P/N TBD SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR (2N2369) Features: Applications • • • • • • • Hermetically sealed Available in T0-18, AUA or AUB versions MIL-PRF-19500 screening available Mii OPTOELECTRONIC PRODUCTS DIVISION Analog Switches Signal Conditoning Small Signal Amplifiers High Density Packaging DESCRIPTION The 2N2369 is a NPN, general-purpose switching and amplifier transistor which comes in your choice of a TO-18 metal can or 3 or 4 pin leadless chip carrier. All packages are hermetically sealed for high reliability and harsh environments. This device is available custom binned to customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level.. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage-VCBO.......................………...............................................................................................…….....................40Vdc Collector-Emitter Voltage-VCEO..............................................................................................................................…….....................15Vdc Collector-Emitter Voltage-VCES ..............................…….......... .........................................................................................................40Vdc Emitter-Base Voltage-VEBO …………………………………………………………………………………………………………………4.5Vdc Collector Current-IC(PeaK)…………………………………………………………………………………………………………………....500mA Continuous Collector Current.........................……...........................................................................................................................200mA Maximum Junction Temperature..........................................................……...................................................................................+200°C Operating Temperature (See part selection guide for actual operating temperature).....…............................................ -65°C to +125°C Storage Temperature.....................................................................................................……........................................... -65°C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds)............................……..............................................................215°C Package Dimensions Schematic Diagram MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St, Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 E-MAIL: [email protected] 7-4 P/N TBD SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2368) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current SYMBOL MIN BVCBO BVCEO BVCES BVEBO ICBO 40 40 15 4.5 Collector-Emitter Cutoff Current ICES Forward-Current Transfer Ratio hfe hfe hfe hfe4 hfe6 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE (SAT) VCE (SAT) VCE (SAT) VCE (SAT) VBE (SAT) VBE (SAT) VBE (SAT) VBE (SAT) VBE (SAT) TYP MAX UNITS TEST CONDITIONS NOTE I C = 10µA, IE = 0 I C = 10µA, IB = 0µA I C = 10mA, IB = 0µA I C = 0, IE = 10µA VCB = 20V, IE = 0 1 0.4 Vdc Vdc Vdc Vdc µA 30 µA VCB = 20V, IE = 0, TA = 150°C 0.4 µA VCE = 20V 120 - VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA VCE = 2V, IC = 100mA VCE = 1V, IC = 10mA @ -55°C VCE = 0.35V, IC = 10mA @ -55°C 0.20 0.30 0.25 0.50 0.85 -1.02 1.15 1.60 V V V V V V V V V I C = 10mA, IB = 1mA I C = 10mA, IB = 1mA @ +125°C I C = 30mA, IB = 3mA I C = 100mA, IB = 10mA I C = 10mA, IB = 1mA I C = 10mA, IB = 1mA @ +125°C I C = 10mA, IB = 1mA @ -55°C I C = 30mA, IB = 3mA I C = 100mA, IE = 10mA MHz VCB = 10V, 100kHz, < f < 1 MHz -20 20 20 30 0.7 0.59 SMALL-SIGNAL CHARACTERISTICS Current-Gain---Bandwidth Product fT 500 CIBO 25 pF VEB = 0.5 V, 100kHz, < f < 1 MHz Turn-On Time ton 35 nS Turn-Off Time toff 300 nS VCC = 30V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Input Capacitance (Output Open Capacitance) NOTES: 1. Pulse width < 300µS, duty cycle < 2.0%. SELECTION GUIDE PART NUMBER PART DESCRIPTION 2N2369A PNP transistor, commercial version 2N2369A PNP transistor, JAN level screening 2N2369A PNP transistor, JANTX level screening 2N2369A PNP transistor, JANTXV level screening 2N2369A PNP transistor, JANS level screening 2N2369AUA PNP transistor, commercial version 2N2369AUA PNP transistor, JAN level screening 2N2369AUA PNP transistor, JANTX level screening 2N2369AUA PNP transistor, JANTXV level screening 2N2369AUA PNP transistor, JANS level screening 2N2369AUB PNP transistor, commercial version 2N2369AUB PNP transistor, JAN level screening 2N2369AUB PNP transistor, JANTX level screening 2N2369AUB PNP transistor, JANTXV level screening 2N2369AUB PNP transistor, JANS level screening NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 E-MAIL: OPTOSALES @ MICROPAC.COM 7-5