WESTCODE An Date:- 30 Oct, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V VCES Collector – emitter voltage 4500 VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC(DC) Continuous DC collector current, IGBT 900 A ICRM Repetitive peak collector current, tp=1ms, IGBT 1800 A IF(DC) Continuous DC forward current, Diode 900 A IFRM Repetitive peak forward current, tp=1ms, Diode 1800 A IFSM Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) 14.2 kA IFSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) 15.6 kA PMAX Maximum power dissipation, IGBT (Note 2) 7.1 kW (di/dt)cr Critical diode di/dt (note 3) 2500 A/µs Tj Operating temperature range. -40 to +125 °C Tstg Storage temperature range. -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 250nH. 4) Half-sinewave, 125°C Tj initial. Provisional Data Sheet T0900EB45A Issue 1 Page 1 of 8 October, 2008 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0900EB45A Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS - 3.05 3.40 IC = 900A, VGE = 15V, Tj = 25°C V - 3.80 4.20 IC = 900A, VGE = 15V V - - 1.73 - - 2.68 - 5.3 - VCE = VGE, IC = 90mA V 10 30 VCE = VCES, VGE = 0V mA - - ±10 VGE = ±20V µA - 150 - VCE = 25V, VGE = 0V, f = 1MHz nF - 2.2 - Rise time - 3.4 - IC =900A, VCE =2800V, µs Turn-on gate charge - 5 - VGE = ±15V, Ls=250nH µC Turn-on energy - 4.3 - Rg(ON)= 6.6Ω, Rg(OFF)=5.0Ω, CGE=100nF J Turn-off delay time - 1.9 - Integral diode used as freewheel diode µs (Note 3 ) VCE(sat) Collector – emitter saturation voltage VT0 Threshold voltage rT Slope resistance VGE(TH) Gate threshold voltage ICES Collector – emitter cut-off current IGES Gate leakage current Cies Input capacitance td(on) Turn-on delay time tr(I) Qg(on) Eon td(off) V Current range: 400 – 1200A mΩ µs tf Fall time - 2.4 - Qg(off) Turn-off gate charge - 10 - µC µs Eoff Turn-off energy - 3.6 - J td(on) Turn-on delay time - 2.4 - µs tr(I) Rise time - 3.2 - Qg(on) Turn-on gate charge - 5 - Eon Turn-on energy - 3.8 - td(off) Turn-off delay time - 1.9 - tf Fall time - 2.4 - Qg(off) Turn-off gate charge - 10 - Eoff Turn-off energy - 3.6 - ISC Short circuit current - 3400 - MIN TYP MAX - 3.4 3.7 IF = 900A, Tj =25°C IF = 900A µs IC =900A, VCE = 2800V, µC VGE = ±15V, Ls=250nH Rg(ON)= 6.6Ω, Rg(OFF)=5.0Ω, CGE=100nF Free wheel diode type E900NC450 (Note 3 ) J µs µs µC J VGE=+15V, VCC=2800V, VCEmax≤VCES, tp≤10µs A Diode Characteristics PARAMETER TEST CONDITIONS UNITS V VF Forward voltage - 3.9 4.2 VTo Threshold voltage - - 2.43 rT Slope resistance - - 1.86 Irm Peak reverse recovery current - 610 - A Qrr Recovered charge - 920 - µC trr Reverse recovery time, 50% chord - 2.3 - Er Reverse recovery energy - 0.9 - Provisional Data Sheet T0900EB45A Issue 1 Page 2 of 8 V V Current range 400-1200A mΩ IF = 900A, VGE = ±15V, di/dt=2000A/µs µs J October, 2008 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0900EB45A Thermal Characteristics PARAMETER RthJK Thermal resistance junction to sink, IGBT RthJK Thermal resistance junction to sink, Diode F Mounting force Wt Weight MIN TYP MAX TEST CONDITIONS UNITS - - 14 Double side cooled K/kW - - 23 Collector side cooled K/kW - - 35 Emitter side cooled K/kW - - 26 Double side cooled K/kW - - 41 Cathode side cooled K/kW K/kW - - 78 Anode side cooled 25 - 35 Note 2 - 1.2 - kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements 3) CGE is additional gate – emitter capacitance added to output of gate drive Provisional Data Sheet T0900EB45A Issue 1 Page 3 of 8 October, 2008 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0900EB45A Curves Figure 1 – Typical collector-emitter saturation voltage characteristics 10000 Figure 2 – Typical output characteristic 2000 T0900EB45A AD Issue 1 T0900EB45A AD Issue 1 VGE=+15V Tj =25°C 25°C 125°C 1000 Collector current - I c(A) Instantaneous forward current - IC (A) 1500 1000 VGE = 20V VGE = 17V VGE = 15V VGE = 13V VGE = 11V 100 500 0 10 0 2 4 6 8 0 10 2 3 4 5 6 7 Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 2000 6 T0900EB45A AD Issue 1 T0900EB45A AD Issue 1 IC=900A VCE=2800V VGE=±15V CGE=100nF Tj=125°C Tj =125°C 1500 IC=500A 5 Turn-on delay time - td(on)(µs) Collector current - I c(A) 1 Collector to emitter saturation voltage - VCE(sat) (V) Instantaneous forward voltage - VCE(sat) (V) VGE = 20V VGE = 17V VGE = 15V VGE = 13V VGE = 11V 1000 500 4 3 0 2 0 1 2 3 4 5 6 7 4 Collector to emitter saturation voltage - VCE(sat) (V) Provisional Data Sheet T0900EB45A Issue 1 6 8 10 12 14 16 18 Ω) Gate resistance - RG(on) (Ω Page 4 of 8 October, 2008 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0900EB45A Figure 5 – Typical turn-off delay time vs. gate resistance 4 VCE=2800V VGE=±15V CGE=100nF Tj=125°C IC=900A T0900EB45A AD Issue 1 IC=500A RG(on)=6.6Ω CGE=100nF VGE=±15V Tj=125°C 4000 Turn-on energy per pulse - E(on)(mJ) Turn-off delay time - td(off)(µs) 5000 T0900EB45A AD Issue 1 3.5 Figure 6 – Typical turn-on energy vs. collector current 3 2.5 2 VCE=2800V VCE=2000V 3000 VCE=1000V 2000 1000 1.5 4 6 8 10 12 14 0 200 16 Ω) Gate resistance - RG(off) (Ω 400 600 800 1000 Collector current - IC (A) Figure 7 – Typical turn-on energy vs. di/dt Figure 8 – Typical turn-off energy vs. collector current 4000 7000 T0900EB45A AD Issue 1 VCE=2800V VGE=±15V Tj=125°C 6000 3500 T0900EB45A AD Issue 1 RG(off)=5Ω CGE=100nF VGE=±15V Tj=125°C VCE=2800V 3000 Turn-on energy per pulse - E(off)(mJ) Turn-on energy per pulse - E(on)(mJ) 5000 IC=900A 4000 3000 2500 VCE=2000V 2000 1500 VCE=1000V 2000 1000 IC=500A 1000 500 0 200 0 0 1000 2000 3000 Provisional Data Sheet T0900EB45A Issue 1 400 600 800 1000 Collector current - IC (A) Commutation rate - di/dt (A/µs) Page 5 of 8 October, 2008 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0900EB45A Figure 9 – Turn-off energy vs voltage 4000 3500 Figure 10 – Safe operating area 2500 T0900EB45A AD Issue 1 T0900EA45A AD Issue 1 IC=900A RG(off)=5Ω CGE=100nF VGE=±15V Tj=125°C VGE=±15V Maximum LS=250nH Tj=125°C 2000 IC=500A 2500 Collector current - IC (A) Turn-off energy - Eoff (mJ) 3000 2000 IC=500A 1500 1500 1000 1000 500 IC=300A 500 0 500 0 1000 1500 2000 2500 0 3000 1000 2000 3000 4000 5000 Gollector-emitter voltage - VCE (V) Collector-emitter voltage - VCE (V) Figure 11 – Typical diode forward characteristic Figure 12 – Typical recovered charge 10000 1100 T0900EB45A Issue 1 T0900EB45A AD Issue 1 IF=900A Tj=125°C Tj=25°C Tj=125°C 1000 Recovered charge - Qrr (µC) Instantaneous forward current - IF (A) 900 100 700 Tj=25°C 500 300 500 10 0 2 4 6 Provisional Data Sheet T0900EB45A Issue 1 1000 1500 2000 2500 Commutation rate - di/dt (A/µs) Instantaneous forward voltage - VF (V) Page 6 of 8 October, 2008 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0900EB45A Figure 13 – Typical reverse recovery current 700 Figure 14 – Typical reverse recovery time 4 T0900EB45A AD Issue 1 T0900EB45A AD Issue 1 Tj=125°C IF=900A IF=900A 3.5 Tj=25°C Typical reverse recovery time - trr (µs) Typical reverse recovery current - Irm (A) 600 500 400 300 3 2.5 Tj=125°C 2 200 Tj=25°C 1.5 0 500 1000 1500 2000 2500 3000 0 Commutation rate - di/dt (A/µs) Transient thermal impedance junction to sink (K/W) Transient thermal impedance junction to sink (K/W) Emitter Collector Double Side 0.01 0.001 0.0001 0.00001 1E-05 0.0001 0.001 0.01 0.1 1 10 2000 2500 3000 Anode Cathode Double Side T0900EB45A AD Issue 1 0.01 0.001 0.0001 0.00001 1E-05 0.0001 0.001 100 Time (s) Provisional Data Sheet T0900EB45A Issue 1 1500 Figure 16 – Transient thermal impedance (Diode) 0.1 T0900EB45A Issue 1 1000 Commutation rate - di/dt (A/µs) Figure 15 – Transient thermal impedance (IGBT) 0.1 500 0.01 0.1 1 10 100 Time (s) Page 7 of 8 October, 2008 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0900EB45A Outline Drawing & Ordering Information 101A340 ORDERING INFORMATION (Please quote 10 digit code as below) T0900 EB 45 A Fixed type Code Fixed Outline Code Voltage Grade 4500 Fixed format code Typical order code: T0900EB45A (VCES = 4500V) IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] WESTCODE An IXYS Company www.westcode.com www.ixys.net Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Provisional Data Sheet T0900EB45A Issue 1 Page 8 of 8 October, 2008