PD - 97137A IRF8788PbF HEXFET® Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l VDSS RDS(on) max Qg 30V 2.8m:@VGS = 10V 44nC Benefits l l l l l l l Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% tested for Rg Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Description The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Max. Units 30 ±20 V 24 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 190 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range ID @ TA = 70°C A 19 c W W/°C 0.02 -55 to + 150 °C Thermal Resistance Parameter RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. ––– 20 ––– 50 Units °C/W Notes through are on page 9 www.irf.com 1 8/18/08 IRF8788PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 2.3 2.8 ––– 3.04 3.8 V V/°C Reference to 25°C, ID = 1mA mΩ VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.59 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 95 ––– ––– Qg Total Gate Charge ––– 44 66 Qgs1 Pre-Vth Gate-to-Source Charge ––– 12 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.7 ––– Qgd Gate-to-Drain Charge ––– 14 ––– Qgodr IGSS Conditions VGS = 0V, ID = 250μA μA nA S VGS = 10V, ID = 24A VGS = 4.5V, ID = 19A e e VDS = VGS, ID = 100μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 19A VDS = 15V nC VGS = 4.5V ID = 19A Gate Charge Overdrive ––– 13.3 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 18.7 ––– See Figs. 17a & 17b Qoss Output Charge ––– 22 ––– nC Rg Gate Resistance ––– 0.54 1.09 Ω td(on) Turn-On Delay Time ––– 23 ––– tr Rise Time ––– 24 ––– td(off) Turn-Off Delay Time ––– 23 ––– tf Fall Time ––– 11 ––– See Fig. 15a & 15b Ciss Input Capacitance ––– 5720 ––– VGS = 0V Coss Output Capacitance ––– 980 ––– Crss Reverse Transfer Capacitance ––– 450 ––– VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns pF ID = 19A RG = 1.8Ω VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 230 mJ ––– 19 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– ISM (Body Diode) Pulsed Source Current ––– ––– VSD (Body Diode) Diode Forward Voltage c 3.1 A 190 A Conditions MOSFET symbol showing the integral reverse D G ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 19A, VGS = 0V ––– ––– 0.75 V TJ = 25°C, IS = 2.2A, VGS = 0V trr Reverse Recovery Time ––– 24 36 ns TJ = 25°C, IF = 19A, VDD = 15V Qrr Reverse Recovery Charge ––– 33 50 nC di/dt = 230A/μs ton Forward Turn-On Time 2 S e e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF8788PbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 1 ≤60μs PULSE WIDTH 0.1 Tj = 25°C BOTTOM 10 2.3V 2.3V ≤60μs PULSE WIDTH 0.01 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 VDS = 15V ≤60μs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) Tj = 150°C 1 0.1 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 T J = 150°C 10 T J = 25°C 1 ID = 24A VGS = 10V 1.5 1.0 0.5 0.1 1 2 3 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 4 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF8788PbF 100000 16 C, Capacitance (pF) Coss = Cds + Cgd 10000 Ciss Coss 1000 ID= 19A VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Crss VDS = 24V VDS = 15V 12 8 4 0 100 1 10 0 100 1000 ID, Drain-to-Source Current (A) 1000 ISD , Reverse Drain Current (A) 60 80 100 120 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) 100 TJ = 150°C TJ = 25°C 10 100μsec 10 1msec 1 10msec TA = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 1.0 0.2 0.4 0.6 0.8 1.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 Qg, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100 20 1.2 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF8788PbF 2.5 VGS(th), Gate Threshold Voltage (V) 24 ID , Drain Current (A) 20 16 12 8 4 ID = 250μA 2.0 ID = 100μA 1.5 0 25 50 75 100 125 1.0 150 -75 -50 -25 TA , Ambient Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 Thermal Response ( Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 τJ 0.1 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 R5 R5 R6 R6 R7 R7 R8 R8 τ5 τ6 τ7 τ8 τa τ1 τ2 τ2 τ3 τ3 τ4 τ4 τ5 τ6 τ7 Ci= τi/Ri Ci i/Ri τ8 Ri (°C/W) τι (sec) 0.0141064 0.0210000 0.2184000 0.8204000 4.7558194 0.4648000 28.9076170 15.1191958 0.000057 0.000286 0.000375 0.001902 0.004544 0.013931 0.038563 2.069546 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 1000 7 ID = 19A 6 5 4 TJ = 125°C 3 TJ = 25°C 2 2.0 4.0 6.0 8.0 10.0 EAS, Single Pulse Avalanche Energy (mJ) RDS (on), Drain-to -Source On Resistance (mΩ) IRF8788PbF ID 6.4A 7.4A BOTTOM 19A TOP 800 600 400 200 0 25 VGS, Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V D.U.T RG VGS 20V DRIVER L VDS tp + V - DD IAS tp A 0.01Ω I AS Fig 14a. Unclamped Inductive Test Circuit V DS VGS RG RD VDS 90% D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 15a. Switching Time Test Circuit 6 Fig 14b. Unclamped Inductive Waveforms 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRF8788PbF Driver Gate Drive D.U.T P.W. + + - - • • • • D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer Period VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K 20K VCC Vgs(th) S Qgodr Fig 17a. Gate Charge Test Circuit www.irf.com Qgd Qgs2 Qgs1 Fig 17b. Gate Charge Waveform 7 IRF8788PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 6 8 7 6 5 1 2 3 4 H E 0.25 [.010] A 6X e1 8X b 0.25 [.010] A A1 MIL L IME T E R S MAX MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B AS IC 1.27 B AS IC MAX .025 B AS IC 0.635 B AS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 e INCH E S MIN K x 45° C y 0.10 [.004] 8X L 8X c 7 C A B FOOT PRINT 8X 0.72 [.028] NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECTIFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF8788PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.25mH, RG = 25Ω, IAS = 19A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/08 www.irf.com 9