PD - 96312 IRF9362PbF HEXFET® Power MOSFET VDS -30 V 21.0 mΩ 32.0 mΩ Qg (typical) 13 nC ID -8.0 A RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRF9362PbF IRF9362TRPbF SO8 SO8 Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier ⇒ Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage -30 VGS Gate-to-Source Voltage ±20 ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -6.4 Pulsed Drain Current -64 IDM PD @TA = 25°C PD @TA = 70°C f Power Dissipation f c Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range 2.0 1.3 0.016 -55 to + 150 Units V A W W/°C °C Notes through are on page 2 www.irf.com 1 06/25/10 IRF9362PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Min. Typ. Max. Units -30 ––– ––– 0.021 ––– ––– V V/°C ––– 17.0 21.0 ––– 25.7 32.0 mΩ VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ∆VGS(th) IDSS Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 Forward Transconductance 12 ––– ––– S Total Gate Charge ––– 13 ––– nC ––– 26 39 ––– ––– 3.8 6.3 ––– ––– nC Ω IGSS gfs Qg Qg Qgs Qgd h Total Gate Charge h h h Gate-to-Source Charge Gate-to-Drain Charge h µA nA Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -8.0A e e VGS = -4.5V, ID = -6.4A VDS = VGS, ID = -25µA VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VDS = -10V, ID = -6.4A VDS = -15V, VGS = -4.5V, ID = - 6.4A VGS = -10V VDS = -15V ID = -6.4A RG Gate Resistance ––– 17 ––– td(on) Turn-On Delay Time ––– 5.2 ––– VDD = -30V, VGS = -10V tr Rise Time ––– 5.9 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 115 ––– tf Fall Time ––– 53 ––– Ciss Input Capacitance ––– 1300 ––– Coss Output Capacitance ––– 250 ––– Crss Reverse Transfer Capacitance ––– 170 ––– ns e RG = 6.0Ω See Figs. 19a & 19b VGS = 0V pF VDS = -25V ƒ = 1.0kHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current c Diode Characteristics Parameter IS Min. Continuous Source Current (Body Diode) ISM d Typ. Typ. Max. Units ––– ––– 94 -6.4 mJ A Max. ––– ––– -2.0 ––– ––– -64 ––– ––– -1.2 Units A Pulsed Source Current c (Body Diode) Conditions MOSFET symbol D showing the integral reverse G p-n junction diode. S e VSD Diode Forward Voltage trr Reverse Recovery Time ––– 32 48 ns TJ = 25°C, IF = -2.0A, VDD = -24V Qrr Reverse Recovery Charge ––– 20 30 nC di/dt = 100/µs V TJ = 25°C, IS = -2.0A, VGS = 0V Thermal Resistance Parameter RθJL Junction-to-Drain Lead RθJA Junction-to-Ambient f g Typ. Max. ––– 20 ––– 62.5 e Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 4.6mH, RG = 25Ω, IAS = -6.4A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9362PbF 100 100 10 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V 1 -2.5V 0.1 ≤60µs PULSE WIDTH 10 BOTTOM -2.5V 1 ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.01 0.1 0.1 1 10 100 0.1 -V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) 1 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 T J = 150°C TJ = 25°C 1 VDS = -15V ≤60µs PULSE WIDTH 0.1 ID = -8.0A VGS = -10V 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -V GS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 KHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd -V GS, Gate-to-Source Voltage (V) ID= -6.4A C oss = C ds + C gd C, Capacitance (pF) VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V Ciss 1000 Coss Crss 12.0 VDS= -24V VDS= -15V 10.0 VDS= -6.0V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 10 20 30 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRF9362PbF 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C 10 T J = 25°C 100µsec 1msec 10msec 10 DC 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.01 -VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 Fig 8. Maximum Safe Operating Area 2.2 -V GS(th), Gate threshold Voltage (V) 8 -I D, Drain Current (A) 0.1 -VDS, Drain-to-Source Voltage (V) 6 4 2 2.0 1.8 1.6 ID = -25µA 1.4 1.2 1.0 0.8 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T A , Ambient Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature 100 Thermal Response ( Z thJA ) °C/W D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com 60 RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) IRF9362PbF ID = -8.0A 50 40 30 T J = 125°C 20 T J = 25°C 10 0 2 4 6 8 10 12 14 16 18 70 60 Vgs = -4.5V 50 40 30 20 Vgs = -10V 10 0 20 0 10 20 30 40 -V GS, Gate -to -Source Voltage (V) 60 70 Fig 13. Typical On-Resistance vs. Drain Current 1000 400 ID TOP -1.8A -2.6A BOTTOM -6.4A 800 Single Pulse Power (W) 300 200 100 600 400 200 0 25 50 75 100 125 0 1E-5 150 1E-4 Starting T J , Junction Temperature (°C) D.U.T * 1E-2 Driver Gate Drive + - D.U.T. ISD Waveform Reverse Recovery Current + di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode www.irf.com VDD Forward Drop Inductor Current Inductor Curent Ripple ≤ 5% Reverse Polarity of D.U.T for P-Channel P.W. Period * • • • • 1E+0 VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period P.W. - 1E-1 Fig 15. Typical Power vs. Time + RG 1E-3 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current * 50 -I D, Drain Current (A) Fig 12. On-Resistance vs. Gate Voltage EAS , Single Pulse Avalanche Energy (mJ) 80 ISD * VGS = 5V for Logic Level Devices Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 IRF9362PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 17a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 17b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 18b. Unclamped Inductive Waveforms Fig 18a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. - + 10% V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 19a. Switching Time Test Circuit 6 tr 90% VDS Fig 19b. Switching Time Waveforms www.irf.com IRF9362PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 6X e e1 8X b 0.25 [.010] A MAX 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] A1 MILLIMETERS MAX A 5 INCHES MIN 8X L 8X c 7 C A B FOOT PRINT NOT ES : 8X 0.72 [.028] 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9362PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. † Qualification Information Consumer †† Qualification level Moisture Sensitivity Level RoHS Compliant (per JEDEC JESD47F††† guidelines) MSL1 SO-8 (per JEDEC J-STD-020D†††) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/2010 8 www.irf.com