LBSS5240LT1G

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
-40V,-2A Low VCE(sat) PNP Silicon
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
LBSS5240LT1G
S-LBSS5240LT1G
• Replacement for SOT89/SOT223 standard packaged
transistors.
3
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
• Supply line switching circuits
1
2
SOT– 23
3
COLLECTOR
• Battery management applications
• DC/DC converter applications
1
BASE
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
2
EMITTER
DESCRIPTION
PNP low V CEsat transistor in a SOT23 plastic package.
NPN complement: LBSS4240LT1G .
ORDERING INFORMATION
Device
Marking
Shipping
LBSS5240LT1G
S-LBSS5240LT1G
ZF
3000/Tape & Reel
LBSS5240LT3G
S-LBSS5240LT3G
ZF
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
–40
V
Collector–Base Voltage
V CBO
–40
V
Emitter–Base Voltage
V
–5.0
V
EBO
Collector Current — Continuous
IC
–2
A
power dissipation
PD
0.3
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
-65 ~+150
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
Value
Unit
in free air;note 1
417
K/W
in free air;note 2
260
K/W
Notes:
1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint.
2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm.2
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LBSS5240LT1G,S-LBSS5240LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −30 V; IE = 0
−
−100
nA
IEBO
emitter-base cut-off current
VBE = −4 V; IC = 0
−
−100
nA
hFE
DC current gain
VCE = −2 V
VCEsat
IC = −100 mA
300
−
IC = −500 mA
260
−
IC = −1 A
210
−
IC = −2 A
100
−
collector-emitter saturation voltage IC = −100 mA; IB = −1 mA
−
−100
mV
IC = −500 mA; IB = −50 mA
−
−110
mV
IC = −750 mA; IB = −15 mA
−
−225
mV
IC = −1 A; IB = −50 mA
−
−225
mV
IC = −2 A; IB = −200 mA
−
−350
mV
VBEsat
base-emitter saturation voltage
IC = −2 A; IB = −200 mA
−
−1.1
V
VBE(on)
base-emitter turn-on voltage
VCE = −2 V; IC = −100 mA
−
−0.75
V
fT
transition frequency
Cc
collector capacitance
IC = −100 mA; VCE = −10 V;
f = 100 MHz
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
100
−
MHz
−
28
pF
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
LBSS5240LT1G,S-LBSS5240LT1G
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
1.2
BASE TURN-ON VOLTAGE : VBE(on) (V)
DC CURRENT GAIN : hFE
VCE=-2V
VCE=-2V
10000
1000
100
10
0.001
0.01
0.1
1
1
0.8
0.6
0.4
0.2
0
0.001
10
0.01
Ta=-55C
Ta=150C
VOLTAGE : VCE(sat) (mV)
COLLECTOR SATURATION
BASE-EMITTER SATURATION
VOLTAGE : VBE(sat) (V)
1
10
COLLECTOR CURRENT : IC (A)
Ta=25C
Ta=-55C
Ta=150C
Fig.3 COLLECTOR-EMITTER SATURATION
VOLTAGE VS.COLLECTOR CURRENT
IC/IB=20
10
100
0.1
Ta=150C
VS.COLLECTOR CURRENT
IC/IB=20
0.01
10
Fig.2 BASE-EMITTER TURN-ON VOLTAGE
1000
0.001
Ta=-55C
Ta=25C
Fig.1 DC CURRENT GAIN VS.COLLECTOR
CURRENT
10
0.0001
1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Ta=25C
0.1
1
0.1
0.0001
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Ta=25C
Ta=-55C
Ta=150C
Fig.4 BASE-EMITTER SATURATION
VOLTAGE VS.COLLECTOR CURRENT
Rev.O 3/5
10
LESHAN RADIO COMPANY, LTD.
LBSS5240LT1G,S-LBSS5240LT1G
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
IC/IB=20
1000
2
1
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE : VCE (V)
IB=-2mA
IB=-4mA
IB=-6mA
IB=-8mA
IB=-10mA
IB=-12mA
IB=-14mA
IB=-16mA
IB=-18mA
IB=-20mA
100
RESISTANCE:Rce (Ω)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT : IC (A)
3
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Ta=25C
Ta=-55C
Ta=150C
Fig.6 COLLECTOR-EMITTER SATURATION
RESISTANCE VS.COLLECTOR CURRENT
Fig.5 COLLECTOR CURRENT VS.COLLECTOREMITTER SATURATION VOLTAGE
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
LBSS5240LT1G,S-LBSS5240LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5