STC9015 PNP Silicon Transistor Low Frequency Amplifier • Collector-Base Voltage : VCBO= -60V • Complement to STC9014 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -60 Units V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -60 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -50 V BVEBO Emitter-Base Breakdown Voltage IE = -10µA. IC=0 -5 V ICBO Collector Cut-off Current VCB= --60V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -100 nA hFE DC Current Gain VCE= -6V, IC= -1mA VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.50 -0.62 -0.80 V fT Current Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 40 700 Cob Output Capacitance VCB= -10V, IE = 0, f=1MHz 2.8 NF Noise Figure VCE= -6V, IC= -0.3mA f=1MHz, Rs=10kΩ 6.0 MHz pF 20 dB hFE Classification Classification hFE A 40 ~ 140 B C 120 ~ 240 200 ~ 400 D 350 ~ 700 1/2 Typical Characteristics STC9015 1000 -50 VCE = -6V IC[mA], COLLECTOR CURRENT -45 IB = -400µ A -40 hFE, DC CURRENT GAIN IB = -350µ A -35 IB = -300µ A -30 IB = -250µ A -25 IB = -200µ A -20 IB = -150µ A -15 IB = -100µ A -10 100 10 IB = -50µ A -5 1 -0.1 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 Figure 2. DC current Gain -100 -10 IC = 10 IB IC[mA], COLLECTOR CURRENT -1 VCE = -6V V BE(sat) -0.1 V CE(sat) -10 -100 -1 -0.1 0.0 -0.01 -1 -10 -1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE -0.6 -0.8 -1.0 -1.2 10 1 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -0.2 1000 VCE = -6V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product 2/2