WESTCODE An Date:- 18 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0570VB25G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC(DC) DC collector current, IGBT 570 A ICRM Repetitive peak collector current, tp=1ms, IGBT 1140 A IF(DC) Continuous DC forward current, Diode 570 A IFRM Repetitive peak forward current, tp=1ms, Diode 1140 A IFSM Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) 5130 A IFSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) 5650 A PMAX Maximum power dissipation, IGBT (Note 2) 2.96 kW (di/dt)cr Critical diode di/dt (note 3) 1500 A/µs Tj Operating temperature range. -40 to +125 °C Tstg Storage temperature range. -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial. Prospective Data Sheet T0570VB25G Issue P1 Page 1 of 7 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0570VB25G Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS - 2.10 2.40 IC = 570A, VGE = 15V, Tj = 25°C V - 2.95 3.25 IC = 570A, VGE = 15V V Threshold voltage - - 1.33 rT Slope resistance - - 3.37 VGE(TH) Gate threshold voltage - 5.8 6.3 VCE = VGE, IC = 50mA V ICES Collector – emitter cut-off current 5 15 VCE = VCES, VGE = 0V mA IGES Gate leakage current - 3 10 VGE = ±20V µA Cies Input capacitance - 75 - VCE = 25V, VGE = 0V, f = 1MHz nF td(on) Turn-on delay time - 1.0 - tr(V) Rise time - 2.5 - IC =570A, VCE =1250V, di/dt=1000A/µs µs Qg(on) Turn-on gate charge - 4.0 - VGE = ±15V, Ls=200nH µC Eon Turn-on energy - 1.4 - Rg(ON)= 4.7Ω, Rg(OFF)=10Ω, CGE=100nF J td(off) Turn-off delay time - 1.5 - Integral diode used as freewheel diode µs tf(I) Fall time - 8.3 - (Note 3 & 4) µs Qg(off) Turn-off gate charge - 4 - Eoff Turn-off energy - 0.95 - VCE(sat) Collector – emitter saturation voltage VT0 ISC Short circuit current V Current range: 190 – 570A mΩ µs µC J VGE=+15V, VCC=1250V, VCEmax≤VCES, tp≤10µs - 1580 - MIN TYP MAX TEST CONDITIONS - 1.85 2.15 IF = 570A, Tj =25°C V - 2.05 2.35 IF = 570A V A Diode Characteristics PARAMETER UNITS VF Forward voltage VTo Threshold voltage - - 1.34 rT Slope resistance - - 1.77 Irm Peak reverse recovery current - 320 - Qrr Recovered charge - 450 - trr Reverse recovery time, 50% chord - 1.6 - Er Reverse recovery energy - 0.5 - MIN TYP MAX TEST CONDITIONS UNITS - - 33.8 Double side cooled K/kW - - 53 Collector side cooled K/kW - - 98 Emitter side cooled K/kW - - 36.5 Double side cooled K/kW V Current range 190-570A mΩ A IF = 570A, VGE = -15V, di/dt=1000A/µs µC µs J Thermal Characteristics PARAMETER RthJK RthJK Thermal resistance junction to sink, IGBT Thermal resistance junction to sink, Diode F Mounting force Wt Weight - - 56.5 Cathode side cooled K/kW - - 105 Anode side cooled K/kW 11 - 16 Note 2 - 0.65 - kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements 3) CGE is additional gate – emitter capacitance added to output of gate drive 4) Figures 4 to 9 are obtained using integral diode as freewheeling diode Prospective Data Sheet T0570VB25G Issue P1 Page 2 of 7 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0570VB25G Curves Figure 1 – Typical collector-emitter saturation voltage characteristics Figure 2 – Typical output characteristic 1500 10000 T0570VB25G Issue P1 T0570VB25G Issue P1 V GE =+15V T j =25°C 25°C 125°C 1000 Collector current - Ic(A) Collector current - IC (A) 1000 100 500 V GE = 20V V GE = 17V V GE = 15V V GE = 12V V GE = 10V 10 1 0 0 1 2 3 4 5 0 6 Collector to em itter saturation voltage - V CE(sat) (V) 1 2 3 Collector to em itter saturation voltage - V CE(sat) (V) 4 Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 1500 5 V CE =1250V IC =570A V GE =±15V C GE =100nF T j=125°C T0570VB25G Issue P1 T j =125°C T0570VB25G Issue P1 4 Collector current - Ic(A) Turn-on delay time - td(on)(µs) 1000 500 V GE = 20V V GE = 17V V GE = 15V V GE = 12V V GE = 10V 3 2 1 0 0 0 1 2 3 4 Collector to emitter saturation voltage - V CE(sat) (V) Prospective Data Sheet T0570VB25G Issue P1 5 0 5 10 15 20 Gate resistance - R G(on) (Ω) Page 3 of 7 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0570VB25G Figure 5 – Typical turn-off delay time vs. gate resistance Figure 6 – Typical turn-on energy vs. collector current 1500 4 V CE =1250V V GE =±15V IC =570A C GE=100nF T j=125°C T0570VB25G Issue P1 T0570VB25G Issue P1 V CE=1250V R G(on)=4.7Ω C GE=100nF V GE=±15V T j=125°C Turn-on energy per pulse - E (on)(mJ) Turn-off delay time - td(off)(µs) 3 2 1000 V CE=900V V CE=600V 500 1 0 5 10 15 20 Gate resistance - R G(off) (Ω) 0 100 25 200 300 400 500 Figure 7 – Typical turn-on energy vs. di/dt 700 Figure 8 – Typical turn-off energy vs. collector current 3000 1200 T0570VB25G Issue P1 T0570VB25G Issue P1 RG(off)=10Ω CGE=100nF VGE=±15V Tj=125°C VCE=1250V VGE=±15V Tj=125°C Turn-on energy per pulse - E (off)(mJ) 1000 Turn-on energy per pulse - E(on)(mJ) 600 Collector current - IC (A) 2000 IC=570A 1000 0 500 1000 1500 2000 Commutation rate - di/dt (A/µs) Prospective Data Sheet T0570VB25G Issue P1 800 VCE=1000V 600 VCE=600V 400 200 IC=300A 0 VCE=1250V Page 4 of 7 0 100 200 300 400 500 Collector current - IC (A) 600 700 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0570VB25G Figure 9 – Turn-off energy vs voltage Figure 10 – Safe operating area 1400 1200 RG(off)=10Ω CGE=100nF V GE=±15V Tj=125°C V GE=±15V Maximum LS=200nH Tj=125°C T0570VB25G Issue P1 T0570VB25G Issue P1 1200 1000 IC=1200A 1000 IC=1000A Collector current - IC (A) Turn-off energy - Eoff (mJ) 800 IC=600A 600 IC=300A 800 600 400 400 200 200 0 400 0 600 800 1000 1200 1400 0 Collector-emitter voltage - VCE (V) 500 1000 1500 2000 2500 3000 Gollector-emitter voltage - V CE (V) Figure 11 – Typical diode forward characteristics Figure 12 – Typical recovered charge 600 10000 T0570VB25G Issue P1 T0570VB25G Issue P1 T j=125°C T j=25°C T j=125°C 500 Typical recovered charge - Qrr (µC) Instantaneous forward current - IF (A) 1000 100 IC=570A 400 IC=300A 300 10 200 1 0 1 2 3 Instantaneous forward voltage - V F (V) Prospective Data Sheet T0570VB25G Issue P1 0 4 500 1000 1500 2000 Commutation rate - di/dt (A/µs) Page 5 of 7 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0570VB25G Figure 13 – Typical reverse recovery current Figure 14 – Typical reverse recovery time 500 4.0 T0570VB25G Issue P1 IC =570A IC =300A 400 Typical reverse recovery time - trr (µs) Typical reverse recovery current - Irm (A) T j=125°C T0570VB25G Issue P1 T j=125°C 300 200 3.0 2.0 IC =570A 1.0 100 0.0 0 500 1000 1500 2000 0 Figure 15 – Transient thermal impedance (IGBT) 1 Emitter Collector Double Side 1500 2000 T0570VB25G Issue P1 Anode Cathode Double Side 0.1 Transient thermal impedance junction to sink (K/W) Transient thermal impedance junction to sink (K/W) 1000 Figure 16 – Transient thermal impedance (Diode) T0570VB25G Issue P1 0.1 500 Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) 1 IC =300A 0.01 0.001 0.0001 0.01 0.001 0.0001 0.00001 0.000001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 0.00001 0.00001 0.0001 Prospective Data Sheet T0570VB25G Issue P1 0.001 0.01 0.1 1 10 100 Time (s) Time (s) Page 6 of 7 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0570VB25G Outline Drawing & Ordering Information 101A366 (Please quote 10 digit code as below) ORDERING INFORMATION T0570 VB 25 G Fixed type Code Fixed Outline Code Voltage Grade VCES/100 25 Fixed format code Typical order code: T0570VB25G (VCES = 2500V) IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] WESTCODE An IXYS Company www.westcode.com www.ixys.net Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Prospective Data Sheet T0570VB25G Issue P1 Page 7 of 7 January, 2011