EL5611, EL5811 ® Data Sheet August 3, 2005 60MHz Rail-to-Rail Input-Output VCOM Amplifiers The EL5611 and EL5811 are low power, high voltage rail-torail input-output amplifiers targeted primarily at VCOM applications in TFT-LCD displays. The EL5611 contains six amplifiers, and the EL5811 contains eight amplifiers. Operating on supplies ranging from 5V to 15V, while consuming only 2.5mA per amplifier, the EL5611 and EL5811 have a bandwidth of 60MHz (-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these amplifiers to offer maximum dynamic range at any supply voltage. The EL5611 and EL5811 also feature fast slewing and settling times, as well as a high output drive capability of 65mA (sink and source). In addition to VCOM applications, these features make these amplifiers ideal for high speed filtering and signal conditioning application. Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5611 is available in 8-pin MSOP and 8-pin HMSOP packages. The EL5811 is available in space-saving 28-pin HTSSOP packages.These amplifiers operate over a temperature range of -40°C to +85°C. FN7355.1 Features • 60MHz -3dB bandwidth • Supply voltage = 4.5V to 16.5V • Low supply current (per amplifier) = 2.5mA • High slew rate = 75V/µs • Unity-gain stable • Beyond the rails input capability • Rail-to-rail output swing • ±180mA output short current • Pb-Free plus anneal available (RoHS compliant) Applications • TFT-LCD panels • VCOM amplifiers • Drivers for A-to-D converters • Data acquisition • Video processing • Audio processing • Active filters • Test equipment • Battery-powered applications • Portable equipment Ordering Information (Continued) Ordering Information PACKAGE TAPE & REEL PKG. DWG. # PART NUMBER PACKAGE EL5611IRE 24-Pin HTSSOP - MDP0048 EL5611IRE-T7 24-Pin HTSSOP 7” MDP0048 EL5811IREZ-T13 (See Note) 28-Pin HTSSOP (Pb-Free) EL5611IRE-T13 24-Pin HTSSOP 13” MDP0048 EL5811IREZ (See Note) 28-Pin HTSSOP (Pb-free) - MDP0048 EL5811IREZ-T7 (See Note) 28-Pin HTSSOP (Pb-free) 7” MDP0048 EL5811IREZ-T13 (See Note) 28-Pin HTSSOP (Pb-free) 13” MDP0048 EL5811IREZ (See Note) 28-Pin HTSSOP (Pb-Free) - MDP0048 EL5811IREZ-T7 (See Note) 28-Pin HTSSOP (Pb-Free) 7” MDP0048 PART NUMBER 1 TAPE & REEL PKG. DWG. # 13” MDP0048 NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2004, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners. EL5611, EL5811 Pinouts EL5611 (24-PIN HTSSOP) TOP VIEW VOUTA 1 24 VDD VINA- 2 23 VOUTF EL5811 (28-PIN HTSSOP) TOP VIEW VDD 1 28 VINH+ VINA+ 2 27 VINH- VINA+ 3 22 VINF- VINA- 3 26 VOUTH VSS 4 21 VINF+ VOUTA 4 25 VOUTG 20 VOUTE VOUTB 5 24 VING23 VING+ VOUTB 5 VINB- 6 19 VINE- VINB- 6 VINB+ 7 18 VINE+ VINB+ 7 22 VSS 17 VSS VINC+ 8 21 VSS VDD 8 VINC+ 9 16 VOUTD+ VINC- 9 20 VINF+ VINC- 10 15 VOUTD- VOUTC 10 19 VINF- 14 VOUTD VOUTD 11 18 VOUTF VIND- 12 17 VOUTE VOUTC 11 NC 12 13 NC 2 VIND+ 13 16 VINE- VDD 14 15 VINE+ FN7355.1 August 3, 2005 EL5611, EL5811 Absolute Maximum Ratings (TA = 25°C) Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS +0.5V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 1kΩ to 0V, TA = 25°C, Unless Otherwise Specified DESCRIPTION CONDITIONS MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 1) IB Input Bias Current RIN Input Impedance 1 GΩ CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -5.5V to 5.5V 50 70 dB AVOL Open-Loop Gain -4.5V ≤ VOUT ≤ 4.5V 62 70 dB VCM = 0V 7 VCM = 0V 2 -5.5 µV/°C 60 +5.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT -4.92 4.85 -4.85 V 4.92 V Short-Circuit Current ±180 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V IS Supply Current (Per Amplifier) No load 2.5 60 3.75 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) -4.0V ≤ VOUT ≤ 4.0V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.17 % dP Differential Phase (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.24 ° NOTES: 1. Measured over operating temperature range. 2. Slew rate is measured on rising and falling edges. 3. NTSC signal generator used. 3 FN7355.1 August 3, 2005 EL5611, EL5811 Electrical Specifications PARAMETER VS+ = +5V, VS- = 0V, RL = 1kΩ to 2.5V, TA = 25°C, Unless Otherwise Specified DESCRIPTION CONDITION MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 4) IB Input Bias Current RIN Input Impedance 1 GΩ CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 5.5V 45 66 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 4.5V 62 70 dB VCM = 2.5V 7 VCM = 2.5V 2 -0.5 µV/°C 60 +5.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT 80 4.85 150 mV 4.92 V Short-circuit Current ±180 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Amplifier) No load 2.5 60 3.75 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 5) 1V ≤ VOUT ≤ 4V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 6) RF = RG = 1kΩ and VOUT = 1.4V 0.17 % dP Differential Phase (Note 6) RF = RG = 1kΩ and VOUT = 1.4V 0.24 ° NOTES: 4. Measured over operating temperature range. 5. Slew rate is measured on rising and falling edges. 6. NTSC signal generator used. 4 FN7355.1 August 3, 2005 EL5611, EL5811 Electrical Specifications PARAMETER VS+ = +15V, VS- = 0V, RL = 1kΩ to 7.5V, TA = 25°C, Unless Otherwise Specified DESCRIPTION CONDITION MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 7) IB Input Bias Current RIN Input Impedance 1 GΩ CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 15.5V 53 72 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 14.5V 62 70 dB VCM = 7.5V 7 VCM = 7.5V 2 -0.5 µV/°C 60 nA +15.5 V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT 80 14.85 150 mV 14.92 V Short-circuit Current ±180 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current (Per Amplifier) No load 2.5 60 3.75 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 8) 1V ≤ VOUT ≤ 14V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 9) RF = RG = 1kΩ and VOUT = 1.4V 0.16 % dP Differential Phase (Note 9) RF = RG = 1kΩ and VOUT = 1.4V 0.22 ° NOTES: 7. Measured over operating temperature range 8. Slew rate is measured on rising and falling edges 9. NTSC signal generator used 5 FN7355.1 August 3, 2005 EL5611, EL5811 Typical Performance Curves VS=±5V TA=25°C 400 TYPICAL PRODUCTION DISTRIBUTION 300 200 100 25 QUANTITY (AMPLIFIERS) 20 15 10 5 INPUT BIAS CURRENT (µA) 0.008 1.5 1 0.5 0 30 70 110 4.88 70 110 150 TEMPERATURE (°C) FIGURE 5. OUTPUT HIGH VOLTAGE vs TEMPERATURE 6 21 19 -0.008 -10 30 70 110 150 FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE OUTPUT LOW VOLTAGE (V) 4.90 30 17 -0.004 -4.85 VS=±5V IOUT=5mA -10 15 0 TEMPERATURE (°C) 4.92 4.86 -50 11 0.004 -0.012 -50 150 FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE 4.94 13 VS=±5V TEMPERATURE (°C) 4.96 9 FIGURE 2. INPUT OFFSET VOLTAGE DRIFT 2 -10 7 INPUT OFFSET VOLTAGE DRIFT, TCVOS (µV/°C) FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION -0.5 -50 5 1 12 8 10 6 4 2 -0 -2 -4 -6 -8 -10 -12 INPUT OFFSET VOLTAGE (mV) OUTPUT HIGH VOLTAGE (V) TYPICAL PRODUCTION DISTRIBUTION 0 0 INPUT OFFSET VOLTAGE (mV) VS=±5V 3 QUANTITY (AMPLIFIERS) 500 -4.87 VS=±5V IOUT=5mA -4.89 -4.91 -4.93 -4.95 -50 -10 30 70 110 150 TEMPERATURE (°C) FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE FN7355.1 August 3, 2005 EL5611, EL5811 Typical Performance Curves (Continued) 78 VS=±5V RL=1kΩ VS=±5V 77 SLEW RATE (V/µs) OPEN-LOOP GAIN (dB) 75 70 65 76 75 74 73 60 -50 -10 30 70 110 72 -50 150 -10 FIGURE 7. OPEN-LOOP GAIN vs TEMPERATURE SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 2.7 2.5 2.3 2.1 1.9 1.7 1.5 4 8 12 150 16 VS=±5V 2.65 2.6 2.55 2.5 2.45 2.4 -50 20 -10 30 70 110 150 TEMPERATURE (°C) SUPPLY VOLTAGE (V) FIGURE 9. SUPPLY CURRENT PER AMPLIFIER vs SUPPLY VOLTAGE FIGURE 10. SUPPLY CURRENT PER AMPLIFIER vs TEMPERATURE 0 0.3 DIFFERENTIAL PHASE (°) -0.02 DIFFERENTIAL GAIN (%) 110 FIGURE 8. SLEW RATE vs TEMPERATURE TA=25°C 2.7 70 TEMPERATURE (°C) TEMPERATURE (°C) 2.9 30 -0.04 -0.06 -0.08 -0.1 -0.12 VS=±5V AV=2 RL=1kΩ -0.14 -0.16 -0.18 0.25 0.2 0.15 0.1 0.05 0 0 100 IRE FIGURE 11. DIFFERENTIAL GAIN 7 200 0 100 200 IRE FIGURE 12. DIFFERENTIAL PHASE FN7355.1 August 3, 2005 EL5611, EL5811 Typical Performance Curves (Continued) -30 -60 2nd HD -70 -80 40 PHASE 10 4 6 8 -20 1K 10 10K VS=±5V AV=1 CLOAD=0pF 1kΩ 1 -1 560Ω -3 150Ω -5 100K 1M 10M 1000pF 15 10pF 5 -5 -15 VS=±5V AV=1 RL=1kΩ 1M 10M 100M FIGURE 16. FREQUENCY RESPONSE FOR VARIOUS CL MAXIMUM OUTPUT SWING (VP-P) OUTPUT IMPEDANCE (Ω) 350 300 250 200 150 100 50 1M 100pF FREQUENCY (Hz) 400 10M 100M FREQUENCY (Hz) FIGURE 17. CLOSED LOOP OUTPUT IMPEDANCE 8 -50 100M 47pF -25 100K 100M FIGURE 15. FREQUENCY RESPONSE FOR VARIOUS RL 100K 10M 25 FREQUENCY (Hz) 0 10K 1M FIGURE 14. OPEN LOOP GAIN AND PHASE MAGNITUDE (NORMALIZED) (dB) MAGNITUDE (NORMALIZED) (dB) FIGURE 13. HARMONIC DISTORTION vs VOP-P 3 100K FREQUENCY (Hz) VOP-P (V) 5 70 0 -90 2 130 20 3rd HD 0 190 GAIN PHASE (°) -50 60 GAIN (dB) -40 DISTORTION (dB) 250 80 VS=±5V AV=2 RL=1kΩ FREQ=1MHz 12 10 8 6 4 2 VS=±5V AV=1 RL=1kΩ DISTORTION <1% 0 10K 100K 1M 10M 100M FREQUENCY (kHz) FIGURE 18. MAXIMUM OUTPUT SWING vs FREQUENCY FN7355.1 August 3, 2005 EL5611, EL5811 Typical Performance Curves (Continued) -15 -80 PSRR+ -35 -45 -40 -20 -55 -65 1K PSRR- -60 PSRR (dB) CMRR (dB) -25 VS=±5V TA=25°C 10K 100K 1M 10M 0 100 100M 1K FREQUENCY (Hz) XTALK (dB) 100 10 DUAL MEASURED CH A TO B QUAD MEASURED CH A TO D OR B TO C OTHER COMBINATIONS YIELD IMPROVED REJECTION -100 -120 VS=±5V RL=1kΩ AV=1 VIN=110mVRMS -140 1K 10K 100K 1M 10M -160 1K 100M 10K FREQUENCY (Hz) 60 1M 10M 30M FIGURE 22. CHANNEL SEPARATION 5 VS=±5V AV=1 RL=1kΩ VIN=±50mV TA=25°C 4 3 STEP SIZE (V) 80 100K FREQUENCY (Hz) FIGURE 21. INPUT VOLTAGE NOISE SPECTRAL DENSITY 100 10M -60 -80 1 100 1M FIGURE 20. PSRR 1K VOLTAGE NOISE (nV/√Hz) 100K FREQUENCY (Hz) FIGURE 19. CMRR OVERSHOOT (%) 10K 40 VS=±5V AV=1 RL=1kΩ 0.1% 2 1 0 -1 -2 0.1% -3 20 -4 0 10 100 LOAD CAPACITANCE (pF) FIGURE 23. SMALL-SIGNAL OVERSHOOT vs LOAD CAPACITANCE 9 1K -5 55 65 75 85 95 105 SETTLING TIME (ns) FIGURE 24. SETTLING TIME vs STEP SIZE FN7355.1 August 3, 2005 EL5611, EL5811 Typical Performance Curves (Continued) VS=±5V TA=25°C AV=1 RL=1kΩ VS=±5V TA=25°C AV=1 RL=1kΩ 100mV STEP 1V STEP 50ns/DIV 50ns/DIV FIGURE 25. LARGE SIGNAL TRANSIENT RESPONSE FIGURE 26. SMALL SIGNAL TRANSIENT RESPONSE Pin Descriptions EL5611 EL5811 NAME 1, 5, 9, 14, 20, 23 4, 5, 10, 11, 17, 18, 25, 26 VOUTx FUNCTION EQUIVALENT CIRCUIT Amplifiers output VS+ GND VS- CIRCUIT 1 2, 3, 6, 7, 9, 10, 15, 16, 21, 22 2, 3, 6, 7, 8, 9, 12. 13, 15, 16, 19, 20, 23, 24, 27, 28 VINx Amplifiers input VS+ VSCIRCUIT 2 8, 24 1, 14 VS+ Positive power supply 24, 17 21, 22 VS- Negative power supply NC Not connected 12, 13 10 FN7355.1 August 3, 2005 EL5611, EL5811 Applications Information continuous current never exceeds ±65mA. This limit is set by the design of the internal metal interconnects. Product Description The EL5611 and EL5811 voltage feedback amplifiers are fabricated using a high voltage CMOS process. They exhibit rail-to-rail input and output capability, are unity gain stable and have low power consumption (2.5mA per amplifier). These features make the EL5611, and EL5811 ideal for a wide range of general-purpose applications. Connected in voltage follower mode and driving a load of 1kΩ, the EL5611 and EL5811 have a -3dB bandwidth of 60MHz while maintaining a 75V/µs slew rate. The EL5611 a six channel amplifier, and the EL5811 an 8 channel amplifier. Output Phase Reversal The EL5611 and EL5811 are immune to phase reversal as long as the input voltage is limited from VS- -0.5V to VS+ +0.5V. Figure 28 shows a photo of the output of the device with the input voltage driven beyond the supply rails. Although the device's output will not change phase, the input's overvoltage should be avoided. If an input voltage exceeds supply voltage by more than 0.6V, electrostatic protection diodes placed in the input stage of the device begin to conduct and overvoltage damage could occur. Operating Voltage, Input, and Output VS = ±2.5V, TA = 25°C, AV = 1, VIN = 6VP-P The EL5611and EL5811 are specified with a single nominal supply voltage from 5V to 15V or a split supply with its total range from 5V to 15V. Correct operation is guaranteed for a supply range of 4.5V to 16.5V. Most EL5611 and EL5811 specifications are stable over both the full supply range and operating temperatures of -40°C to +85°C. Parameter variations with operating voltage and/or temperature are shown in the typical performance curves. The input common-mode voltage range of the EL5611 and EL5811 extends 500mV beyond the supply rails. The output swings of the EL5611 and EL5811 typically extend to within 100mV of positive and negative supply rails with load currents of 5mA. Decreasing load currents will extend the output voltage range even closer to the supply rails. Figure 27 shows the input and output waveforms for the device in the unity-gain configuration. Operation is from ±5V supply with a 1kΩ load connected to GND. The input is a 10VP-P sinusoid. The output voltage is approximately 9.8VP-P. VS = ±5V, TA = 25°C, AV = 1, VIN = 10VP-P 5V 10µs 1V 10µs 1V FIGURE 28. OPERATION WITH BEYOND-THE-RAILS INPUT Power Dissipation With the high-output drive capability of the EL5611 and EL5811 amplifiers, it is possible to exceed the 125°C 'absolute-maximum junction temperature' under certain load current conditions. Therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area. INPUT 5V T JMAX – T AMAX P DMAX = --------------------------------------------Θ JA OUTPUT The maximum power dissipation allowed in a package is determined according to: where: FIGURE 27. OPERATION WITH RAIL-TO-RAIL INPUT AND OUTPUT • TJMAX = Maximum junction temperature • TAMAX = Maximum ambient temperature • ΘJA = Thermal resistance of the package Short Circuit Current Limit • PDMAX = Maximum power dissipation in the package The EL5611 and EL5811 will limit the short circuit current to ±180mA if the output is directly shorted to the positive or the negative supply. If an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. Maximum reliability is maintained if the output The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total power supply voltage, plus the power in the IC due to the loads, or: 11 P DMAX = Σi [ V S × I SMAX + ( V S + – V OUT i ) × I LOAD i ] FN7355.1 August 3, 2005 EL5611, EL5811 when sourcing, and: P DMAX = Σi [ V S × I SMAX + ( V OUT i – V S - ) × I LOAD i ] 1 JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 909mW 0.9 POWER DISSIPATION (W) when sinking, where: • i = 1 to 6 for EL5611 and 1 to 8 for EL5811 • VS = Total supply voltage • ISMAX = Maximum supply current per amplifier • VOUTi = Maximum output voltage of the application • ILOADi = Load current If we set the two PDMAX equations equal to each other, we can solve for RLOADi to avoid device overheat. Figures 29 and 30 provide a convenient way to see if the device will overheat. The maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. By using the previous equation, it is a simple matter to see if PDMAX exceeds the device's power derating curves. To ensure proper operation, it is important to observe the recommended derating curves shown in Figures 29 & 30. JEDEC JESD51-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD - HTSSOP EXPOSED DIEPAD SOLDERED TO PCB PER JESD51-5 POWER DISSIPATION (W) 3.5 3.333W 3 3.030W 2.5 HTSSOP28 θJA=30°C/W 2 HTSSOP24 θJA=33°C/W 1.5 1 0.5 0 0 25 50 75 85 100 125 150 AMBIENT TEMPERATURE (°C) 0.8 833mW 0.7 HTSSOP28 θJA=110°C/W 0.6 0.5 HTSSOP24 θJA=120°C/W 0.4 0.3 0.2 0.1 0 0 25 50 75 85 100 125 150 AMBIENT TEMPERATURE (°C) FIGURE 30. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE Unused Amplifiers It is recommended that any unused amplifiers in a dual and a quad package be configured as a unity gain follower. The inverting input should be directly connected to the output and the non-inverting input tied to the ground plane. Power Supply Bypassing and Printed Circuit Board Layout The EL5611 and EL5811 can provide gain at high frequency. As with any high-frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. For normal single supply operation, where the VS- pin is connected to ground, a 0.1µF ceramic capacitor should be placed from VS+ to pin to VS- pin. A 4.7µF tantalum capacitor should then be connected in parallel, placed in the region of the amplifier. One 4.7µF capacitor may be used for multiple devices. This same capacitor combination should be placed at each supply pin to ground if split supplies are to be used. FIGURE 29. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 12 FN7355.1 August 3, 2005