LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode FEATURES z We declare that the material of product compliance with RoHS requirements. L1SS360TT1G S-L1SS360TT1G z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Package 3 Shipping L1SS360TT1G S-L1SS360TT1G SC89 3000 Tape & Reel L1SS360TT3G S-L1SS360TT3G SC89 10000 Tape & Reel 2 1 SC-89 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Symbol VR Forward Current Peak Forward Surge Current IF I FM(surge) Value Unit 80 200 2 Vdc mAdc Adc 1 CATHODE 3 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation FR-4 Board(2), TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 150 mW RθJA PD 1.2 833 200 mW/°C °C/W mW RθJA TJ , Tstg 1.6 600 –55 to +150 mW/°C °C/W °C DEVICE MARKING L1SS360TT1G = A3 ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V (BR) 80 – Vdc – – 0.1 0.5 – 4.0 – – 750 900 – 1200 – 4.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 30 Vdc) (V R = 80 Vdc) IR Diode Capacitance (V R = 0, f = 1.0 MHz) C D Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) V F µAdc (I F = 100 mAdc) Reverse Recovery Time t rr pF mVdc ns (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.A 1/3 LESHAN RADIO COMPANY, LTD. L1SS360TT1G, S-L1SS360TT1G 820 Ω +10 V 2k 0.1 µF 100 µH tp tr IF 0.1 µF IF t trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 I R , REVERSE CURRENT (µA) T A = 85°C 10 T A = – 40°C 1.0 T A = 25°C 0.1 T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Leakage Current Figure 2. Forward Voltage 1.75 C D ,DIODE CAPACITANCE (pF) I F , FORWARD CURRENT (mA) T A = 150°C 1.5 1.25 1.0 0.75 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance Rev.A 2/3 50 LESHAN RADIO COMPANY, LTD. L1SS360TT1G, S-L1SS360TT1G SC-89 Dimension Outline: A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 SEATING PLANE Soldering Footprint: H H L G Rev.A 3/3