Test P880 Pages 1 and 2

Date:- 27 Nov, 2014
Data Sheet Issue:- 2
Insulated Gate Bi-Polar Transistor
Type T2400GB45E
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VCES
Collector – emitter voltage
4500
V
VDC link
Permanent DC voltage for 100 FIT failure rate.
2800
V
VGES
Peak gate – emitter voltage
±20
V
MAXIMUM
LIMITS
UNITS
RATINGS
IC
Continuous DC collector current, IGBT
2400
A
ICRM
Repetitive peak collector current, tp=1ms, IGBT
4800
A
IECO
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
2400
A
PMAX
Maximum power dissipation, IGBT (note 2)
19
kW
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +125
°C
Notes: 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
Data Sheet T2400GB45E Issue 2
Page 1 of 6
November, 2014
Insulated Gate Bi-polar Transistor Type T2400GB45E
Characteristics
IGBT Characteristics
PARAMETER
MIN
TYP
MAX
TEST CONDITIONS
-
2.8
3.2
IC = 2400A, VGE = 15V, Tj = 25°C
IC = 2400A, VGE = 15V
UNITS
V
VCE(sat)
Collector – emitter saturation voltage
-
3.6
4.0
VT0
Threshold voltage
-
-
1.49
rT
Slope resistance
-
-
1.05
VGE(TH)
Gate threshold voltage
-
5.1
-
VCE = VGE, IC = 250mA
V
ICES
Collector – emitter cut-off current
45
70
VCE = VCES, VGE = 0V
mA
IGES
Gate leakage current
-
-
±30
VGE = ±20V
µA
Cies
Input capacitance
-
400
-
VCE = 25V, VGE = 0V, f = 1MHz
nF
td(on)
Turn-on delay time
-
1.4
-
tr(V)
Qg(on)
Rise time
Turn-on gate charge
-
3.2
18
V
V
Current range: 800A – 2400A
mΩ
µs
-
IC =2400A, VCE =2800V, di/dt=4000A/µs
µs
-
VGE = ±15V, Ls=200nH
µC
J
Eon
Turn-on energy
-
13
-
Rg(ON)= 2.2Ω, Rg(OFF)=8.2Ω, CGE=267nF
td(off)
Turn-off delay time
-
4.6
-
Freewheel diode type E2400TC45C at
Tj=125°C.
µs
tf(I)
Fall time
-
2.6
-
(Notes 3, 4 & 5)
µs
Qg(off)
Turn-off gate charge
-
14
-
µC
Eoff
Turn-off energy
-
13
-
J
ISC
Short circuit current
-
9500
-
MIN
TYP
MAX
-
-
-
VGE=+15V, VCC=2800V, VCEmax≤VCES,
tp≤10µs
A
Thermal Characteristics
PARAMETER
RthJK
Thermal resistance junction to sink, IGBT
F
Mounting force
Wt
Weight
TEST CONDITIONS
UNITS
5.2
Double side cooled
K/kW
-
8.5
Collector side cooled
K/kW
Emitter side cooled
K/kW
-
-
13.5
50
-
70
-
2
-
Note 2
kN
kg
Notes:1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements.
3) CGE is additional gate - emitter capacitance added to output of gate drive circuit.
4) Eon integration time 15µs from 10% rising IG.
5) Eoff integration time 15µs from 90% falling VGE.
Data Sheet T2400GB45E Issue 2
Page 2 of 6
November, 2014
Insulated Gate Bi-polar Transistor Type T2400GB45E
Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
Figure 2 – Typical output characteristic
10000
6000
T2400GB45E
Issue 2
V GE =+15V
T2400GB45E
Issue 2
T j =25°C
5000
25°C
125°C
Collector current - IC(A)
Collector current - IC (A)
4000
1000
3000
V GE = 20V
V GE = 17V
V GE = 15V
V GE = 13V
V GE = 11V
2000
1000
0
100
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector to emitter saturation voltage - V CE(sat)(V)
Collector to em itter saturation voltage - V CE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
Figure 3 – Typical output characteristic
6000
15
V CE =2800V
V G E =±15V
C G E =267nF
T j=125°C
T2400G B45E
Issue 2
T j =125°C
T2400GB45E
Issue 2
5000
I C =2400A
I C =1500A
Turn-on delay time - td(on)(µs)
Collector current - I c(A)
4000
V G E = 20V
V G E = 17V
V G E = 15V
V G E = 13V
V G E = 11V
3000
2000
10
5
1000
0
0
0
1
2
3
4
5
6
0
7
Collector to em itter saturation voltage - V CE(sat) (V)
Data Sheet T2400GB45E Issue 2
2
4
6
8
10
12
14
Gate resistance - R G(on) (Ω )
Page 3 of 6
November, 2014
Insulated Gate Bi-polar Transistor Type T2400GB45E
Figure 5 – Typical turn-off delay time vs. gate
resistance
Figure 6 – Typical turn-on energy vs. collector current
14
15
T2400GB45E
Issue 2
VCE=2800V
VGE=±15V
CGE=267nF
Tj=125°C
IC=2400A
V CE=2800V
RG(on)=2.2Ω
CGE=267nF
V GE=±15V
Tj=125°C
IC=1500A
Turn-on energy per pulse - E(on)(J)
Turn-off delay time - td(off)(µs)
12
T2400GB45E
Issue 2
10
8
6
10
V CE=2000V
5
V CE=1000V
4
2
0
5
10
15
20
25
30
0
1000
Figure 7 – Typical turn-on energy vs. di/dt
3000
Figure 8 – Typical turn-off energy vs. collector current
50
15
T2400GB45E
Issue 2
T2400GB45E
Issue 2
V CE =2800V
V GE =±15V
T j=125°C
V CE =2800V
R G(off)=8.2Ω
C GE =267nF
V GE =±15V
T j=125°C
Turn-on energy per pulse - E(off)(mJ)
40
Turn-on energy per pulse - E(on)(J)
2000
Collector current - IC (A)
Gate resistance - RG(off) (Ω)
30
20
10
V CE =2000V
V CE =1000V
5
IC =2400A
10
IC =1500A
0
0
0
1000
2000
3000
4000
5000
Commutation rate - di/dt (A/µs)
Data Sheet T2400GB45E Issue 2
0
1000
2000
3 000
Collector current - IC (A)
Page 4 of 6
November, 2014
Insulated Gate Bi-polar Transistor Type T2400GB45E
Figure 9 – Turn-off energy vs voltage
Figure 10 – Safe operating area
5000
15
V GE=±15V
Maximum Ls=200nH
Tj=125°C
Non-repetitive
T2400GB45E
Issue 2
R G(off)=8.2Ω
C GE=267nF
V GE=±15V
Tj=125°C
IC=2400A
T2400GB45E
Issue 2
4000
IC=2000A
Collector current - IC (A)
Turn-off energy - Eoff (J)
10
IC=1500A
3000
2000
IC=1000A
5
IC=800A
1000
0
500
0
1000
1500
2000
2500
3000
3500
0
Collector-emitter voltage - V CE (V)
1000
2000
3000
4000
5000
Collector-emitter voltage - V CE (V)
Transient thermal impedance junction to sink (K/W)
0.1
T2400GB45E
Issue 2
Emitter
Collector
Double Side
0.01
0.001
0.0001
0.00001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Data Sheet T2400GB45E Issue 2
Page 5 of 6
November, 2014
Insulated Gate Bi-polar Transistor Type T2400GB45E
Outline Drawing & Ordering Information
101A359
ORDERING INFORMATION
T2400
GB
Fixed type
Code
Fixed Outline
Code
(Please quote 10 digit code as below)
45
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: +1 (408) 457 9000
Fax: +1 (408) 496 0670
E-mail: [email protected]
E
Voltage Grade
VCES/100
45
Typical order code: T2400GB45E (VCES = 4500V)
Fixed format code
IXYS UK Westcode Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: [email protected]
www.ixysuk.com
www.ixys.net
IXYS Long Beach
IXYS Long Beach, Inc
2500 Mira Mar Ave, Long Beach
CA 90815
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
E-mail: [email protected]
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet T2400GB45E Issue 2
Page 6 of 6
November, 2014