LBSS4240LT1G

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
40V,2A Low VCE(sat) NPN Silicon
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
LBSS4240LT1G
S-LBSS4240LT1G
• Replacement for SOT89/SOT223 standard packaged
transistors.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
1
2
SOT– 23
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
COLLECTOR
3
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
1
BASE
DESCRIPTION
2
EMITTER
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: LBSS5240LT1G .
ORDERING INFORMATION
Device
Marking
Shipping
LBSS4240LT1G
S-LBSS4240LT1G
ZE
3000/Tape & Reel
LBSS4240LT3G
S-LBSS4240LT3G
ZE
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
40
V
Collector–Base Voltage
V CBO
40
V
Emitter–Base Voltage
V EBO
5.0
V
Collector Current — Continuous
IC
2
A
total power dissipation
PD
0.3
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
-65 ~+150
°C
THERMAL CHARACTERISTICS
Symbol
Rth(j-a)
Parameter
thermal resistance from
junction to ambient
Conditions
Value
Unit
in free air;note 1
417
K/W
in free air;note 2
260
K/W
Notes:
1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint.
2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm.2
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LBSS4240LT1G,S-LBSS4240LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current IE = 0; VCB = 30 V
−
100
nA
IEBO
emitter-base cut-off current
IC = 0; VEB = 4 V
−
100
nA
hFE
DC current gain
IC = 100 mA; VCE = 2 V
350
−
IC = 500 mA; VCE = 2 V
300
−
IC = 1 A; VCE = 2 V
300
−
VCEsat
collector-emitter saturation
voltage
IC = 2 A; VCE = 2 V
150
−
IC = 100 mA; IB = 1 mA
−
70
mV
IC = 500 mA; IB = 50 mA
−
100
mV
IC = 750 mA; IB = 15 mA
−
180
mV
IC = 1 A; IB = 50 mA; note 1
−
180
mV
IC = 2 A; IB = 200 mA; note 1
−
320
mV
VBEsat
base-emitter saturation
voltage
IC = 2 A; IB = 200 mA; note 1
−
1.1
V
VBEon
base-emitter turn on voltage
IC = 100 mA; VCE = 2 V
−
0.75
V
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
−
20
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 100 MHz
100
−
MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
LBSS4240LT1G,S-LBSS4240LT1G
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
VCE=2V
VCE=2V
1.2
BASE TURN-ON VOLTAGE : VBE(on) (V)
DC CURRENT GAIN : hFE
10000
1000
100
10
0.0001
0.001
0.01
0.1
1
1
0.8
0.6
0.4
0.2
0
0.0001
10
COLLECTOR CURRENT : IC (A)
Ta=25C
Ta=-55C
Fig.2 BASE-EMITTER TURN-ON VOLTAGE
IC/IB=20
100
10
0.0001
0.001
0.01
0.1
1
Ta=-55C
1
0.1
0.0001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Ta=25C
10
VOLTAGE : VBE(sat) (V)
10
BASE-EMITTER SATURATION
VOLTAGE : VCE(sat) (mV)
VS.COLLECTOR CURRENT
IC/IB=20
1000
10
Ta=150C
Ta=-55C
Ta=25C
Ta=150C
Fig.1 DC CURRENT GAIN VS.COLLECTOR
CURRENT
COLLECTOR SATURATION
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Ta=150C
Fig.3 COLLECTOR-EMITTER SATURATION
VOLTAGE VS.COLLECTOR CURRENT
Ta=25C
Ta=-55C
Ta=150C
Fig.4 BASE-EMITTER SATURATION
VOLTAGE VS.COLLECTOR CURRENT
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
LBSS4240LT1G,S-LBSS4240LT1G
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
2
1
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE : VCE (V)
5
IB=4mA
IB=6mA
IB=8mA
IB=10mA
IB=12mA
IB=14mA
IB=16mA
IB=18mA
IB=20mA
IB=2mA
IC/IB=20
1000
RESISTANCE:Rce (Ω)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT : IC (A)
3
100
10
1
0.1
0.0001
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Ta=25C
Ta=-55C
10
Ta=150C
Fig.6 COLLECTOR-EMITTER SATURATION
RESISTANCE VS.COLLECTOR CURRENT
Fig.5 COLLECTOR CURRENT VS.COLLECTOREMITTER SATURATION VOLTAGE
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
LBSS4240LT1G,S-LBSS4240LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5