MOTOROLA 2N2369

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by 2N2369/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
*Motorola Preferred Device
2
BASE
1
EMITTER
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
15
Vdc
Collector – Emitter Voltage
VCES
40
Vdc
Collector– Base Voltage
VCBO
40
Vdc
Emitter– Base Voltage
VEBO
4.5
Vdc
IC(Peak)
500
mA
Collector Current — Continuous
IC
200
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
0.36
2.06
Watt
mW/°C
Total Device Dissipation @ TC = 100°C
Derate above 100°C
PD
0.68
6.85
Watts
mW/°C
TJ, Tstg
– 65 to +200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
486
°C/W
Thermal Resistance, Junction to Case
RqJC
147
°C/W
Collector Current (10 ms pulse)
Operating and Storage Junction
Temperature Range
2
1
CASE 22–03, STYLE 1
TO–18 (TO–206AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0)
V(BR)CES
40
—
Vdc
Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0)
VCEO(sus)
15
—
Vdc
Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0)
V(BR)CBO
40
—
Vdc
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
4.5
—
Vdc
—
—
0.4
30
ICES
—
0.4
mAdc
IB
—
0.4
mAdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
2N2369
2N2369A
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
2N2369A
Base Current
(VCE = 20 Vdc, VBE = 0)
2N2369A
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
mAdc
ICBO
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
2N2369
2N2369A
40
—
120
120
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = –55°C)
2N2369
20
—
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C)
(IC = 30 mAdc, VCE = 0.4 Vdc)
2N2369A
2N2369A
20
30
—
—
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N2369A
20
—
(IC = 100 mAdc, VCE = 2.0 Vdc)
2N2369
20
—
2N2369
2N2369A
—
—
0.25
0.20
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
2N2369A
2N2369A
—
—
0.30
0.25
(IC = 100 mAdc, IB = 10 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
2N2369A
—
0.50
All Types
2N2369A
2N2369A
2N2369A
0.70
0.59
—
—
0.85
—
1.02
1.15
2N2369A
—
1.60
fT
500
—
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
4.0
pF
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
4.0
pF
ts
—
13
ns
Turn–On Time
(IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc)
ton
—
12
ns
Turn–Off Time
(IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc)
toff
—
18
ns
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 10 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
hFE
—
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(IC = IB1 = 10 mAdc, IB2 = –10 mAdc)
1. Pulse Test: Pulse Width
2
v 300 ms, Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
t1
+10.6 V
0
–1.5 V
3V
< 1 ns
270 Ω
3.3 k
0
–9.15 V
Cs* < 4 pF
Figure 1. ton Circuit — 10 mA
t1
–2 V
10 V
95 Ω
+11.4 V
1k
Cs* < 4 pF
Figure 3. toff Circuit — 10 mA
t1
10 V
0
–8.6 V
0
< 1 ns
3.3 k
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
+10.8 V
270 Ω
t1
+10.75 V
Cs* < 12 pF
1k
< 1 ns
PULSE WIDTH (t1) BETWEEN
10 AND 500 µs
DUTY CYCLE = 2%
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
Figure 2. ton Circuit — 100 mA
95 Ω
Cs* < 12 pF
1N916
Figure 4. toff Circuit — 100 mA
* Total shunt capacitance of test jig and connectors.
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 Ω
RISE TIME = 1 ns
TURN–ON WAVEFORMS
Vin
0
ton
Vout
90%
0.1 µF
220 Ω
10%
Vout
3.3 kΩ
Vin
50 Ω
PULSE GENERATOR
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 Ω
PW ≥ 300 ns
DUTY CYCLE < 2%
50 Ω
3.3 k
0.0023 µF
0.005 µF
0.0023 µF
0.005 µF
0.1 µF
0.1 µF
VBB +–
TURN–OFF WAVEFORMS
0
10%
Vin
90%
Vout
+V =3V
– CC
toff
VBB = +12 V
Vin = –15 V
Figure 5. Turn–On and Turn–Off Time Test Circuit
6
100
TJ = 25°C
5
LIMIT
TYPICAL
Cib
SWITCHING TIMES (nsec)
CAPACITANCE (pF)
4
3
Cob
2
1
0.1
βF = 10
VCC = 10 V
VOB = 2 V
50
tr (VCC = 3 V)
20
tf
tr
VCC = 10 V
10
5
ts
td
2
0.2
0.5
1.0
2.0
REVERSE BIAS (VOLTS)
5.0
10
Figure 6. Junction Capacitance Variations
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
2
5
10
20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 7. Typical Switching Times
3
500
QT, βF = 10
VCC = 10 V
25°C
100°C
200
QT, βF = 40
t1
CHARGE (pC)
+5 V
3V
10 pF MAX
∆V
100
0
50
< 1 ns
PULSE WIDTH (t1) = 5 µs
DUTY CYCLE = 2%
QA, VCC = 10 V
QA, VCC = 3 V
20
VALUES REFER TO
IC = 10 mA TEST
270
Cs* < 4 pF
4.3 k
Figure 9. QT Test Circuit
10
2
1
5
10
20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 8. Maximum Charge Data
C < COPT
C
C=0
10 V
980
0
–4 V
COPT
500
< 1 ns
Cs* < 3 pF
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
TIME
Figure 10. Turn–Off Waveform
VCE , MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS)
t1
+6 V
Figure 11. Storage Time Equivalent Test Circuit
1.0
TJ = 25°C
0.8
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
IB, BASE CURRENT (mA)
2
5
10
20
Figure 12. Maximum Collector Saturation Voltage Characteristics
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
hFE , MINIMUM DC CURRENT GAIN
200
TJ = 125°C
VCE = 1 V
75°C
25°C
100
TJ = 25°C and 75°C
–15°C
50
–55°C
20
1
2
5
10
IC, COLLECTOR CURRENT (mA)
20
50
100
Figure 13. Minimum Current Gain Characteristics
1.0
βF = 10
TJ = 25°C
1.2
0.5
MAX VBE(sat)
1.0
COEFFICIENT (mV/ °C)
V(sat) , SATURATION VOLTAGE (VOLTS)
1.4
MIN VBE(sat)
0.8
0.6
0
APPROXIMATE DEVIATION
FROM NOMINAL
–0.5
θVC
θVB
–1.0
–55°C to +25°C
±0.15 mV/°C
25°C to 125°C
±0.15 mV/°C
±0.4 mV/°C
±0.3 mV/°C
(25°C to 125°C)
(–55°C to +25°C)
(–55°C to +25°C)
(25°C to 125°C)
–1.5
θVB for VBE(sat)
0.4
0.2
θVC for VCE(sat)
MAX VCE(sat)
1
2
5
10
20
IC, COLLECTOR CURRENT (mA)
–2.0
50
100
Figure 14. Saturation Voltage Limits
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–2.5
0
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT (mA)
80
90
100
Figure 15. Typical Temperature Coefficients
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
4. DIMENSION F APPLIES BETWEEN DIMENSION P
AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD DIAMETER
IS UNCONTROLLED IN DIMENSION P AND
BEYOND DIMENSION K MINIMUM.
5. DIMENSION E INCLUDES THE TAB THICKNESS.
(TAB THICKNESS IS 0.51(0.002) MAXIMUM).
–A–
B
E
C
SEATING
PLANE
–T–
F
L
P
K
D 3 PL
0.36 (0.014)
N
–H–
T A
M
H
M
N
2
1
M
M
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
G
3
J
CASE 22–03
(TO–206AA)
ISSUE R
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
INCHES
MIN
MAX
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
–––
0.030
0.016
0.019
0.100 BSC
0.036
0.046
0.028
0.048
0.500
–––
0.250
–––
45 _BSC
0.050 BSC
–––
0.050
MILLIMETERS
MIN
MAX
5.31
5.84
4.52
4.95
4.32
5.33
0.406
0.533
–––
0.762
0.406
0.483
2.54 BSC
0.914
1.17
0.711
1.22
12.70
–––
6.35
–––
45_BSC
1.27 BSC
–––
1.27
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6
◊
*2N2369/D*
2N2369/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data