Test P880 Pages 1 and 2

WESTCODE
An
Date:- 18 Jan, 2011
Data Sheet Issue:- P1
IXYS Company
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T0570VB25G
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VCES
Collector – emitter voltage
2500
V
VDC link
Permanent DC voltage for 100 FIT failure rate.
1250
V
VGES
Peak gate – emitter voltage
±20
V
MAXIMUM
LIMITS
UNITS
RATINGS
IC(DC)
DC collector current, IGBT
570
A
ICRM
Repetitive peak collector current, tp=1ms, IGBT
1140
A
IF(DC)
Continuous DC forward current, Diode
570
A
IFRM
Repetitive peak forward current, tp=1ms, Diode
1140
A
IFSM
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
5130
A
IFSM2
Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4)
5650
A
PMAX
Maximum power dissipation, IGBT (Note 2)
2.96
kW
(di/dt)cr
Critical diode di/dt (note 3)
1500
A/µs
Tj
Operating temperature range.
-40 to +125
°C
Tstg
Storage temperature range.
-40 to +125
°C
Notes: 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
Prospective Data Sheet T0570VB25G Issue P1
Page 1 of 7
January, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0570VB25G
Characteristics
IGBT Characteristics
PARAMETER
MIN
TYP
MAX
TEST CONDITIONS
UNITS
-
2.10
2.40
IC = 570A, VGE = 15V, Tj = 25°C
V
-
2.95
3.25
IC = 570A, VGE = 15V
V
Threshold voltage
-
-
1.33
rT
Slope resistance
-
-
3.37
VGE(TH)
Gate threshold voltage
-
5.8
6.3
VCE = VGE, IC = 50mA
V
ICES
Collector – emitter cut-off current
5
15
VCE = VCES, VGE = 0V
mA
IGES
Gate leakage current
-
3
10
VGE = ±20V
µA
Cies
Input capacitance
-
75
-
VCE = 25V, VGE = 0V, f = 1MHz
nF
td(on)
Turn-on delay time
-
1.0
-
tr(V)
Rise time
-
2.5
-
IC =570A, VCE =1250V, di/dt=1000A/µs
µs
Qg(on)
Turn-on gate charge
-
4.0
-
VGE = ±15V, Ls=200nH
µC
Eon
Turn-on energy
-
1.4
-
Rg(ON)= 4.7Ω, Rg(OFF)=10Ω, CGE=100nF
J
td(off)
Turn-off delay time
-
1.5
-
Integral diode used as freewheel diode
µs
tf(I)
Fall time
-
8.3
-
(Note 3 & 4)
µs
Qg(off)
Turn-off gate charge
-
4
-
Eoff
Turn-off energy
-
0.95
-
VCE(sat)
Collector – emitter saturation voltage
VT0
ISC
Short circuit current
V
Current range: 190 – 570A
mΩ
µs
µC
J
VGE=+15V, VCC=1250V, VCEmax≤VCES,
tp≤10µs
-
1580
-
MIN
TYP
MAX
TEST CONDITIONS
-
1.85
2.15
IF = 570A, Tj =25°C
V
-
2.05
2.35
IF = 570A
V
A
Diode Characteristics
PARAMETER
UNITS
VF
Forward voltage
VTo
Threshold voltage
-
-
1.34
rT
Slope resistance
-
-
1.77
Irm
Peak reverse recovery current
-
320
-
Qrr
Recovered charge
-
450
-
trr
Reverse recovery time, 50% chord
-
1.6
-
Er
Reverse recovery energy
-
0.5
-
MIN
TYP
MAX
TEST CONDITIONS
UNITS
-
-
33.8
Double side cooled
K/kW
-
-
53
Collector side cooled
K/kW
-
-
98
Emitter side cooled
K/kW
-
-
36.5
Double side cooled
K/kW
V
Current range 190-570A
mΩ
A
IF = 570A, VGE = -15V, di/dt=1000A/µs
µC
µs
J
Thermal Characteristics
PARAMETER
RthJK
RthJK
Thermal resistance junction to sink, IGBT
Thermal resistance junction to sink, Diode
F
Mounting force
Wt
Weight
-
-
56.5
Cathode side cooled
K/kW
-
-
105
Anode side cooled
K/kW
11
-
16
Note 2
-
0.65
-
kN
kg
Notes:1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 4 to 9 are obtained using integral diode as freewheeling diode
Prospective Data Sheet T0570VB25G Issue P1
Page 2 of 7
January, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0570VB25G
Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
Figure 2 – Typical output characteristic
1500
10000
T0570VB25G
Issue P1
T0570VB25G
Issue P1
V GE =+15V
T j =25°C
25°C
125°C
1000
Collector current - Ic(A)
Collector current - IC (A)
1000
100
500
V GE = 20V
V GE = 17V
V GE = 15V
V GE = 12V
V GE = 10V
10
1
0
0
1
2
3
4
5
0
6
Collector to em itter saturation voltage - V CE(sat) (V)
1
2
3
Collector to em itter saturation voltage - V CE(sat) (V)
4
Figure 4 – Typical turn-on delay time vs gate
resistance
Figure 3 – Typical output characteristic
1500
5
V CE =1250V
IC =570A
V GE =±15V
C GE =100nF
T j=125°C
T0570VB25G
Issue P1
T j =125°C
T0570VB25G
Issue P1
4
Collector current - Ic(A)
Turn-on delay time - td(on)(µs)
1000
500
V GE = 20V
V GE = 17V
V GE = 15V
V GE = 12V
V GE = 10V
3
2
1
0
0
0
1
2
3
4
Collector to emitter saturation voltage - V CE(sat) (V)
Prospective Data Sheet T0570VB25G Issue P1
5
0
5
10
15
20
Gate resistance - R G(on) (Ω)
Page 3 of 7
January, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0570VB25G
Figure 5 – Typical turn-off delay time vs. gate
resistance
Figure 6 – Typical turn-on energy vs. collector current
1500
4
V CE =1250V
V GE =±15V
IC =570A
C GE=100nF
T j=125°C
T0570VB25G
Issue P1
T0570VB25G
Issue P1
V CE=1250V
R G(on)=4.7Ω
C GE=100nF
V GE=±15V
T j=125°C
Turn-on energy per pulse - E (on)(mJ)
Turn-off delay time - td(off)(µs)
3
2
1000
V CE=900V
V CE=600V
500
1
0
5
10
15
20
Gate resistance - R G(off) (Ω)
0
100
25
200
300
400
500
Figure 7 – Typical turn-on energy vs. di/dt
700
Figure 8 – Typical turn-off energy vs. collector current
3000
1200
T0570VB25G
Issue P1
T0570VB25G
Issue P1
RG(off)=10Ω
CGE=100nF
VGE=±15V
Tj=125°C
VCE=1250V
VGE=±15V
Tj=125°C
Turn-on energy per pulse - E (off)(mJ)
1000
Turn-on energy per pulse - E(on)(mJ)
600
Collector current - IC (A)
2000
IC=570A
1000
0
500
1000
1500
2000
Commutation rate - di/dt (A/µs)
Prospective Data Sheet T0570VB25G Issue P1
800
VCE=1000V
600
VCE=600V
400
200
IC=300A
0
VCE=1250V
Page 4 of 7
0
100
200
300
400
500
Collector current - IC (A)
600
700
January, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0570VB25G
Figure 9 – Turn-off energy vs voltage
Figure 10 – Safe operating area
1400
1200
RG(off)=10Ω
CGE=100nF
V GE=±15V
Tj=125°C
V GE=±15V
Maximum LS=200nH
Tj=125°C
T0570VB25G
Issue P1
T0570VB25G
Issue P1
1200
1000
IC=1200A
1000
IC=1000A
Collector current - IC (A)
Turn-off energy - Eoff (mJ)
800
IC=600A
600
IC=300A
800
600
400
400
200
200
0
400
0
600
800
1000
1200
1400
0
Collector-emitter voltage - VCE (V)
500
1000
1500
2000
2500
3000
Gollector-emitter voltage - V CE (V)
Figure 11 – Typical diode forward characteristics
Figure 12 – Typical recovered charge
600
10000
T0570VB25G
Issue P1
T0570VB25G
Issue P1
T j=125°C
T j=25°C
T j=125°C
500
Typical recovered charge - Qrr (µC)
Instantaneous forward current - IF (A)
1000
100
IC=570A
400
IC=300A
300
10
200
1
0
1
2
3
Instantaneous forward voltage - V F (V)
Prospective Data Sheet T0570VB25G Issue P1
0
4
500
1000
1500
2000
Commutation rate - di/dt (A/µs)
Page 5 of 7
January, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0570VB25G
Figure 13 – Typical reverse recovery current
Figure 14 – Typical reverse recovery time
500
4.0
T0570VB25G
Issue P1
IC =570A
IC =300A
400
Typical reverse recovery time - trr (µs)
Typical reverse recovery current - Irm (A)
T j=125°C
T0570VB25G
Issue P1
T j=125°C
300
200
3.0
2.0
IC =570A
1.0
100
0.0
0
500
1000
1500
2000
0
Figure 15 – Transient thermal impedance (IGBT)
1
Emitter
Collector
Double Side
1500
2000
T0570VB25G
Issue P1
Anode
Cathode
Double Side
0.1
Transient thermal impedance junction to sink (K/W)
Transient thermal impedance junction to sink (K/W)
1000
Figure 16 – Transient thermal impedance (Diode)
T0570VB25G
Issue P1
0.1
500
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
1
IC =300A
0.01
0.001
0.0001
0.01
0.001
0.0001
0.00001
0.000001
1E-06
1E-05 0.0001 0.001
0.01
0.1
1
10
100
0.00001
0.00001 0.0001
Prospective Data Sheet T0570VB25G Issue P1
0.001
0.01
0.1
1
10
100
Time (s)
Time (s)
Page 6 of 7
January, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0570VB25G
Outline Drawing & Ordering Information
101A366
(Please quote 10 digit code as below)
ORDERING INFORMATION
T0570
VB
25
G
Fixed type
Code
Fixed Outline
Code
Voltage Grade
VCES/100
25
Fixed format code
Typical order code: T0570VB25G (VCES = 2500V)
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: +1 (408) 457 9000
Fax: +1 (408) 496 0670
E-mail: [email protected]
WESTCODE
An
IXYS Company
www.westcode.com
www.ixys.net
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: [email protected]
IXYS Long Beach
IXYS Long Beach, Inc
2500 Mira Mar Ave, Long Beach
CA 90815
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
E-mail: [email protected]
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the
conditions and limits contained in this report.
Prospective Data Sheet T0570VB25G Issue P1
Page 7 of 7
January, 2011