DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5240Y 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Oct 24 2002 Feb 28 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240Y FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage −40 V ICM peak collector current −3 A IC collector current (DC) −2 A RCEsat equivalent on-resistance <200 mΩ • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. PARAMETER MAX. UNIT PINNING APPLICATIONS PIN • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector DESCRIPTION PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. NPN complement: PBSS4240Y. handbook, halfpage 6 5 4 1, 2, 5, 6 3 MARKING 4 MARKING CODE(1) TYPE NUMBER PBSS5240Y 1 52* Top view Note Fig.1 1. * = p: made in Hongkong. * = t: made in Malaysia. 2002 Feb 28 2 2 3 MAM464 Simplified outline (SOT363; SC-88) and symbol. NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −2 A ICM peak collector current − −3 A IBM peak base current − −300 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 270 mW Tamb ≤ 25 °C; note 2 − 430 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT note 1 463 K/W note 2 291 K/W Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2. 2002 Feb 28 3 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240Y CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector-base cut-off current VCB = −30 V; IE = 0 MIN. MAX. UNIT − −100 nA VCB = −30 V; IE = 0; Tj = 150 °C − −50 μA nA IEBO emitter-base cut-off current VEB = −4 V; IC = 0 − −100 hFE DC current gain VCE = −2 V; IC = −100 mA 300 − VCE = −2 V; IC = −500 mA 260 − VCE = −2 V; IC = −1 000 mA 210 − VCE = −2 V; IC = −2 000 mA 100 − IC = −100 mA; IB = −1 mA − −100 mV IC = −500 mA; IB = −50 mA − −110 mV IC = −750 mA; IB = −15 mA − −225 mV IC = −1 000 mA; IB = −50 mA − −225 mV IC = −2 000 mA; IB = −200 mA − −350 mV VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = −2 000 mA; IB = −200 mA − −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA − −0.75 V Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − 40 pF FT transition frequency IC = −100 mA; VCE = −10 V; f = 100 MHz 100 − MHz 2002 Feb 28 4 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240Y PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 Feb 28 REFERENCES IEC JEDEC EIAJ SC-88 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240Y DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Feb 28 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp7 Date of release: 2002 Feb 28 Document order number: 9397 750 09503