MICROSEMI 2N2369AU

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES
LEVELS
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N2369AUBC *
2N4449
JAN
JANTX
JANTXV
JANS
* Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
2N2369A / U / UA
2N4449 / UB / UBC
VCEO
15
20
Vdc
Emitter-Base Voltage
2N2369A / U / UA
2N4449 / UB / UBC
VEBO
4.5
6.0
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Collector-Emitter Voltage
ICES
40
Vdc
PT
0.36 (1)
0.36 (1, 5)
0.50 (4)
W
Top, Tstg
-65 to +200
°C
Symbol
Value
Unit
RθJA
400
400 (5)
350
°C/W
Total Power Dissipation @
TA = +25°C
2N2369A; 2N4449
UA, UB, UBC
U
TO-18 (TO-206AA)
2N2369A
TO-46 (TO-206AB)
Operating & Storage Junction Temperature Range
2N4449
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
UA, UB, UBC
U
Note:
1.
2.
3.
4.
5.
Derate linearly 2.06 mW°/C above TA = +25°C.
Derate linearly 4.76 mW°/C above TC = +95°C.
Derate linearly 3.08 mW°/C above TC = +70°C.
Derate linearly 3.44 mW°/C above TA = +54.5°C.
Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
SURFACE MOUNT
UB & UBC
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Base Cutoff Current
VCE = 20Vdc
T4-LDS-0057 Rev. 2 (081394)
Symbol
Min.
V(BR)CEO
15
ICES
Max.
SURFACE MOUNT
UA
(UBC = Ceramic Lid Version)
Unit
Vdc
0.4
μAdc
SURFACE MOUNT
U (Dual Transistor)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
VEB = 4.5Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
Collector- Base Breakdown Voltage
VCB = 40Vdc
Collector-Base Cutoff Current
VCB = 32Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10mAdc, VCE = 0.35Vdc
IC = 30mAdc, VCE = 0.4Vdc
IC = 10mAdc, VCE = 1.0Vdc
IC = 100mAdc, VCE = 1.0Vdc
Symbol
Min.
IEBO
Max.
Unit
10
μAdc
0.25
10
ICBO
μAdc
0.2
hFE
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 30mAdc, IB = 3.0mAdc
IC = 100mAdc, IB = 10mAdc
VCE(sat)
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 30mAdc, IB = 3.0mAdc
IC = 100mAdc, IB = 10mAdc
VBE(sat)
40
30
40
20
120
120
120
120
0.20
0.25
0.45
Vdc
Vdc
0.80
0.85
0.90
1.20
Symbol
Min.
Max.
Unit
|hfe|
5.0
10
0.70
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 100MHz
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
4.0
pF
Cibo
5.0
pF
Max.
Unit
ton
12
ηs
toff
18
ηs
tS
13
ηs
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc
Turn-Off Time
IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc
Charge Storage Time
IC = 10mAdc; IB1 = 10mAdc, IB2 = 10mAdc
Symbol
Min.
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
T4-LDS-0057 Rev. 2 (081394)
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