
160
200
Reverse Voltage - V R (V)
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Thermal Response ( Z thJC )
10
D = 0.50
1
0.20
P DM
0.10
0.05
0.1
t1
0.02
0.01
t2
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
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Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
3
HFB25HJ20
50
100
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 25A
IRRM - ( A )
trr - ( ns )
40
IF = 12.5A
IF = 25A
30
IF = 50A
IF = 50A
IF = 12.5A
10
VR = 160V
TJ = 125°C
TJ = 25°C
20
1
100
1000
100
1000
dif / dt - ( A / µs )
dif / dt - ( A / µs )
Fig. 5 - Typical Reverse Recovery Vs. dif/dt,
1000
Fig. 6 - Typical Recovery Current Vs. dif/dt,
10000
IF = 12.5A
IF = 25A
di ( rec )M / dt - ( A / µs )
IF = 25A
IF = 50A
Qrr - ( nC )
IF = 12.5A
100
VR = 160V
IF = 50A
1000
VR = 160V
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
10
100
100
1000
dif / dt - ( A / µs )
Fig. 7 - Typical Stored Charge Vs. dif/dt
4
100
1000
dif / dt - ( A / µs )
Fig. 8 - Typical di(rec)M/dt Vs. dif/dt
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HFB25HJ20
3
trr
IF
tb
ta
0
REVERSE RECOVERY CIRCUIT
2
VR = 200V
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
0.01 Ω
L = 70µH
1
D.U.T.
dif/dt
ADJUST
D
G
5
0.75 I RRM
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Case Outline and Dimensions — SMD-0.5
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2012
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