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P/N TBD
SURFACE MOUNT (NPN)
GENERAL PURPOSE TRANSISTOR
(2N2369)
Features:
Applications
•
•
•
•
•
•
•
Hermetically sealed
Available in T0-18, AUA or
AUB versions
MIL-PRF-19500
screening
available
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Analog Switches
Signal Conditoning
Small Signal Amplifiers
High Density Packaging
DESCRIPTION
The 2N2369 is a NPN, general-purpose switching and amplifier transistor which comes in your choice of a TO-18 metal can or 3 or 4
pin leadless chip carrier. All packages are hermetically sealed for high reliability and harsh environments. This device is available
custom binned to customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level..
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage-VCBO.......................………...............................................................................................…….....................40Vdc
Collector-Emitter Voltage-VCEO..............................................................................................................................…….....................15Vdc
Collector-Emitter Voltage-VCES ..............................…….......... .........................................................................................................40Vdc
Emitter-Base Voltage-VEBO …………………………………………………………………………………………………………………4.5Vdc
Collector Current-IC(PeaK)…………………………………………………………………………………………………………………....500mA
Continuous Collector Current.........................……...........................................................................................................................200mA
Maximum Junction Temperature..........................................................……...................................................................................+200°C
Operating Temperature (See part selection guide for actual operating temperature).....…............................................ -65°C to +125°C
Storage Temperature.....................................................................................................……........................................... -65°C to +200°C
Lead Soldering Temperature (vapor phase reflow for 30 seconds)............................……..............................................................215°C
Package Dimensions
Schematic Diagram
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St, Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
E-MAIL: [email protected]
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P/N TBD
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2368)
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
SYMBOL
MIN
BVCBO
BVCEO
BVCES
BVEBO
ICBO
40
40
15
4.5
Collector-Emitter Cutoff Current
ICES
Forward-Current Transfer Ratio
hfe
hfe
hfe
hfe4
hfe6
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE (SAT)
VCE (SAT)
VCE (SAT)
VCE (SAT)
VBE (SAT)
VBE (SAT)
VBE (SAT)
VBE (SAT)
VBE (SAT)
TYP
MAX
UNITS
TEST CONDITIONS
NOTE
I C = 10µA, IE = 0
I C = 10µA, IB = 0µA
I C = 10mA, IB = 0µA
I C = 0, IE = 10µA
VCB = 20V, IE = 0
1
0.4
Vdc
Vdc
Vdc
Vdc
µA
30
µA
VCB = 20V, IE = 0, TA = 150°C
0.4
µA
VCE = 20V
120
-
VCE = 1V, IC = 10mA
VCE = 1V, IC = 100mA
VCE = 2V, IC = 100mA
VCE = 1V, IC = 10mA @ -55°C
VCE = 0.35V, IC = 10mA @ -55°C
0.20
0.30
0.25
0.50
0.85
-1.02
1.15
1.60
V
V
V
V
V
V
V
V
V
I C = 10mA, IB = 1mA
I C = 10mA, IB = 1mA @ +125°C
I C = 30mA, IB = 3mA
I C = 100mA, IB = 10mA
I C = 10mA, IB = 1mA
I C = 10mA, IB = 1mA @ +125°C
I C = 10mA, IB = 1mA @ -55°C
I C = 30mA, IB = 3mA
I C = 100mA, IE = 10mA
MHz
VCB = 10V, 100kHz, < f < 1 MHz
-20
20
20
30
0.7
0.59
SMALL-SIGNAL CHARACTERISTICS
Current-Gain---Bandwidth Product
fT
500
CIBO
25
pF
VEB = 0.5 V, 100kHz, < f < 1 MHz
Turn-On Time
ton
35
nS
Turn-Off Time
toff
300
nS
VCC = 30V, IC = 150mA,
IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Input Capacitance (Output Open Capacitance)
NOTES:
1.
Pulse width < 300µS, duty cycle < 2.0%.
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
2N2369A PNP transistor, commercial version
2N2369A PNP transistor, JAN level screening
2N2369A PNP transistor, JANTX level screening
2N2369A PNP transistor, JANTXV level screening
2N2369A PNP transistor, JANS level screening
2N2369AUA PNP transistor, commercial version
2N2369AUA PNP transistor, JAN level screening
2N2369AUA PNP transistor, JANTX level screening
2N2369AUA PNP transistor, JANTXV level screening
2N2369AUA PNP transistor, JANS level screening
2N2369AUB PNP transistor, commercial version
2N2369AUB PNP transistor, JAN level screening
2N2369AUB PNP transistor, JANTX level screening
2N2369AUB PNP transistor, JANTXV level screening
2N2369AUB PNP transistor, JANS level screening
NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
E-MAIL: OPTOSALES @ MICROPAC.COM
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