IRF IRF7835PBF

PD - 97068
IRF7835PbF
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
VDSS
RDS(on) max
Qg
30V
4.5m:@VGS = 10V
22nC
Benefits
l Very Low Qrr
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
30
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
19
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
15
IDM
Pulsed Drain Current
150
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
1.6
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
c
A
W
W/°C
°C
0.02
-55 to + 155
Thermal Resistance
Parameter
RθJL
RθJA
g
Junction-to-Ambient fg
Junction-to-Drain Lead
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes  through … are on page 9
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1
1/5/06
IRF7835PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.023
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.6
4.5
mΩ
–––
4.5
5.7
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-6.0
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 24V, VGS = 0V
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
81
–––
–––
Qg
e
= 15A e
VGS = 10V, ID = 19A
VGS = 4.5V, ID
VDS = VGS, ID = 50µA
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
S
VDS = 15V, ID = 15A
Total Gate Charge
–––
22
33
Qgs1
Pre-Vth Gate-to-Source Charge
–––
5.5
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.1
–––
Qgd
Gate-to-Drain Charge
–––
7.2
–––
ID = 15A
Qgodr
See Fig. 16
VDS = 15V
nC
VGS = 4.5V
Gate Charge Overdrive
–––
7.2
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
9.3
–––
Qoss
Output Charge
–––
14
–––
nC
RG
Gate Resistance
–––
1.0
1.7
Ω
td(on)
Turn-On Delay Time
–––
9.6
–––
VDD = 15V, VGS = 4.5V
tr
Rise Time
–––
13
–––
ID = 15A
td(off)
Turn-Off Delay Time
–––
14
–––
tf
Fall Time
–––
4.6
–––
Ciss
Input Capacitance
–––
2960
–––
Coss
Output Capacitance
–––
610
–––
Crss
Reverse Transfer Capacitance
–––
270
–––
ns
VDS = 16V, VGS = 0V
Clamped Inductive Load
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
240
mJ
–––
15
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
–––
3.1
–––
–––
150
integral reverse
(Body Diode)
ISM
(Body Diode)
c
D
MOSFET symbol
A
Pulsed Source Current
Conditions
–––
showing the
G
S
VSD
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 15A, VGS = 0V
trr
Reverse Recovery Time
–––
16
24
ns
TJ = 25°C, IF = 15A, VDD = 15V
Qrr
Reverse Recovery Charge
–––
21
32
nC
di/dt = 320A/µs
ton
Forward Turn-On Time
2
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7835PbF
1000
1000
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
0.1
≤ 60µs PULSE WIDTH
Tj = 25°C
2.3V
100
BOTTOM
10
≤ 60µs PULSE WIDTH
Tj = 150°C
2.3V
0.01
1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
TJ = 150°C
10
1
TJ = 25°C
0.1
VDS = 15V
≤ 60µs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
ID = 15A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7835PbF
100000
12
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance (pF)
Coss = Cds + Cgd
10000
Ciss
1000
Coss
Crss
ID= 15A
VDS = 25V
10
VDS= 16V
VDS= 7.6V
8
6
4
2
0
100
1
10
0
100
10
VDS , Drain-to-Source Voltage (V)
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
Qg, Total Gate Charge (nC)
1.2
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec 100µsec
10
10msec
1
0.1
100msec
TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7835PbF
2.2
VGS(th) Gate threshold Voltage (V)
20
ID , Drain Current (A)
16
12
8
4
2.0
1.8
ID = 50µA
1.6
1.4
1.2
1.0
0.8
0
25
50
75
100
125
-75
150
-50
-25
0
25
50
75
100
125
150
TJ, Temperature ( °C )
TC, CaseTemperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
10
1
0.1
τJ
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci= τi/Ri
τ
τι (sec)
5.599447 0.010553
27.35936 1.1984
17.0458
44.7
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Ri (°C/W)
τC
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS (on), Drain-to -Source On Resistance (mΩ)
IRF7835PbF
16
EAS, Single Pulse Avalanche Energy (mJ)
500
ID = 15A
12
8
TJ = 125°C
4
TJ = 25°C
0
2.0
4.0
6.0
8.0
10.0
ID
1.4A
1.8A
BOTTOM 15A
TOP
400
300
200
100
0
25
VGS, Gate-to-Source Voltage (V)
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
tp
A
0.01Ω
I AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
LD
VDS
+
VDS
90%
VDD D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
10%
VGS
td(on)
Fig 15a. Switching Time Test Circuit
6
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRF7835PbF
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
12V
.3µF
+
V
- DS
D.U.T.
Vgs(th)
VGS
3mA
IG
ID
Qgs1 Qgs2
Current Sampling Resistors
Driver Gate Drive
P.W.
+
ƒ
+
‚
„
Reverse
Recovery
Current
VDD
P.W.
Period
D.U.T. ISD Waveform
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
*

•
•
•
•
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
RG
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
D.U.T
Qgd
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRF7835PbF
SO-8 Package Details
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
6X
e
e1
8X b
0.25 [.010]
A
MILLIMETERS
MAX
A
5
INCHES
MIN
MAX
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
A1
y
0.10 [.004]
8X L
8X c
7
C A B
FOOTPRINT
NOT ES :
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONTROLLING DIMENS ION: MILLIMETER
3. DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD FOR S OLDERING T O
A SUBST RATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
8
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IRF7835PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 2.1mH, RG = 25Ω, IAS = 15A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/06
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9