IRLML2246PbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-20
V
135
mΩ
2.9
nC
-2.6
A
G 1
3 D
S
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRLML2246TRPbF-1
Micro3™ (SOT-23)
2
Micro3TM (SOT-23)
IRLML2246TRPbF-1
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML2246TRPbF-1
Absolute Maximum Ratings
Symbol
VDS
Parameter
Max.
Units
-20
V
ID @ TA = 25°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
-2.6
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-2.1
IDM
Pulsed Drain Current
-11
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.80
A
W
Linear Derating Factor
0.01
VGS
Gate-to-Source Voltage
± 12
W/°C
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
1
f
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Typ.
Max.
–––
100
–––
99
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Units
°C/W
October 28, 2014
IRLML2246PbF-1
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
–––
–––
–––
9.5
–––
–––
90
135
–––
157
236
-0.4
–––
-1.1
–––
–––
-1.0
–––
–––
-150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
16
–––
Ω
gfs
Qg
Forward Transconductance
3.4
–––
–––
S
Total Gate Charge
–––
2.9
–––
Qgs
Gate-to-Source Charge
–––
0.52
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.2
–––
VGS = -4.5V
td(on)
Turn-On Delay Time
–––
5.3
–––
VDD =-10V
tr
Rise Time
–––
7.7
–––
td(off)
Turn-Off Delay Time
–––
26
–––
tf
Fall Time
–––
16
–––
Ciss
Input Capacitance
–––
220
–––
Coss
Output Capacitance
–––
70
–––
Crss
Reverse Transfer Capacitance
–––
48
–––
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
Drain-to-Source Leakage Current
V
Conditions
-20
VGS = 0V, ID = -250μA
mV/°C Reference to 25°C, ID = -1mA
mΩ
V
μA
nA
VGS = -4.5V, ID = -2.6A
VGS = -2.5V, ID = -2.1A
VDS = VGS, ID = -10μA
d
d
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
VDS = -10V, ID = -2.6A
ID = -2.6A
nC
ns
VDS =-10V
ID = -1.0A
d
d
RG = 6.8Ω
VGS = -4.5V
VGS = 0V
pF
VDS = -16V
ƒ = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
Min. Typ. Max. Units
–––
–––
-1.3
–––
-11
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
-1.2
V
trr
Reverse Recovery Time
–––
17
26
ns
Qrr
Reverse Recovery Charge
–––
6.2
9.3
nC
c
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -2.6A, VGS = 0V
TJ = 25°C, VR = -15V, IF=-2.6A
di/dt = 100A/μs
d
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board.
Refer to application note #AN-994.
2
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d
IRLML2246PbF-1
100
-ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
VGS
-10V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
1
-1.5V
≤60μs PULSE WIDTH
TOP
-ID, Drain-to-Source Current (A)
100
10
BOTTOM
1
-1.5V
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
0.1
0.1
1
10
0.1
100
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
10
T J = 150°C
1
T J = 25°C
VDS = -15V
≤60μs PULSE WIDTH
0.1
ID = -2.6A
1.4
VGS = -4.5V
1.2
1.0
0.8
0.6
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
VGS
-10V
-4.5V
-3.0V
-2.5V
-2.3V
-2.0V
-1.8V
-1.5V
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-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
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October 28, 2014
IRLML2246PbF-1
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C, Capacitance (pF)
C oss = C ds + C gd
1000
Ciss
Coss
Crss
100
ID= -2.6A
12.0
-V GS, Gate-to-Source Voltage (V)
C rss = C gd
VDS= -16V
VDS= -10V
10.0
VDS= -4.0V
8.0
6.0
4.0
2.0
0.0
10
1
10
0
100
VDS, Drain-to-Source Voltage (V)
3
4
5
6
7
8
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
2
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
10
T J = 150°C
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1msec
100μsec
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
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0.10
1.0
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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October 28, 2014
IRLML2246PbF-1
RD
V DS
3.0
V GS
-I D, Drain Current (A)
2.5
D.U.T.
RG
-
+
VDD
2.0
-VGS
1.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on)
tr
t d(off)
tf
VGS
0.0
10%
25
50
75
100
125
150
T A , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
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October 28, 2014
10
300
1200
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRLML2246PbF-1
ID = -2.6A
1000
250
200
150
100
T J = 125°C
T J = 25°C
50
1
2
3
4
5
6
7
8
9
10 11 12
Vgs = -2.5V
800
600
400
Vgs = -4.5V
200
0
0
2
4
6
8
10
12
14
16
-I D, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs.
Drain Current
Fig 12. Typical On-Resistance vs.
Gate Voltage
Id
Vds
Vgs
L
DUT
0
Vgs(th)
Qgodr
Qgd
SS
Qgs2 Qgs1
Fig 14a. Basic Gate Charge Waveform
6
20K
1K
VCC
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Fig 14b. Gate Charge Test Circuit
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October 28, 2014
IRLML2246PbF-1
1000
1.0
800
Single Pulse Power (W)
-V GS(th), Gate threshold Voltage (V)
1.2
0.8
0.6
0.4
ID = -10μA
ID = -250μA
600
400
200
0.2
0.0
-75 -50 -25
0
25
50
75 100 125 150
0
1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage vs.
Junction Temperature
7
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Time (sec)
Fig 16. Typical Power vs. Time
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IRLML2246PbF-1
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L
6
5
D
6
3
E1
E
1
5
B
ccc
C B A
2
e1
L2
4
INCHES
A
A1
MIN
0.89
0.01
MAX
1.12
0.10
MIN
.036
.0004
MAX
.044
.0039
A2
b
c
0.88
0.30
0.08
1.02
0.50
0.20
.035
.0119
.0032
.040
.0196
.0078
D
E
E1
e
2.80
2.10
1.20
3.04
2.64
1.40
.111
.083
.048
.119
.103
.055
e1
L
0.95 BSC
1.90 BSC
0.40
0.60
.0375 BSC
.075 BSC
.0158
.0236
L1
L2
0
aaa
0.25 BSC
0.54 RE F
0°
8°
0.10
.0118 BSC
.021 REF
0°
8°
.004
bbb
ccc
0.20
0.15
.008
.006
e
S
Y
M
B
O
L
DIMENSIONS
MIL LIMET ERS
A
A1
A2
b
c
D
E
E1
e
H
A A2
L1
3X b
A1
bbb
aaa C
3 SU RF
C B A
0
7
RECOMMENDED FOOT PR INT
3X L
e1
L
L1
L2
0
aaa
LEAD AS SIGNMENT
1. GATE
2. S OURCE
3X
0.972
[.038]
3. DRAIN
2.742
[.1079]
3X
0.95
[.0375]
0.802
[.031]
NOT ES
1. DIMENS IONING AND T OLE RANCING PER AS ME Y14.5M-1994.
2. DIMENS IONS ARE S HOWN IN MILLIMET E RS [INCHES ]
bbb
ccc
3. CONT R OLLING DIME NS ION: MIL LIME T E R.
4 DAT UM PLANE H IS L OCAT ED AT T HE MOL D PART ING LINE.
1.90
[.075]
DIMENS IONS
MILLIMET ERS
MAX
MIN
0.89
1.12
0.01
0.10
0.88
1.02
0.50
0.30
0.08
0.20
2.80
3.04
2.10
2.64
1.20
1.40
0.95 BS C
1.90 BS C
0.40
0.60
0.25 BS C
0.54 REF
0°
8°
0.10
0.20
0.15
5 DAT UM A AND B T O BE DET ER MINE D AT DAT UM PLANE H.
INCHES
MIN
MAX
.036
.044
.0004
.0039
.035
.040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048
.055
.0375 BSC
.075 BS C
.0158
.0236
.0118 BSC
.021 REF
0°
8°
.004
.008
.006
6 DIMENS IONS D AND E1 ARE ME AS URE D AT DAT UM PLANE H.
DIME NS IONS DOES NOT INCLUDE MOLD PROT RUS IONS OR
INT ER LEAD F LAS H. MOLD PROT RUS ION OR INT E RLE AD F L AS H
S HALL NOT E XCE ED 0.25 MM [.010 INCH] PE R S IDE.
7 DIMENS ION L IS T HE LE AD LE NGT H F OR S OLDERING T O A S UBS T RAT E.
8. OUT L INE CONF ORMS T O JEDE C OUT LINE T O-236AB.
Micro3 (SOT-23 / TO-236AB) Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
DATE CODE
PART NUMBER
LEAD FREE
INDUS TRIAL VERS ION
Cu WIRE
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
S = IRLML6244
T = IRLML6246
U = IRLML6344
V = IRLML6346
W = IRFML8244
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
Note: A line above the work week
(as s hown here) indicates Lead - Free.
YEAR
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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October 28, 2014
IRLML2246PbF-1
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
TR
FEED DIRECTION
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
†
Qualification information
Industrial
Qualification level
(per JE DEC JE S D47F
Moisture Sensitivity Level
Micro3™ (SOT-23)
RoHS compliant
††
guidelines)
MS L1
††
(per JE DE C J-S TD-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/28/2014
Comment
• Updated partmarking to reflect Industrial partmarking on page 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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October 28, 2014