LESHAN RADIO COMPANY, LTD. NPN Epitaxial Silicon Transistor L9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to L9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 Units V VCEO VEBO Collector-Emitter Voltage 20 V Emitter-Base Voltage 5 IC V Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC =100µA, IE =0 Min. 40 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 20 V BVEBO Emitter-Base Breakdown Voltage IE =100µA, IC =0 5 V ICBO Collector Cut-off Current VCB =25V, IE =0 100 nA IEBO Emitter Cut-off Current VEB =3V, IC =0 100 nA hFE1 hFE2 DC Current Gain VCE =1V, IC =50mA VCE =1V, IC =500mA 64 30 120 120 300 VCE (sat) Collector-Emitter Saturation Voltage IC =500mA, IB =50mA 0.16 0.6 V VBE (sat) Base-Emitter Saturation Voltage IC =500mA, IB =50mA 0.91 1.2 V VBE (on) Base-Emitter On Voltage VCE =1V, IC =10mA 0.67 0.7 V 0.6 hFE Classification Classification D F G hFE1 64 ~ 96 96 ~ 135 112 ~ 166 H 144 ~ 202 I 202 ~ 300 L9013-1/2 LESHAN RADIO COMPANY, LTD. TO-92 ＳＩＺＥ ＬＩＳＴ（ｍｍ） Ａ１ ４．５±０．１ Ｐ１ ６．３５±０．４ ＨＯ １６．０±０．５ Ａ ４．５±０．１ Ｆ１ ／Ｆ２ ２．５（＋０．６，－０．３） Ｈ１ Ｔ ３．９±０．１ △ｈ ０±２．０ ＤＯ ４．０±０．２ ｄ ０．４２±０．０１ Ｗ １８．０（＋１．０，－０．５） ｔ ０．６±０．２ ｌ１ ２．５（ｍｉｎ） ＷＯ ６．０±０．３ Ｌ１ ３２．２５（ｍｉｎ） １１．０（ｍａｘ） Ｐ １２．７±１．０ Ｗ１ ９．０（＋０．７５，－０．５） △Ｐ ０±１．０ ＰＯ １２．７±０．２ Ｗ２ ０．５（ｍａｘ） L9013-2/2