RB715W Diodes Shottky barrier diode RB715W zExternal dimensions (Unit : mm) zLead size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 0.15±0.05 1.3 zFeatures 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability. 0.7 1.6±0.2 0.7 0.7 (3) (1) (2) 0.2±0.1 -0.05 EMD3 0.6 0.6 0.55±0.1 0.5 0.5 1.0±0.1 zConstruction Silicon epitaxial planer 0～0.1 0.1Min 0.8±0.1 1.6±0.2 zApplication Low current rectification 0.7±0.1 zStructure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) zTaping dimensions (Unit : mm) φ1.55±0.1 0 2.0±0.05 0.3±0.1 φ0.5±0.1 8.0±0.2 0～0.1 1.8±0.2 1.8±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 0.9±0.2 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature Limits 40 40 30 200 125 -40 to +125 Unit V V mA mA ℃ ℃ Min. - Typ. - Max. 0.37 1 Unit V µA - 2.0 - pF Symbol VRM VR Io IFSM Tj Tstg (*1)Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage IR Reverse current Capacitance between terminals Ct Conditions IF=1mA VR=10V VR=1.0V f=1.0MHz Rev.B 1/3 RB715W Diodes zElectrical characteristic curves (Ta=25°C) Ta=125℃ Ta=125℃ Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0.01 0 500 1000 0 1500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 30 0 280 270 260 AVE:267.4mV 0.8 0.7 0.5 0.4 0.3 AVE:0.083nA 0.2 8.3ms 10 5 AVE:7.30A 2 AVE:2.02pF Ct DISPERSION MAP 10 9 Ifsm 8.3ms 8.3ms 1cyc 5 0 Ifsm 8 t 7 6 5 4 3 2 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 Per diode Rth(j-a) Rth(j-c) D=1/2 0.02 Sin(θ＝180) DC 0.01 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 100 Per diode 0.03 REVERSE POWER DISSIPATION:PR (W) time FORWARD POWER DISSIPATION:Pf(W) IF=10mA 300us 10 TIME:t(ms) IFSM-t CHARACTERISTICS 0.003 0.04 Mounted on epoxy board 10 0.001 3 1 0 100 4 0 10 1ms 5 1 15 1000 6 0 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm IM=1mA 7 0.1 20 10000 Ta=25℃ f=1MHz VR=0V n=10pcs 8 IR DISPERSION MAP 15 30 9 0.6 VF DIPERSION MAP 20 20 10 Ta=25℃ VR=10V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 290 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 0.9 Ta=25℃ IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 1 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) f=1MHz 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 0.002 D=1/2 DC 0.001 Sin(θ＝180) 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB715W Diodes 0.1 0.1 0.08 t DC 0.06 T VR D=t/T VR=20V Tj=125℃ D=1/2 0.04 0.02 Per diode Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode 0.06 DC 0.04 D=1/2 0 t T VR D=t/T VR=20V Tj=125℃ Sin(θ＝180) 0.02 Sin(θ＝180) Io 0A 0V 0.08 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3