TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Symbol VCEO VEBO VCBO VCES All UB 20 6.0 All others 15 4.5 Unit Vdc Vdc Vdc Vdc 40 40 @ TA = +250C @ TC = +250C Total Power Dissipation 2N2369A; 2N4449 0.50(1) 1.2(2) (5) All UA 0.50 1.2(2) PT (6) All UB 0.40 1.4(7) (3) All U 0.60 1.5(4) Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 2N2369A; 2N4449 All UA All UB All U Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 All UA All UB All U 1) Derate linearly 3.08 mW/0C above TA = +37.50C 2) Derate linearly 6.85 mW/0C above TC = +250C 3) Derate linearly 3.44 mW/0C above TA = +63.50C 4) Derate linearly 8.55 mW/0C above TC = +63.50C Symbol Max. RθJC 146 125 135 117 RθJA 325 350 437 291 TO-18* (TO-206AA) 2N2369A TO-46 (TO-206AB) 2N4449 Unit 0 C/mW 0 C/mW 5) Derate linearly 2.86 mW/0C above TC = +63.50C 6) Derate linearly 2.29 mW/0C above TC = +63.50C 7) Derate linearly 8.00 mW/0C above TC = +63.50C SURFACE MOUNT UA* SURFACE MOUNT UB* SURFACE MOUNT U* *See appendix A for package outline 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 15 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 20 Vdc Emitter-Base Breakdown Voltage VEB = 4.5 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc Collector-Base Breakdown Voltage VCB = 40 Vdc Collector-Base Cutoff Current VCB = 32 Vdc ICES IEBO Vdc 0.4 µAdc 10 µAdc 0.25 10 ICBO µAdc 0.2 ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 10 mAdc, VCE = 0.35 Vdc IC = 30 mAdc, VCE = 0.4 Vdc IC = 10 mAdc, VCE = 1.0 Vdc IC = 100 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc IC = 100 mAdc, IB = 10 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc IC = 100 mAdc, IB = 10 mAdc hFE 40 30 40 20 0.20 0.25 0.45 Vdc Vdc 0.80 0.85 0.90 1.20 5.0 10 VCE(sat) VBE(sat) 120 120 120 120 0.70 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz (1)Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. hfe Cobo 4.0 pF Cibo 5.0 pF t on 12 ηs off 18 ηs t 13 ηs SWITCHING CHARACTERISTICS Turn-On Time IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc Turn-Off Time IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc Charge Storage Time IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 t s 120101 Page 2 of 2