ISL70444SEH Datasheet

DATASHEET
19MHz Radiation Hardened 40V Quad Rail-to-rail
Input-output, Low-power Operational Amplifiers
ISL70444SEH
Features
The ISL70444SEH features four low-power amplifiers
optimized to provide maximum dynamic range. These op
amps feature a unique combination of rail-to-rail operation on
the input and output as well as a slew enhanced front-end that
provides ultra fast slew rates positively proportional to a given
step size; thereby increasing accuracy under transient
conditions, whether it’s periodic or momentary. They also offer
low power, low offset voltage and low temperature drift,
making it ideal for applications requiring both high DC
accuracy and AC performance. With <5µs recovery for Single
Event Transients (SET) (LETTH = 86.4MeV•cm2/mg), the
number of filtering components needed is drastically reduced.
The ISL70444SEH is also immune to single event latch-up as it
is fabricated in Intersil’s proprietary PR40 Silicon On Insulator
(SOI) process.
• Electrically screened to DLA SMD# 5962-13214
They are designed to operate over a single supply range of 2.7V
to 40V or a split supply voltage range of ±1.35V to ±20V.
Applications for these amplifiers include precision
instrumentation, data acquisition, precision power supply
controls and process controls.
The ISL70444SEH is available in a 14 Ld Hermetic Ceramic
Flatpack and die forms that operate across the temperature
range of -55°C to +125°C.
• Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
• <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
• Unity gain stable
• Rail-to-rail input and output
• Wide gain·bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz
•
•
•
•
•
Wide single and dual supply range. . . . . . . . 2.7V to 40V Max
Low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 300µV
Low current consumption (per amplifier) . . . . . . . 1.1mA, Typ
No phase reversal with input overdrive
Slew rate
- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/µs
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*
- SEB LETTH (VS = ±21V). . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SEL Immune (SOI Process)
* Product capability established by initial characterization.
Applications
Related Literature
• AN1824, ISL70444SEH Evaluation Board User’s Guide
• AN1838, Single Event Effects Testing of the ISL70444SEH,
Quad 40V Radiation Hard Precisi
• AN1870, Total Dose Testing of the ISL70444SEH Radiation
Hardened Quad Operational Amplifier
• Precision instruments
• Active filter blocks
• Data acquisition
• Power supply control
• Process control
• AN 1867, ISL70444SEH SPICE Macro-Model
• ISL70444SEH SMD 5962-13214
RF
30
100kΩ
+
RSENSE
-IN
V+
ISL70444
V+IN
10kΩ
RIN+
+
10kΩ
RREF+
100kΩ
LOAD
-
+2.7V
to 40V
VOUT
VOUT =
10 (ILOAD * RSENSE)
10
0
BIASED
-30
FIGURE 1. TYPICAL APPLICATION: SINGLE-SUPPLY, HIGH-SIDE
CURRENT SENSE AMPLIFIER
1
GROUNDED
-10
-20
VREF
June 5, 2015
FN8411.3
VS ±18V
20
VOS (µV)
RIN-
0
50
100
150
krad (Si)
200
250
300
FIGURE 2. VOS SHIFT vs HIGH DOSE RATE RADIATION
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
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ISL70444SEH
Table of Contents
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Typical Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Post High Dose Rate Radiation Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Post Low Dose Rate Radiation Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Input ESD Diode Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Output Short-circuit Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Output Phase Reversal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Unused Channel Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Die Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Die Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Interface Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Assembly Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Weight of Packaged Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lid Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21
21
21
21
Metallization Mask Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
About Intersil . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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2
FN8411.3
June 5, 2015
ISL70444SEH
Pin Configuration
ISL70444SEH
(14 LD FLATPACK)
TOP VIEW
14
OUTD
13
-IND
3
12
+IND
V+
4
11
V-
+INB
5
10
+INC
9
-INC
8
OUTC
OUTA
1
-INA
2
+INA
-INB
6
OUTB
7
A
- +
- +
B
D
+ -
+ C
Pin Descriptions
PIN NUMBER
PIN NAME
EQUIVALENT ESD CIRCUIT
1
OUTA
Circuit 2
Amplifier A output
2
-INA
Circuit 1
Amplifier A inverting input
3
+INA
Circuit 1
Amplifier A non-inverting input
4
V+
Circuit 3
Positive power supply
5
+INB
Circuit 1
Amplifier B non-inverting input
6
-INB
Circuit 1
Amplifier B inverting input
7
OUTB
Circuit 2
Amplifier B output
8
OUTC
Circuit 2
Amplifier C output
9
-INC
Circuit 1
Amplifier C inverting input
10
+INC
Circuit 1
Amplifier C non-inverting input
11
V-
Circuit 3
Negative power supply
12
+IND
Circuit 1
Amplifier D non-inverting input
13
-IND
Circuit 1
Amplifier D inverting input
14
OUTD
Circuit 2
Amplifier D output
-
E-Pad
None
V+
600Ω
E-Pad under Package (Unbiased, tied to package lid)
V+
600Ω
IN-
V-
CIRCUIT 1
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3
V+
CAPACITIVELY
TRIGGERED ESD
CLAMP
OUT
IN+
V-
DESCRIPTION
CIRCUIT 2
VCIRCUIT 3
FN8411.3
June 5, 2015
ISL70444SEH
Ordering Information
ORDERING/SMD
NUMBER (Note 2)
PART NUMBER
(Note 1)
TEMP RANGE
(°C)
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
5962F1321401VXC
ISL70444SEHVF
-55 to +125
14 Ld Flatpack
K14.C
ISL70444SEHF/PROTO
ISL70444SEHF/PROTO
-55 to +125
14 Ld Flatpack
K14.C
5962F1321401V9A
ISL70444SEHVX
-55 to +125
DIE
ISL70444SEHX/SAMPLE
ISL70444SEHX/SAMPLE
-55 to +125
DIE
ISL70444SEHEVAL1Z
Evaluation Board
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table must be used when ordering.
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ISL70444SEH
Absolute Maximum Ratings
Thermal Information
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (Note 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . 42V or V- - 0.5V to V+ + 0.5V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . 42V or V- - 0.5V to V+ + 0.5V
Max/Min Input Current for Input Voltage >V+ or <V- . . . . . . . . . . . . . . . . . ±20mA
ESD Tolerance
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per CDM-22CI0ID) . . . . . . . . . . . . . . 750V
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
14 Ld Flatpack Package (Notes 3, 4). . . . .
35
9
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Single Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . 3V ±10% to 36V ±10%
Split Rail Supply Voltage . . . . . . . . . . . . . . . . . . ±1.5V ±10% to ±18V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
4. For JC, the “case temp” location is the center of the package underside.
5. Tested in a heavy ion environment at LET = 86.4MeV•cm2/mg at +125°C (TC) for SEB. Refer to Single Event Effects Test Report for more information.
Electrical Specifications VS = ±18V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C.
PARAMETER
VOS
DESCRIPTION
TEST CONDITIONS
Offset Voltage
MIN
(Note 6)
VCM = 0V
VCM =
V+
VCM =
V+
to
VV- +
TYP
MAX
(Note 6)
UNIT
20
300
µV
80
400
µV
µV/°C
TCVOS
Offset Voltage Temperature
Coefficient
VOS
Input Offset Channel-to-channel Match VCM = V+
77
800
µV
VCM = V-
117
800
µV
VCM = 0V
189
370
nA
VCM =
V+
200
370
nA
VCM =
V-
262
650
nA
VCM =
V+
200
370
nA
VCM =
V- +
257
650
nA
VCM =
V+ to
0
17
nA
V+
V
IB
IOS
Input Bias Current
Input Offset Current
VCMIR
Common Mode Input Voltage Range
CMRR
Common Mode Rejection Ratio
- 2V to
2V
0.5
- 0.5V
0.5V
V-
-17
V-
VCM = V- to V+
VCM =
V-
to
V+
PSRR
AVOL
Power Supply Rejection Ratio
Open-loop Gain
V- = -18V; V+ = 0.5V to 18V
V+ = 18V; V- = -0.5V to -18V
dB
111
dB
128
dB
70
VCM = V+ - 0.5V to V- + 0.5V
VCM = V+ - 0.5V to V- + 0.5V
112
dB
80
dB
88
RL = 10kΩ to ground
dB
125
dB
96
VOH
VOL
ISRC
Output Voltage High (VOUT to V+)
Output Voltage Low (VOUT to
Output Short-circuit Current
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5
V -)
dB
RL = No load
78
160
mV
RL = 10kΩ
118
175
mV
RL = No load
73
160
mV
RL = 10kΩ
110
175
mV
Sourcing; VIN = 0V, VOUT = -18V
10
mA
FN8411.3
June 5, 2015
ISL70444SEH
Electrical Specifications VS = ±18V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C. (Continued)
PARAMETER
ISNK
IS
DESCRIPTION
TEST CONDITIONS
Output Short-circuit Current
Sinking; VIN = 0V, VOUT = +18V
Supply Current/Amplifier
Unity gain
MIN
(Note 6)
TYP
MAX
(Note 6)
1.5
1.75
mA
1.95
2.4
mA
10
UNIT
mA
AC SPECIFICATIONS
GBW
Gain Bandwidth Product
ACL = 101, RL = 10k
en
Voltage Noise Density
f = 10kHz
in
Current Noise Density
f = 10kHz
SR
Large Signal Slew Rate
AV = 1, RL = 10kΩVO = 10VP-P
19
MHz
11.3
nV/√Hz
0.312
pA/√Hz
60
V/µs
Electrical Specifications VS = ±2.5V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C.
PARAMETER
VOS
MAX
(Note 6)
UNIT
VCM = 0V
20
300
µV
VCM = V+ to V-
80
400
µV
TEST CONDITIONS
Offset Voltage
MIN
(Note 6)
TYP
DESCRIPTION
µV/°C
TCVOS
Offset Voltage Temperature
Coefficient
VCM = V+ - 2V to V- + 2V
0.5
VOS
Input Offset Channel-to-channel
Match
VCM = V+
79
800
119
800
µV
Input Bias Current
VCM = 0V
202
340
nA
VCM = V+
182
340
nA
VCM = V-
229
580
nA
VCM = V+ - 0.5V
181
340
nA
VCM =
V- +
224
580
nA
VCM =
V+ to V-
0
17
nA
V+
V
IB
IOS
VCMIR
CMRR
Input Offset Current
VCM =
V-
0.5V
V-
Common Mode Input Voltage Range
Common Mode Rejection Ratio
-17
VCM =
V-
to
V+
VCM = V- to V+
92
VCM = V+ - 0.5V to V- + 0.5V
PSRR
AVOL
Power Supply Rejection Ratio
Open-loop Gain
V- = -2.5V; V+ = 0.5V to 2.5V
V+ = 2.5V; V- = -0.5V to -2.5V
dB
70
VCM = V+ - 0.5V to V- + 0.5V
dB
91
dB
74
dB
123
dB
80
RL = 10kΩ to ground
dB
118
dB
90
VOH
Output Voltage High (VOUT to
V+ )
dB
RL = No load
53
RL = 10kΩ
53
RL = 600Ω
VOL
Output Voltage Low (VOUT to V-)
6
85
mV
105
mV
400
mV
RL = No load
53
85
mV
RL = 10kΩ
53
105
mV
400
mV
RL = 600Ω
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µV
FN8411.3
June 5, 2015
ISL70444SEH
Electrical Specifications VS = ±2.5V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C. (Continued)
PARAMETER
IS
DESCRIPTION
TEST CONDITIONS
Supply Current/Amplifier
MIN
(Note 6)
Unity gain
TYP
MAX
(Note 6)
1.1
1.25
mA
1.6
1.8
mA
UNIT
AC SPECIFICATIONS
GBW
Gain Bandwidth Product
ACL = 101, RL = 10k
17
MHz
Voltage Noise Density
f = 10kHz
12.3
nV/√Hz
in
Current Noise Density
f = 10kHz
0.313
pA/√Hz
SR
Large Signal Slew Rate
AV = 1, RL = 10kΩVO = 3VP-P
35
V/µs
en
Electrical Specifications VS = ±1.5V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply across
the operating temperature range, -55°C to +125°C.
PARAMETER
VOS
DESCRIPTION
TEST CONDITIONS
Offset Voltage
VCM = 0V
VCM = V+ to
VOS
IB
IOS
VCMIR
VOH
VOL
IS
MIN
(Note 6)
V-
TYP
MAX
(Note 6)
UNIT
51
300
µV
80
400
µV
79
800
µV
Input Offset Channel-to-channel
Match
VCM =
V+
VCM =
V-
119
800
µV
Input Bias Current
VCM = 0V
220
330
nA
VCM = V+
180
330
nA
VCM = V-
225
565
nA
VCM = V+ - 0.5V
180
330
nA
VCM = V- + 0.5V
223
565
nA
0
17
nA
V+
V
VCM = V+ to V-
Input Offset Current
V-
Common Mode Input Voltage Range
Output Voltage High (VOUT to
V+ )
Output Voltage Low (VOUT to
V-)
Supply Current/Amplifier
-17
RL = No load
26
39
mV
RL = 10kΩ
30
60
mV
RL = No load
26
39
mV
RL = 10kΩ
42
60
mV
Unity Gain
1.1
1.24
mA
1.57
1.8
mA
AC SPECIFICATIONS
GBW
Gain Bandwidth Product
ACL = 101, RL = 10k
16
MHz
en
Voltage Noise Density
f = 10kHz
12
nV/√Hz
in
Current Noise Density
f = 10kHz
0.312
pA/√Hz
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7
FN8411.3
June 5, 2015
ISL70444SEH
Electrical Specifications
VS = ±18V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply
across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300rad(Si)/s and across a total ionizing dose of 50krad(Si)
with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
VOS
VOS
IB
DESCRIPTION
TEST CONDITIONS
V+ to V-
TYP
MAX
(Note 6
UNIT
Offset Voltage
VCM =
400
µV
Input Offset Channel-to-channel
Match
VCM = V+
800
µV
V-
800
µV
Input Bias Current
VCM = V+
650
nA
VCM =
VCM = VIOS
MIN
(Note 6)
-650
VCM = V+ to V-
Input Offset Current
VCMIR
Common Mode Input Voltage Range
CMRR
Common Mode Rejection Ratio
VCM = V- to V+
nA
-17
17
nA
V-
V+
V
70
VCM = V- to V+
dB
VCM= V+ - 0.5V to V- + 0.5V
VCM=
PSRR
AVOL
VOH
VOL
Power Supply Rejection Ratio
Open-loop Gain
V+ -
0.5V to
V- +
0.5V
V- = -18V; V+ = 0.5V to 18V
V+ = 18V; V- = -0.5V to -18V
RL = 10kΩ to ground
Output Voltage High (VOUT to
V+ )
Output Voltage Low (VOUT to
V-)
dB
80
dB
dB
88
dB
96
dB
RL = No load
160
mV
RL = 10kΩ
175
mV
RL = No load
150
mV
RL = 10kΩ
165
mV
ISRC
Output Short-circuit Current
Sourcing; VIN = 0V, VOUT = -18V
10
mA
ISNK
Output Short-circuit Current
Sinking; VIN = 0V, VOUT = +18V
10
mA
IS
Supply Current/Amplifier
Unity gain
SR
Large Signal Slew Rate
AV = 1, RL = 10kΩ, VO = 10VP-P
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8
2.4
60
mA
V/µs
FN8411.3
June 5, 2015
ISL70444SEH
Electrical Specifications VS = ±2.5V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply a
total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300rad(Si)/s and across a total ionizing dose of 50krad(Si) with
exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
VOS
VOS
IB
DESCRIPTION
TEST CONDITIONS
TYP
V+ to V-
MAX
(Note 6)
UNIT
Offset Voltage
VCM =
400
µV
Input Offset Channel-to-channel
Match
VCM = V+
800
µV
V-
800
µV
Input Bias Current
VCM = V+
650
nA
VCM =
VCM = VIOS
MIN
(Note 6)
-650
VCM = V+ to V-
Input Offset Current
VCMIR
Common Mode Input Voltage Range
CMRR
Common Mode Rejection Ratio
nA
-17
17
nA
V-
V+
V
VCM = V- to V+
VCM =
V-
to
dB
V+
70
dB
VCM= V+ - 0.5V to V- + 0.5V
VCM=
V+ -
PSRR
AVOL
VOH
VOL
IS
Power Supply Rejection Ratio
Open-loop Gain
0.5V to
V- +
0.5V
V- = -2.5V; V+ = 0.5V to 2.5V
V+ = 2.5V; V- = -0.5V to -2.5V
RL = 10kΩ to ground
Output Voltage High (VOUT to
Output Voltage Low (VOUT to
V+ )
V-)
Supply Current/Amplifier
dB
74
dB
dB
80
dB
90
dB
RL = No load
85
mV
RL = 10kΩ
105
mV
RL = 600Ω
400
mV
RL = No load
85
mV
RL = 10kΩ
105
mV
RL = 600Ω
400
mV
Unity gain
1.8
mA
Electrical Specifications VS = ±1.5V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply a
total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300rad(Si)/s and across a total ionizing dose of 50krad(Si) with
exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
VOS
VOS
IB
IOS
VCMIR
VOH
VOL
IS
Offset Voltage
Input Offset Channel-to-Channel
Match
Input Bias Current
Input Offset Current
UNIT
VCM =
V+ to V-
400
µV
VCM =
V+
800
µV
VCM = V-
800
µV
VCM =
V+
650
nA
VCM =
V-
VCM =
V+
TEST CONDITIONS
Output Voltage Low (VOUT to V-)
Supply Current/Amplifier
TYP
-650
to
V-
nA
-17
17
nA
V-
V+
V
RL = No load
160
mV
RL = 10kΩ
175
mV
RL = No load
150
mV
RL = 10kΩ
165
mV
Unity gain
1.8
mA
Common Mode Input Voltage Range
Output Voltage High (VOUT to V+)
MIN
(Note 6)
MAX
(Note 6)
DESCRIPTION
NOTE:
6. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
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9
FN8411.3
June 5, 2015
ISL70444SEH
Typical Performance Curves
Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C.
120
300
200
80
60
100
IBIAS (nA)
OFFSET VOLTAGE (µV)
100
40
20
0
0
-100
-20
-200
-40
-60
-20
-15
-10
-5
0
5
10
15
-300
-20
20
-15
-10
COMMON MODE VOLTAGE (V)
FIGURE 3. OFFSET VOLTAGE vs COMMON MODE VOLTAGE
250
250
5
10
15
20
IB+
200
IB+
200
CURRENT (nA)
CURRENT (nA)
0
FIGURE 4. IBIAS vs COMMON MODE VOLTAGE
300
150
IB-
100
IB-
150
100
50
50
0
-100
-5
COMMON MODE VOLTAGE (V)
-50
0
50
TEMPERATURE (°C)
100
0
-100
150
-50
0
50
100
150
TEMPERATURE (°C)
FIGURE 6. IBIAS vs TEMPERATURE (VS = ±2.5V)
FIGURE 5. IBIAS vs TEMPERATURE (VS = ±18V)
2.5
300
IB+
2.0
200
CURRENT (nA)
CURRENT (nA)
250
IB150
100
IOS
1.0
0.5
50
0
-100
1.5
-50
0
50
100
TEMPERATURE (°C)
FIGURE 7. IBIAS vs TEMPERATURE, (VS = ±1.5V)
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10
150
0
-100
-50
0
50
100
150
TEMPERATURE (°C)
FIGURE 8. IOS vs TEMPERATURE (VS = ±18V)
FN8411.3
June 5, 2015
ISL70444SEH
Typical Performance Curves
Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C. (Continued)
3.5
2.5
3.0
CURRENT (nA)
CURRENT (nA)
2.0
1.5
IOS
1.0
0.5
0
-100
2.5
2.0
IOS
1.5
1.0
0.5
-50
0
50
100
0
-100
150
-50
TEMPERATURE (°C)
70
70
60
60
50
50
40
VOS
20
10
0
-100
50
100
150
FIGURE 10. IOS vs TEMPERATURE (VS = ±1.5V)
VOLTAGE (µV)
VOLTAGE (µV)
FIGURE 9. IOS vs TEMPERATURE (VS = ±2.5V)
30
0
TEMPERATURE (°C)
40
VOS
30
20
10
-50
0
50
100
0
-100
150
-50
TEMPERATURE (°C)
0
50
100
150
TEMPERATURE (°C)
FIGURE 11. VOS vs TEMPERATURE (VS = ±18V)
FIGURE 12. VOS vs TEMPERATURE (VS = ±2.5V)
135
50
130
±18V
40
GAIN (dB)
VOLTAGE (µV)
125
30
VOS
20
120
115
±1.5V
110
±2.5V
10
0
-100
105
-50
0
50
100
TEMPERATURE (°C)
FIGURE 13. VOS vs TEMPERATURE (VS = ±1.5V)
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11
150
100
-75
-25
25
75
TEMPERATURE (°C)
125
FIGURE 14. AVOL vs TEMPERATURE vs SUPPLY VOLTAGE
FN8411.3
June 5, 2015
ISL70444SEH
Typical Performance Curves
Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C. (Continued)
0.0
+25°C
+125°C
2.0
-55°C
CURRENT (mA)
CURRENT (mA)
-0.5
2.5
-1.0
-1.5
-2.0
+25°C
1.5
1.0
-55°C
0.5
+125°C
-2.5
0
10
20
30
SUPPLY DIFFERENTIAL
(V+
TO
V -)
0.0
40
135
135
130
130
±18V
125
120
115
±18V
±2.5V
±1.5V
120
115
110
110
105
105
100
-75
-25
25
75
±1.5V
100
-75
125
-25
TEMPERATURE (°C)
25
75
TEMPERATURE (°C)
125
FIGURE 17. PSRR+ vs TEMPERATURE vs SUPPLY VOLTAGE
FIGURE 18. PSRR- vs TEMPERATURE vs SUPPLY VOLTAGE
120
70
110
60
CURRENT (mA)
±18V
100
GAIN (dB)
40
±2.5V
GAIN (dB)
125
10
20
30
SUPPLY DIFFERENTIAL (V+ TO V-) (V)
FIGURE 16. POSITIVE SUPPLY CURRENT vs SUPPLY VOLTAGE
FIGURE 15. NEGATIVE SUPPLY CURRENT vs SUPPLY VOLTAGE
GAIN (dB)
0
(V)
90
80
±2.5V
±1.5V
70
50
30
60
20
50
10
40
-75
-25
25
75
125
TEMPERATURE (°C)
FIGURE 19. CMRR vs TEMPERATURE vs SUPPLY VOLTAGE
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±15V
±5V
±18V
40
0
-75
±2.5V
±1.5V
-25
25
75
TEMPERATURE (°C)
125
FIGURE 20. SHORT-CIRCUIT CURRENT vs TEMPERATURE
FN8411.3
June 5, 2015
ISL70444SEH
Typical Performance Curves
Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C. (Continued)
50
70
RL = 2kΩ
60
30
(VS+ - VOUT) (mV)
(VS+ - VOUT) (mV)
40
RL = 10kΩ
20
RL = OPEN
10
RL = 2kΩ
50
40
RL = 10kΩ
30
20
RL = OPEN
10
0
-75
-25
25
75
TEMPERATURE (°C)
125
0
-75
175
-25
25
75
TEMPERATURE (°C)
125
175
FIGURE 22. (VS = ±2.5V) VOH vs TEMPERATURE
FIGURE 21. (VS = ±1.5V) VOH vs TEMPERATURE
350
50
300
200
(VS- + VOUT) (mV)
(VS+ - VOUT) (mV)
40
250
RL = 2kΩ
150
100
RL = OPEN
RL = 10kΩ
30
RL = 10kΩ
20
10
50
0
-75
RL = 2kΩ
RL = OPEN
-25
25
75
125
0
-75
175
-25
TEMPERATURE (°C)
70
350
60
300
RL = 2kΩ
50
40
RL = 10kΩ
30
125
175
FIGURE 24. (VS = ±1.5V) VOL vs TEMPERATURE
(VS- - VOUT) (mV)
(VS- + VOUT) (mV)
FIGURE 23. (VS = ±18V) VOH vs TEMPERATURE
25
75
TEMPERATURE (°C)
20
10
RL = 2kΩ
250
200
150
100
RL = 10kΩ
RL = OPEN
50
RL = OPEN
0
-75
-25
25
75
TEMPERATURE (°C)
125
FIGURE 25. (VS = ±2.5V) VOL vs TEMPERATURE
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13
175
0
-75
-25
25
75
TEMPERATURE (°C)
125
175
FIGURE 26. (VS = ±18V) VOL vs TEMPERATURE
FN8411.3
June 5, 2015
ISL70444SEH
Typical Performance Curves
Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C. (Continued)
10
INPUT NOISE CURRENT (pA/√Hz)
INPUT NOISE VOLTAGE (nV/√Hz)
10,000
1,000
100
10
1
0.01
0.1
1
10
100
FREQUENCY (Hz)
1k
10k
1
0.1
0.1
100k
1
10
100
1k
FREQUENCY (Hz)
10k
100k
FIGURE 27. INPUT NOISE VOLTAGE SPECTRAL DENSITY (VS = ±18V)
FIGURE 28. INPUT NOISE CURRENT SPECTRAL DENSITY (VS = ±18V)
150
150
150
100
0
-50
GAIN
-100
-50
-150
-100
-200
SIMULATION
-150
0
10
1k
100k
FREQUENCY (Hz)
10M
-250
1G
GAIN (dB)
0
100
50
0
0
-50
GAIN
-50
-100
-150
-200
-100
-250
SIMULATION
-150
0
10
1k
100k
FREQUENCY (Hz)
10M
250
250
150
200
PHASE
100
0
-50
GAIN
100
50
-100
-50
-150
-200
-100
SIMULATION
0
10
GAIN (dB)
50
0
-150
150
100
PHASE (°)
GAIN (dB)
200
PHASE
100
150
50
50
0
0
10M
-300
1G
FIGURE 31. OPEN LOOP FREQUENCY RESPONSE (CL = 22pF)
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-50
GAIN
-100
-50
-150
-200
-100
-250
1k
100k
FREQUENCY (Hz)
-300
1G
FIGURE 30. OPEN LOOP FREQUENCY RESPONSE (CL = 10pF)
FIGURE 29. OPEN LOOP FREQUENCY RESPONSE (CL = 0.01pF)
150
150
50
50
PHASE (°)
GAIN (dB)
50
200
PHASE
100
PHASE (°)
100
250
PHASE (°)
200
PHASE
-250
SIMULATION
-150
0
10
1k
100k
FREQUENCY (Hz)
10M
-300
1G
FIGURE 32. OPEN LOOP FREQUENCY RESPONSE (CL = 47pF)
FN8411.3
June 5, 2015
ISL70444SEH
Typical Performance Curves
Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C. (Continued)
250
150
200
PHASE
100
150
0
0
-50
GAIN
-50
-100
GAIN (dB)
GAIN (dB)
50
PHASE (°)
100
50
-150
-200
-100
SIMULATION
-150
0
10
-250
1k
100k
FREQUENCY (Hz)
-300
1G
10M
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
-10
100
±2.5V
1k
10M
100M
60
50
G = 1000
40
±1.5V
30
±18V
G = 100
20
G = 10
10
0
-10
G=1
-20
-30
-40
±2.5V
100
1k
10k
100k
1M
10M
-50
100
100M
1k
FREQUENCY (Hz)
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FIGURE 35. PSRR vs FREQUENCY
FIGURE 36. FREQUENCY RESPONSE vs CLOSED LOOP GAIN
20
10
RF = 10kΩ
10
0
0
-10
RF = 100Ω
-20
GAIN (dB)
GAIN (dB)
10k
100k
1M
FREQUENCY (Hz)
70
GAIN (dB)
GAIN (dB)
±18V
FIGURE 34. CMRR vs FREQUENCY
FIGURE 33. OPEN LOOP FREQUENCY RESPONSE (CL = 100pF)
120
110
100
90
80
70
60
50
40
30
20
10
0
-10
±1.5V
RF = 1kΩ
-30
-40
RL = 5kΩ
RL = 2kΩ
RL = 10kΩ
-10
RL = 1kΩ
-20
-50
-60
-70
100
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FIGURE 37. FREQUENCY RESPONSE vs FEEDBACK RESISTANCE (RF)
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15
-30
100
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FIGURE 38. FREQUENCY RESPONSE vs LOAD RESISTANCE
FN8411.3
June 5, 2015
ISL70444SEH
Typical Performance Curves
Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C. (Continued)
10
10
0
0
12pF
27pF
-20
GAIN (dB)
GAIN (dB)
-10
47pF
68pF
-30
-50
100
±2.5V
±18V
-20
-30
ACL = 1
RL = 10kΩ
VS= ±18V
-40
±1.5V
-10
1k
10k
100k
1M
10M
-40
100M
100
1k
10k
±1.5V
25
15
+25°C
10
1k
10k
100k
1M
FREQUENCY (Hz)
10M
0
0.0
100M
70
400
60
350
+125°C
40
-55°C
+25°C
20
0.5
1.0
1.5
2.0
STEP SIZE (V)
2.5
3.0
3.5
FIGURE 42. SLEW RATE vs STEP SIZE vs TEMPERATURE (VS = ±1.5V)
450
50
+125°C
20
5
SLEW RATE (V/µs)
SLEW RATE (V/µs)
100M
-55°C
30
±2.5V
SLEW RATE (V/µs)
GAIN (dB)
±18V
80
-55°C
300
+25°C
250
+125°C
200
150
100
10
0
10M
35
FIGURE 41. CROSSTALK REJECTION
30
1M
FIGURE 40. FREQUENCY RESPONSE vs SUPPLY VOLTAGE
FIGURE 39. UNITY GAIN RESPONSE vs LOAD CAPACITANCE
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
100
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
50
0
1
2
3
STEP SIZE (V)
4
5
6
FIGURE 43. SLEW RATE vs STEP SIZE vs TEMPERATURE (VS = ±2.5V)
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16
0
0
5
10
15
STEP SIZE (V)
20
25
FIGURE 44. SLEW RATE vs STEP SIZE vs TEMPERATURE (VS = ±18V)
FN8411.3
June 5, 2015
ISL70444SEH
Typical Performance Curves
Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C. (Continued)
(INPUT)
200mV/DIV
(INPUT)
200mV/DIV
(OUTPUT)
AV = -100
RL = 2kΩ
RF = 100kΩ, RG = 1kΩ
VIN = 400mVP-P
(OUTPUT)
AV = -100
RL = 1kΩ
RF = 100kΩ, RG = 1kΩ
VIN = 400mVP-P
VS = ±18V
1µs/DIV
VS = ±5V
1µs/DIV
FIGURE 46. SATURATION RECOVERY (VS = ±5V)
FIGURE 45. SATURATION RECOVERY (VS = ±18V)
40
VS = ±18V
35
(INPUT)
200mV/DIV
RL = 10kΩ
OVERSHOOT (%)
30
AV = -100
RL = 2kΩ
RF = 100kΩ, RG = 1kΩ
VIN = 400mVP-P
AV = 1
OS-
VOUT = 25mVP-P
25
20
OS+
15
(OUTPUT)
10
VS = ±2.5V
5
0
1
10
CAPACITANCE (pF)
1µs/DIV
FIGURE 47. SATURATION RECOVERY (VS = ±2.5V)
100
FIGURE 48. OVERSHOOT (%) vs LOAD CAPACITANCE
2V/DIV, INPUT
2V/DIV, OUTPUT
No Output Phase Reversal
VS = ±5V
VIN = 12VP-P
10µs/DIV
FIGURE 49. INPUT OVERDRIVE RESPONSE
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FN8411.3
June 5, 2015
ISL70444SEH
Post High Dose Rate Radiation Characteristics
Unless otherwise specified, VS ± 18V,
VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended
to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.
30
30
VS = ±18V
20
GROUNDED
CURRENT (nA)
VOS (µV)
10
0
-10
BIASED
-20
-30
0
50
100
10
0
BIASED
-10
-20
150
krad (Si)
200
250
-30
300
0
50
100
150
krad (Si)
200
250
300
FIGURE 51. IBIAS SHIFT vs HIGH DOSE RATE RADIATION
FIGURE 50. VOS SHIFT vs HIGH DOSE RATE RADIATION
0.8
0.8
VS = ±18V
0.6
CURRENT (mA)
0.4
0.2
0
GROUNDED
-0.2
0
-0.2
-0.4
-0.6
-0.6
-0.8
50
100
150
krad (Si)
200
250
-0.8
300
GROUNDED
0.2
-0.4
0
VS = ±18V
0.6
BIASED
0.4
CURRENT (mA)
VS = ±18V
GROUNDED
20
BIASED
0
50
100
150
200
250
300
krad (Si)
FIGURE 53. I+ SHIFT vs HIGH DOSE RATE RADIATION
FIGURE 52. I- SHIFT vs HIGH DOSE RATE RADIATION
2.0
VS = ±18V
1.5
CURRENT (nA)
1.0
BIASED
0.5
0
-0.5
GROUNDED
-1.0
-1.5
-2.0
0
50
100
150
krad (Si)
200
250
300
FIGURE 54. IOS SHIFT vs HIGH DOSE RATE RADIATION
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FN8411.3
June 5, 2015
ISL70444SEH
Post Low Dose Rate Radiation Characteristics
Unless otherwise specified, VS ± 18V, VCM = 0,
VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical
parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.
30
30
VS = ±18V
VS = ±18V
20
20
GROUNDED
VOS (µV)
CURRENT (nA)
BIASED
10
0
-10
GROUNDED
0
0
10
20
30
40
50
60
krad (Si)
70
80
90
-30
100
0
10
30
40
50
60
krad (Si)
70
80
90
100
0.8
6
VS = ±18V
VS = ±18V
0.6
4
0.4
CURRENT (mA)
BIASED
2
0
-2 GROUNDED
0.2 GROUNDED
0
-0.2
-0.4
-4
-6
20
FIGURE 56. IBIAS SHIFT vs LOW DOSE RATE RADIATION
FIGURE 55. VOS SHIFT vs LOW DOSE RATE RADIATION
CURRENT (nA)
BIASED
-10
-20
-20
-30
10
BIASED
-0.6
0
10
20
30
40
50
60
krad (Si)
70
80
90
-0.8
100
0
10
20
30
40
50
60
krad (Si)
70
80
90
100
FIGURE 58. I+ SHIFT vs LOW DOSE RATE RADIATION
FIGURE 57. IOS SHIFT vs LOW DOSE RATE RADIATION
0.8
VS = ±18V
0.6
BIASED
CURRENT (mA)
0.4
0.2
0
GROUNDED
-0.2
-0.4
-0.6
-0.8
0
10
20
30
40
50
60
krad (Si)
70
80
90
100
FIGURE 59. I- SHIFT vs LOW DOSE RATE RADIATION
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FN8411.3
June 5, 2015
ISL70444SEH
Applications Information
Functional Description
The ISL70444SEH contains four high speed and low power op
amps designed to take advantage of its full dynamic input and
output voltage range with rail-to-rail operation. By offering low
power, low offset voltage and low temperature drift coupled with
its high bandwidth and enhanced slew rates upwards of 50V/µs,
these op amps are ideal for applications requiring both high DC
accuracy and AC performance. The ISL70444SEH is manufactured
in Intersil’s PR40 silicon-on-insulator process, which makes this
device immune to single event latch-up and provides excellent
radiation tolerance. This makes it the ideal choice for high
reliability applications in harsh radiation-prone environments.
Figure 20 shows the typical short-circuit currents that can be
expected. The ISL70444SEH’s current limiting circuitry will
automatically lower the current limit of the device if short-circuit
conditions carry on for extended periods of times. This protects
the device from malfunction, however extended operation in this
mode will degrade the output rail-to-rail performance by
increasing the VOH/VOL levels.
Output Phase Reversal
Output phase reversal is a change of polarity in the amplifier
transfer function when the input voltage exceeds the supply
voltage. The ISL70444SEH is immune to output phase reversal,
even when the input voltage is 1V beyond the supplies. This is
illustrated in Figure 49.
Power Dissipation
Operating Voltage Range
This device is designed to operate with a split supply rail from
±1.35V to ±20V or a single supply rail from 2.7V to 40V. The
ISL70444SEH is fully characterized in production for supply rails of
5V (±2.5V) and 36V (±18V). The power supply rejection ratio is
typically 120dB over the full operating voltage range. The worst
case common mode rejection ratio across temperature is within
1.5V to 2V of each rail. When VCM is inside that range, the CMRR
performance is typically >110dB with a ±18V supply. The
minimum CMRR performance across the -55°C to +125°C
temperature range and radiation is >70dB over the full common
mode input range for power supply voltages from ±2.5V (5V) to
±18V (36V).
It is possible to exceed the +150°C maximum junction
temperatures under certain load and power supply conditions. It
is therefore important to calculate the maximum junction
temperature (TJMAX) for all applications to determine if power
supply voltages, load conditions or package type need to be
modified to remain in the safe operating area. These parameters
are related using Equation 1:
(EQ. 1)
T JMAX = T MAX +  JA x PD MAXTOTAL
Where:
• PDMAXTOTAL is the sum of the maximum power dissipation of
each amplifier in the package (PDMAX)
Input Performance
• PDMAX for each amplifier can be calculated using Equation 2:
The slew enhanced front-end is a block that is placed in parallel
with the main input stage and functions based on the input
differential.
V OUTMAX
PD MAX = V S  I qMAX +  V S - V OUTMAX   ---------------------------R
Input ESD Diode Protection
L
(EQ. 2)
Where:
• TMAX = Maximum ambient temperature
The input terminals (IN+ and IN-) have internal ESD protection
diodes to the positive and negative supply rails, series connected
600Ω current limiting resistors and an anti-parallel diode pair
across the inputs.
V+
• JA = Thermal resistance of the package
• PDMAX = Maximum power dissipation of 1 amplifier
• VS = Total supply voltage
• IqMAX = Maximum quiescent supply current of 1 amplifier
• VOUTMAX = Maximum output voltage swing of the application
- 600Ω
VIN
VOUT
+ 600Ω
RL
V-
FIGURE 60. INPUT ESD DIODE CURRENT LIMITING, UNITY GAIN
Output Short-circuit Current Limiting
The output current limit has a worst case minimum limit of
±8mA but may reach as high as ±100mA. The op amp can
withstand a short-circuit to either rail for a short duration
(<1s) as long as the maximum operating junction temperature is
not violated. This applies to only one amplifier at a given time.
Continued use of the device in these conditions may degrade the
long term reliability of the part and is not recommended.
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20
Unused Channel Configuration
The ISL70444SEH is a quad op amp. If the application does not
require the use of all four op amps, the user must configure the
unused channels to prevent it from oscillating. Any unused
channels will oscillate if the input and output pins are floating. This
results in higher than expected supply currents and possible noise
injection into any of the active channels being used. The proper
way to prevent oscillation is to short the output to the inverting
input and ground the positive input (Figure 61).
+
FIGURE 61. PREVENTING OSCILLATIONS IN UNUSED CHANNELS
FN8411.3
June 5, 2015
ISL70444SEH
Die Characteristics
Die Dimensions
Assembly Related Information
SUBSTRATE POTENTIAL
2410µm x 3175µm (95mils x 125mils)
Thickness: 483µm ± 25µm (19mils ± 1 mil)
Interface Materials
Floating
Additional Information
WORST CASE CURRENT DENSITY
GLASSIVATION
< 2 x 105 A/cm2
Type: Nitrox
Thickness: 15kÅ
TRANSISTOR COUNT
730
TOP METALLIZATION
Weight of Packaged Device
Type: AlCu (99.5%/0.5%)
Thickness: 30kÅ
0. 5952 Grams (Typical)
Lid Characteristics
BACKSIDE FINISH
Silicon
Finish: Gold
Potential: Unbiased, tied to E-pad under package
Case Isolation to Any Lead: 20 x 109 Ω (min)
PROCESS
PR40
Metallization Mask Layout
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21
FN8411.3
June 5, 2015
ISL70444SEH
TABLE 1. DIE LAYOUT X-Y COORDINATES
X
(µm)
Y
(µm)
dX
(µm)
dY
(µm)
BOND WIRES
PER PAD
PAD NAME
PAD NUMBER
OUTB
2
599.0
-11.5
70
70
1
OUTC
3
1472.0
-11.5
70
70
1
-INC
4
2071.0
0.0
70
70
1
+INC
12
2071.0
347.5
70
70
1
V-
20
2071.0
1406.5
70
70
1
+IND
21
2071.0
2465.5
70
70
1
-IND
22
2071.0
2813.0
70
70
1
OUTD
23
1472.0
2824.5
70
70
1
OUTA
24
599.0
2824.5
70
70
1
-INA
25
0.0
2813.0
70
70
1
+INA
33
0.0
2465.5
70
70
1
V+
41
0.0
1406.5
70
70
1
+INB
42
0.0
347.5
70
70
1
-INB
1
0.0
0.0
70
70
1
NOTE:
7. Origin of coordinates is the centroid of pad 42, “IN-B”.
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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FN8411.3
June 5, 2015
ISL70444SEH
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
CHANGE
June 5, 2015
FN8411.3
Changed Die Dimensions on page 21:
From
2410µm x 3175µm (80mils x 101mils)
Thickness: 483µm ± 25µm (19mils ± 1 mil)
To:
Die Dimensions
2410µm x 3175µm (95mils x 125mils)
Thickness: 483µm ± 25µm (19mils ± 1 mil)
July 31, 2014
FN8411.2
On page 1: Updated Features bullet from:
- SEL/SEB LETTH. . . . . . . . . . . . . . . . . . . . 86.4MeVocm2/mg
To:
- SEB LETTH (VS = ±21V). . . . . . . . . . . . . . . . 86.4 MeV/mg/cm2
- SEL Immune (SOI Process)
Ordering Information table on page 4: Removed MSL note.
Updated About Intersil verbiage.
June 14, 2013
FN8411.1
Changed Radiation tolerance High dose rate from 100krad(Si) to 300krad(Si) on page 1 features and in
Electrical Spec Table conditions on pages 7 and 8.
Added SR spec for VS = ±18V to Electrical Spec Table on page 8.
Removed Max limit of 300 for VOS Offset Voltage in VS = ±18V, VS = ±2.5V and VS = ±1.5V Spec tables.
May 23, 2013
FN8411.0
Initial Release.
About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.
Reliability reports are also available from our website at www.intersil.com/support
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23
FN8411.3
June 5, 2015
ISL70444SEH
Package Outline Drawing
K14.C
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
Rev 0, 9/12
A
A
0.050 (1.27 BSC)
PIN NO. 1
ID AREA
0.390 (9.91)
0.376 (9.55)
1
TOP VIEW
0.022 (0.56)
0.005 (0.13)
MIN
3
0.015 (0.38)
0.115 (2.92)
0.009 (0.23)
0.045 (1.14)
0.085 (2.16)
0.026 (0.66)
5
0.260 (6.60)
0.248 (6.30)
-C-
BOTTOM
METAL
0.183 (4.65)
0.370 (9.40)
0.167 (4.24)
0.270 (6.86)
-H-
0.03 (0.76) MIN
6
SEATING AND
BASE PLANE
0.004 (0.10)
-D-
SIDE VIEW
BOTTOM METAL
0.005 (0.127) REF.
OFFSET FROM
CERAMIC EDGE
OPTIONAL
PIN 1 INDEX
BOTTOM VIEW
NOTES:
0.006 (0.15)
1. Index area: A notch or a pin one identification mark shall be located
adjacent to pin one and shall be located within the shaded area shown.
The manufacturer’s identification shall not be used as a pin one
identification mark.
LEAD FINISH
0.004 (0.10)
2. The maximum limits of lead dimensions (section A-A) shall be
measured at the centroid of the finished lead surfaces, when solder
dip or tin plate lead finish is applied.
BASE
METAL
0.019 (0.48)
0.015 (0.38)
0.0015 (0.04)
MAX
24
4. For bottom-brazed lead packages, no organic or polymeric materials
shall be molded to the bottom of the package to cover the leads.
6. The bottom of the package is a solderable metal surface.
2
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3. Measure dimension at all four corners.
5. Dimension shall be measured at the point of exit (beyond the
meniscus) of the lead from the body. Dimension minimum shall
be reduced by 0.0015 inch (0.038mm) maximum when solder dip
lead finish is applied.
0.022 (0.56)
0.015 (0.38)
SECTION A-A
0.009 (0.23)
0.004 (0.10)
7. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
8. Dimensions: INCH (mm). Controlling dimension: INCH.
FN8411.3
June 5, 2015