L1SS360TT1G S

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Anode
FEATURES
z We declare that the material of product compliance with
RoHS requirements.
L1SS360TT1G
S-L1SS360TT1G
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Package
3
Shipping
L1SS360TT1G
S-L1SS360TT1G
SC89
3000 Tape & Reel
L1SS360TT3G
S-L1SS360TT3G
SC89
10000 Tape & Reel
2
1
SC-89
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Symbol
VR
Forward Current
Peak Forward Surge Current
IF
I FM(surge)
Value
Unit
80
200
2
Vdc
mAdc
Adc
1
CATHODE
3
2
CATHODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 4 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
FR-4 Board(2), TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
150
mW
RθJA
PD
1.2
833
200
mW/°C
°C/W
mW
RθJA
TJ , Tstg
1.6
600
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
L1SS360TT1G = A3
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V (BR)
80
–
Vdc
–
–
0.1
0.5
–
4.0
–
–
750
900
–
1200
–
4.0
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 30 Vdc)
(V R = 80 Vdc)
IR
Diode Capacitance
(V R = 0, f = 1.0 MHz)
C
D
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
V
F
µAdc
(I F = 100 mAdc)
Reverse Recovery Time
t rr
pF
mVdc
ns
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.A 1/3
LESHAN RADIO COMPANY, LTD.
L1SS360TT1G, S-L1SS360TT1G
820 Ω
+10 V
2k
0.1 µF
100 µH
tp
tr
IF
0.1 µF
IF
t
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
100
10
I R , REVERSE CURRENT (µA)
T A = 85°C
10
T A = – 40°C
1.0
T A = 25°C
0.1
T A = 125°C
1.0
T A = 85°C
0.1
T A = 55°C
0.01
T A = 25°C
0.001
0.2
0.4
0.6
0.8
1.0
0
1.2
10
20
30
40
V R , REVERSE VOLTAGE (VOLTS)
V F , FORWARD VOLTAGE (VOLTS)
Figure 3. Leakage Current
Figure 2. Forward Voltage
1.75
C D ,DIODE CAPACITANCE (pF)
I F , FORWARD CURRENT (mA)
T A = 150°C
1.5
1.25
1.0
0.75
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
Rev.A 2/3
50
LESHAN RADIO COMPANY, LTD.
L1SS360TT1G, S-L1SS360TT1G
SC-89
Dimension Outline:
A
-X-
3
1
2
B -Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
S
K
G
2 PL
D
0.08 (0.003)
M
DIM
A
B
C
D
G
H
J
K
L
M
N
S
3 PL
X Y
N
M
C
J
-T-
MILLIMETERS
MIN
NOM MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 _
−−−
−−−
10 _
1.50
1.60
1.70
INCHES
NOM MAX
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.004 0.006 0.008
0.012 0.016 0.020
0.043 REF
−−−
−−−
10 _
−−−
−−−
10 _
0.059 0.063 0.067
MIN
0.059
0.030
0.024
0.009
SEATING
PLANE
Soldering Footprint:
H
H
L
G
Rev.A 3/3