LESHAN RADIO COMPANY, LTD. NPN Epitaxial Silicon Transistor L9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT=450mW) • High hFE and good linearity • Complementary to L9015 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 50 Units V VCEO VEBO Collector-Emitter Voltage 45 V Emitter-Base Voltage 5 IC V Collector Current 100 mA PC Collector Power Dissipation 450 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC =100µA, IE =0 Min. 50 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V BVEBO Emitter-Base Breakdown Voltage IE =100µA, IC =0 5 V ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA IEBO Emitter Cut-off Current VEB =5V, IC =0 50 nA hFE DC Current Gain VCE =5V, IC =1mA 280 1000 VCE (sat) Collector-Base Saturation Voltage IC =100mA, IB =5mA 60 0.14 0.3 VBE (sat) Base-Emitter Saturation Voltage IC =100mA, IB =5mA 0.84 1.0 VBE (on) Base-Emitter On Voltage VCE =5V, IC =2mA 0.63 0.7 V Cob Output Capacitance VCB =10V, IE =0 f=1MHz 2.2 3.5 pF fT Current Gain Bandwidth Product VCE =5V, IC =10mA NF Noise Figure VCE =5V, IC =0.2mA f=1KHz, RS=2KΩ 0.58 150 V 270 0.9 MHz 10 dB hFE Classification Classification A B C D hFE 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000 L9014-1/2 LESHAN RADIO COMPANY, LTD. TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters L9014-2/2