SUNTAC STC8550

S
STC8550
PNP Silicon Transistor
0
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to STC8050
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
-40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
-40
V
Emitter-Base Voltage
-6
IC
Collector Current
V
-1.5
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -100µA, IE=0
Min.
-40
Typ.
Max.
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC= -2mA, IB=0
-40
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -100µA, IC=0
-6
V
ICBO
Collector Cut-off Current
VCB= -35V, IE=0
-100
nA
IEBO
Emitter Cut-off Current
VEB= -6V, IC=0
-100
nA
hFE1
hFE2
hFE3
DC Current Gain
VCE= -1V, IC= -5mA
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
45
85
40
170
160
80
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -800mA, IB= -80mA
-0.28
-0.5
VBE (sat)
Base-Emitter Saturation Voltage
IC= -800mA, IB= -80mA
-0.98
-1.2
V
VBE (on)
Base-Emitter on Voltage
VCE= -1V, IC= -10mA
-0.66
-1.0
V
Cob
Output Capacitance
VCB= -10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE= -10V, IC= -50mA
100
V
15
pF
200
MHz
hFEClassification
Classification
A
B
C
hFE2
85 ~ 160
120 ~ 200
200 ~ 400
Typical Characteristics
STC8550
1000
-0.5
VCE = -1V
-0.4
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
-0.3
IB=-2.0mA
IB=-1.5mA
-0.2
IB=-1.0mA
-0.1
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB=-4.0mA
100
10
IB=-0.5mA
-0.4
-0.8
-1.2
-1.6
1
-0.1
-2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
-100
-100
VCE = -1V
IC[mA], COLLECTOR CURRENT
IC=10IB
-1000
VBE(sat)
-100
VCE(sat)
-10
-0.1
-1
-10
-100
-10
-1
-0.1
-0.0
-1000
-0.4
-0.6
-0.8
-1.0
-1.2
100
f=1MHz
IE=0
10
1
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
-0.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
-1
-1000
Figure 2. DC current Gain
-10000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Cob[pF], CAPACITANCE
-1
1000
VCE=-10V
100
10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product