IRF7389PbF-1 Product Datasheet

IRF7389PbF-1
VDS
RDS(on) max
(@VGS = 10V)
Q g (typical)
ID
(@TA = 25°C)
HEXFET® Power MOSFET
N-CH
30
P-CH
-30
V
0.029
0.058
Ω
22
23
nC
7.3
-5.3
A
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
SO-8
P-CHANNEL MOSFET
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7389PbF-1
SO-8
⇒
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation …
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
V DS
VGS
ID
IDM
IS
IRF7389PbF-1
IRF7389TRPbF-1
Maximum
P-Channel
N-Channel
30
-30
± 20
7.3
5.9
30
2.5
-5.3
-4.2
-30
-2.5
2.5
1.6
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Orderable Part Number
82
4.0
Units
V
A
W
140
-2.8
0.20
mJ
A
mJ
V/ ns
3.8
-2.2
-55 to + 150 °C
Symbol
Limit
Units
RθJA
50
°C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
1
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IRF7389PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
30
-30
—
—
—
—
—
—
1.0
-1.0
—
—
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ. Max.
—
—
—
—
0.022 —
0.022 —
0.023 0.029
0.032 0.046
0.042 0.058
0.076 0.098
—
—
—
—
14
—
7.7 —
— 1.0
— -1.0
—
25
— -25
— ±100
22
33
23
34
2.6 3.9
3.8 5.7
6.4 9.6
5.9 8.9
8.1 12
13
19
8.9 13
13
20
26
39
34
51
17
26
32
48
650 —
710 —
320 —
380 —
130 —
180 —
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A „
VGS = 4.5V, ID = 4.7A „
VGS = -10V, ID = -4.9A „
VGS = -4.5V, ID = -3.6A „
VDS = VGS, I D = 250µA
VDS = VGS, I D = -250µA
VDS = 15V, I D = 5.8A „
„
VDS = -15V, I D = -4.9A
VDS = 24V, V GS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, T J = 55°C
VDS = -24V, V GS = 0V, TJ = 55°C
VGS = ±20V
N-Channel
I D = 5.8A, VDS = 15V, VGS = 10V
P-Channel
I D = -4.9A, V DS = -15V, VGS = -10V
N-Channel
VDD = 15V, ID = 1.0A, RG = 6.0Ω,
RD = 15Ω
P-Channel
VDD = -15V, ID = -1.0A, RG = 6.0Ω,
RD = 15Ω
„
„
N-Channel
V GS = 0V, V DS = 25V, ƒ = 1.0MHz
P-Channel
V GS = 0V, V DS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 2.5
—
— -2.5
A
—
—
30
—
— -30
— 0.78 1.0
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
V
— -0.78 -1.0
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
—
45
68
N-Channel
ns
—
44
66
TJ = 25°C, I F =1.7A, di/dt = 100A/µs
P-Channel
„
—
58
87
nC
TJ = 25°C, I F = -1.7A, di/dt = 100A/µs
—
42
63
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
… Surface mounted on FR-4 board, t ≤ 10sec.
‚ N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel I SD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
2
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IRF7389PbF-1
N-Channel
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
3.0V
20μs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
VDS = 10V
20μs PULSE WIDTH
1
3.0
3.5
4.0
4.5
Fig 3. Typical Transfer Characteristics
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A
5.0
VGS , Gate-to-Source Voltage (V)
3
1
VDS, Drain-to-Source Voltage (V)
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
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A
1.6
May 15, 2014
IRF7389PbF-1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
N-Channel
ID = 5.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
0.040
0.032
0.028
0.024
0
0.08
0.06
I D = 5.8A
0.04
0.02
0.00
12
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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15
A
E AS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.10
9
20
30
40
A
Fig 6. Typical On-Resistance Vs. Drain
Current
0.12
6
10
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
3
V GS = 10V
0.020
TJ , Junction Temperature ( °C)
0
V GS = 4.5V
0.036
200
TOP
BOTTOM
160
ID
D
1.8A
3.2A
4.0A
120
80
40
0
25
50
75
100
125
Starting T J , Junction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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A
150
May 15, 2014
IRF7389PbF-1
N-Channel
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
900
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1200
Ciss
Coss
600
Crss
300
0
1
10
100
A
ID = 5.8A
VDS = 15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRF7389PbF-1
P-Channel
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
-3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20μs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
Fig 12. Typical Output Characteristics
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
10
Fig 13. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20μs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
6
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
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A
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
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A
1.4
May 15, 2014
IRF7389PbF-1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS(on) , Drain-to-Source On Resistance ( Ω )
P-Channel
ID = 4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.6
0.5
0.4
0.3
0.1
0
10
20
Fig 17. Typical On-Resistance Vs. Drain
Current
300
0.12
I D = -4.9A
0.04
0.00
0
3
6
9
12
15
-VGS , Gate -to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
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A
EAS , Single Pulse Avalanche Energy (mJ)
0.16
0.08
30
-ID , Drain Current (A)
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
VGS = -10V
0.0
80 100 120 140 160
TJ , Junction Temperature ( ° C)
7
V GS = -4.5V
0.2
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
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A
IRF7389PbF-1
P-Channel
VGS = 0V
Ciss = Cgs + Cgd + Cds
Crss = Cgd
1200
20
f = 1 MHz
SHORTED
-VGS , Gate-to-Source Voltage (V)
1400
C, Capacitance (pF)
Coss = Cds + Cgd
1000
Ciss
800
Coss
600
Crss
400
200
0
1
10
100
A
ID = -4.9A
VDS =-15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
- V DS , Drain-to-Source Voltage (V)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7389PbF-1
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
0.25
e
e1
.0098
0.10
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BAS IC
0.25 [.010]
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
MAX
b
e1
6X
MILLIMET ERS
MAX
A
5
INCHES
MIN
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRF7389PbF-1
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
Moisture Sensitivity Level
(per JE DEC JE S D47F
SO-8
††
guidelines)
MS L1
††
(per JE DE C J-S TD-020D )
RoHS compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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