Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage VCES 40 Vdc Collector– Base Voltage VCBO 40 Vdc Emitter– Base Voltage VEBO 4.5 Vdc IC(Peak) 500 mA Collector Current — Continuous IC 200 mA Total Device Dissipation @ TA = 25°C Derate above 25°C PD 0.36 2.06 Watt mW/°C Total Device Dissipation @ TC = 100°C Derate above 100°C PD 0.68 6.85 Watts mW/°C TJ, Tstg – 65 to +200 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 486 °C/W Thermal Resistance, Junction to Case RqJC 147 °C/W Collector Current (10 ms pulse) Operating and Storage Junction Temperature Range 2 1 CASE 22–03, STYLE 1 TO–18 (TO–206AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) V(BR)CES 40 — Vdc Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) VCEO(sus) 15 — Vdc Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CBO 40 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.5 — Vdc — — 0.4 30 ICES — 0.4 mAdc IB — 0.4 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 2N2369A Base Current (VCE = 20 Vdc, VBE = 0) 2N2369A 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. mAdc ICBO Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 40 — 120 120 (IC = 10 mAdc, VCE = 1.0 Vdc, TA = –55°C) 2N2369 20 — (IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) 2N2369A 2N2369A 20 30 — — (IC = 100 mAdc, VCE = 1.0 Vdc) 2N2369A 20 — (IC = 100 mAdc, VCE = 2.0 Vdc) 2N2369 20 — 2N2369 2N2369A — — 0.25 0.20 (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) 2N2369A 2N2369A — — 0.30 0.25 (IC = 100 mAdc, IB = 10 mAdc) Base – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) (IC = 30 mAdc, IB = 3.0 mAdc) 2N2369A — 0.50 All Types 2N2369A 2N2369A 2N2369A 0.70 0.59 — — 0.85 — 1.02 1.15 2N2369A — 1.60 fT 500 — MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.0 pF Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 4.0 pF ts — 13 ns Turn–On Time (IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc) ton — 12 ns Turn–Off Time (IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc) toff — 18 ns ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE — VCE(sat) Vdc VBE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Storage Time (IC = IB1 = 10 mAdc, IB2 = –10 mAdc) 1. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227 t1 +10.6 V 0 –1.5 V 3V < 1 ns 270 Ω 3.3 k 0 –9.15 V Cs* < 4 pF Figure 1. ton Circuit — 10 mA t1 –2 V 10 V 95 Ω +11.4 V 1k Cs* < 4 pF Figure 3. toff Circuit — 10 mA t1 10 V 0 –8.6 V 0 < 1 ns 3.3 k < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% +10.8 V 270 Ω t1 +10.75 V Cs* < 12 pF 1k < 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 µs DUTY CYCLE = 2% PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 2. ton Circuit — 100 mA 95 Ω Cs* < 12 pF 1N916 Figure 4. toff Circuit — 100 mA * Total shunt capacitance of test jig and connectors. TO OSCILLOSCOPE INPUT IMPEDANCE = 50 Ω RISE TIME = 1 ns TURN–ON WAVEFORMS Vin 0 ton Vout 90% 0.1 µF 220 Ω 10% Vout 3.3 kΩ Vin 50 Ω PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 Ω PW ≥ 300 ns DUTY CYCLE < 2% 50 Ω 3.3 k 0.0023 µF 0.005 µF 0.0023 µF 0.005 µF 0.1 µF 0.1 µF VBB +– TURN–OFF WAVEFORMS 0 10% Vin 90% Vout +V =3V – CC toff VBB = +12 V Vin = –15 V Figure 5. Turn–On and Turn–Off Time Test Circuit 6 100 TJ = 25°C 5 LIMIT TYPICAL Cib SWITCHING TIMES (nsec) CAPACITANCE (pF) 4 3 Cob 2 1 0.1 βF = 10 VCC = 10 V VOB = 2 V 50 tr (VCC = 3 V) 20 tf tr VCC = 10 V 10 5 ts td 2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 Figure 6. Junction Capacitance Variations Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 7. Typical Switching Times 3 500 QT, βF = 10 VCC = 10 V 25°C 100°C 200 QT, βF = 40 t1 CHARGE (pC) +5 V 3V 10 pF MAX ∆V 100 0 50 < 1 ns PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% QA, VCC = 10 V QA, VCC = 3 V 20 VALUES REFER TO IC = 10 mA TEST 270 Cs* < 4 pF 4.3 k Figure 9. QT Test Circuit 10 2 1 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 8. Maximum Charge Data C < COPT C C=0 10 V 980 0 –4 V COPT 500 < 1 ns Cs* < 3 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% TIME Figure 10. Turn–Off Waveform VCE , MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS) t1 +6 V Figure 11. Storage Time Equivalent Test Circuit 1.0 TJ = 25°C 0.8 IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA 0.6 0.4 0.2 0.02 0.05 0.1 0.2 0.5 1 IB, BASE CURRENT (mA) 2 5 10 20 Figure 12. Maximum Collector Saturation Voltage Characteristics 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data hFE , MINIMUM DC CURRENT GAIN 200 TJ = 125°C VCE = 1 V 75°C 25°C 100 TJ = 25°C and 75°C –15°C 50 –55°C 20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100 Figure 13. Minimum Current Gain Characteristics 1.0 βF = 10 TJ = 25°C 1.2 0.5 MAX VBE(sat) 1.0 COEFFICIENT (mV/ °C) V(sat) , SATURATION VOLTAGE (VOLTS) 1.4 MIN VBE(sat) 0.8 0.6 0 APPROXIMATE DEVIATION FROM NOMINAL –0.5 θVC θVB –1.0 –55°C to +25°C ±0.15 mV/°C 25°C to 125°C ±0.15 mV/°C ±0.4 mV/°C ±0.3 mV/°C (25°C to 125°C) (–55°C to +25°C) (–55°C to +25°C) (25°C to 125°C) –1.5 θVB for VBE(sat) 0.4 0.2 θVC for VCE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) –2.0 50 100 Figure 14. Saturation Voltage Limits Motorola Small–Signal Transistors, FETs and Diodes Device Data –2.5 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 Figure 15. Typical Temperature Coefficients 5 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS 0.51(0.002) MAXIMUM). –A– B E C SEATING PLANE –T– F L P K D 3 PL 0.36 (0.014) N –H– T A M H M N 2 1 M M STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR G 3 J CASE 22–03 (TO–206AA) ISSUE R DIM A B C D E F G H J K L M N P INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 ––– 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 ––– 0.250 ––– 45 _BSC 0.050 BSC ––– 0.050 MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.406 0.533 ––– 0.762 0.406 0.483 2.54 BSC 0.914 1.17 0.711 1.22 12.70 ––– 6.35 ––– 45_BSC 1.27 BSC ––– 1.27 Motorola reserves the right to make changes without further notice to any products herein. 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