Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC(DC) DC collector current, IGBT 160 A ICRM Repetitive peak collector current, tp=1ms, IGBT 320 A IF(DC) Continuous DC forward current, Diode 160 A IFRM Repetitive peak forward current, tp=1ms, Diode 320 A IFSM Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) 690 A IFSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) 760 A PMAX Maximum power dissipation, IGBT (Note 2) 1.47 kW (di/dt)cr Critical diode di/dt (note 3) 300 A/µs Tj Operating temperature range. -40 to +125 °C Tstg Storage temperature range. -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial. Data Sheet T0160NB45A Issue 1 Page 1 of 7 February, 2013 Insulated Gate Bi-polar Transistor Type T0160NB45A Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS - 2.70 3.15 IC = 160A, VGE = 15V, Tj = 25°C IC = 160A, VGE = 15V UNITS V VCE(sat) Collector – emitter saturation voltage - 3.40 3.80 VT0 Threshold voltage - - 1.71 rT Slope resistance - - 13.1 VGE(TH) Gate threshold voltage - 5.2 - VCE = VGE, IC = 18mA V ICES Collector – emitter cut-off current 5 15 VCE = VCES, VGE = 0V mA IGES Gate leakage current - - ±4 VGE = ±20V µA Cies Input capacitance - 30 - VCE = 25V, VGE = 0V, f = 1MHz nF td(on) Turn-on delay time - 3.0 - tr(V) Rise time - 2.5 - IC =160A, VCE =2800V, di/dt=300A/µs µs Qg(on) Turn-on gate charge - 4 - VGE = ±15V, Ls=200nH µC Eon Turn-on energy - 1.4 - Rg(ON)= 33Ω, Rg(OFF)=38Ω, CGE=22nF J td(off) Turn-off delay time - 1.8 - Integral diode used as freewheel diode µs tf(I) Fall time - 1.6 - (Note 3 & 4) µs Qg(off) Turn-off gate charge - 5 - µC Eoff Turn-off energy - 0.7 - J ISC Short circuit current - 550 - MIN TYP MAX TEST CONDITIONS - 3.25 3.60 IF = 160A, Tj =25°C V - 3.40 3.75 IF = 160A V - 2.04 V V Current range: 53.3 – 160A mΩ µs VGE=+15V, VCC=2800V, VCEmax≤VCES, tp≤10µs A Diode Characteristics PARAMETER VF Forward voltage VTo Threshold voltage - rT Slope resistance - - 10.7 Irm Peak reverse recovery current - 120 - Qrr Recovered charge - 300 - trr Reverse recovery time, 50% chord - 2.7 - Er Reverse recovery energy - 0.24 - MIN TYP MAX - - - - - - - - UNITS V Current range 53.3 - 160A mΩ A IF = 160A, VGE = -15V, di/dt=300A/µs µC µs J Thermal Characteristics PARAMETER RthJK RthJK Thermal resistance junction to sink, IGBT Thermal resistance junction to sink, Diode TEST CONDITIONS UNITS 72 Double side cooled K/kW 118 Collector side cooled K/kW 186 Emitter side cooled K/kW 172 Double side cooled K/kW - - 268 Cathode side cooled K/kW - - 478 Anode side cooled K/kW Note 2 F Mounting force 8 - 12 Wt Weight - 0.5 - kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements 3) CGE is additional gate – emitter capacitance added to output of gate drive 4) Figures 6 to 9 are obtained using integral diode as freewheeling diode Data Sheet T0160NB45A Issue 1 Page 2 of 7 February, 2013 Insulated Gate Bi-polar Transistor Type T0160NB45A Curves Figure 1 – Typical collector-emitter saturation voltage characteristics 1000 Figure 2 – Typical output characteristic 400 T0160NB45A Issue 1 V GE =+15V 25°C T0160NB45A Issue 1 T j =25°C 125°C 300 Collector current - Ic(A) Collector current - IC (A) 100 200 V GE = 20V V GE = 17V V GE = 15V V GE = 13V V GE = 11V 10 100 0 1 0 1 2 3 4 5 6 0 7 1 2 3 4 Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 15 400 V CE =2800V V GE =±15V C GE =22nF T j=125°C T0160NB45A Issue 1 T j=125°C T0160NB45A Issue 1 300 160A Turn-on delay time - td(on)(µs) 10 Collector current - Ic(A) 5 Collector to em itter saturation voltage - V CE(sat) (V) Collector to em itter saturation voltage - V CE(sat) (V) V GE = 20V V GE = 17V V GE = 15V V GE = 13V V GE = 11V 200 100A 5 100 0 0 0 1 2 3 4 5 6 Collector to em itter saturation voltage - V CE(sat) (V) Data Sheet T0160NB45A Issue 1 20 7 40 60 80 100 120 140 Gate resistance - R G(on) (Ω) Page 3 of 7 February, 2013 Insulated Gate Bi-polar Transistor Type T0160NB45A Figure 5 – Typical turn-off delay time vs. gate resistance Figure 6 – Typical turn-on energy vs. collector current 2 10 V CE=2800V V GE=±15V C GE=22nF T j=125°C T0160NB45A Issue 1 T0160NB45A Issue 1 R G(on)=33Ω C GE=22nF V GE=±15V T j=125°C 8 V CE=2800V 6 Turn-on energy per pulse - E(on)(J) Turn-off delay time - td(off)(µs) 160A 100A 4 1 V CE=2000V V CE=1000V 2 0 0 0 20 40 60 80 100 120 140 160 0 50 Gate resistance - R G(off) (Ω) 100 150 200 Collector current - IC (A) Figure 7 – Typical turn-on energy vs. di/dt Figure 8 – Typical turn-off energy vs. collector current 1.0 5 V CE=2800V V GE=±15V T j=125°C T0160NB45A Issue 1 R G(off)=38Ω C GE=22nF V GE=±15V T j=125°C T0160NB45A Issue 1 4 0.8 Turn-on energy per pulse - E (off)(J) Turn-on energy per pulse - E(on)(J) V CE=2800V 3 2 0.6 V CE=2000V 0.4 IC=160A V CE=1000V 1 0.2 IC=100A 0 0.0 0 100 200 300 400 0 Commutation rate - di/dt (A/µs) Data Sheet T0160NB45A Issue 1 50 100 150 200 Collector current - IC (A) Page 4 of 7 February, 2013 Insulated Gate Bi-polar Transistor Type T0160NB45A Figure 9 – Turn-off energy vs voltage Figure 10 – Safe operating area 1 400 R G(off)=38Ω C GE=22nF V GE=±15V Tj=125°C T0160NB45A Issue 1 V GE=±15V Maximum LS=200nH T j=125°C T0160NB45A Issue 1 0.8 300 Collector current - I C (A) Turn-off energy - Eoff (mJ) IC=160A 0.6 IC=100A 0.4 200 IC=70A 100 IC=50A 0.2 0 500 0 1000 1500 2000 2500 3000 0 3500 Figure 11 – Typical diode forward characteristics 1000 400 3000 4000 5000 T0160NB45A Issue 1 T j=125°C T j=125°C Typical recovered charge - Qrr (µC) Instantaneous forward current - IF (A) 2000 Figure 12 – Typical recovered charge T0160NB45A Issue 1 T j=25°C 1000 Gollector-emitter voltage - V CE (V) Collector-emitter voltage - VCE (V) 100 10 IC =160A 300 IC =100A 200 100 1 0 1 2 3 4 5 Instantaneous forward voltage - V F (V) Data Sheet T0160NB45A Issue 1 0 6 100 200 300 400 Commutation rate - di/dt (A/µs) Page 5 of 7 February, 2013 Insulated Gate Bi-polar Transistor Type T0160NB45A Figure 13 – Typical reverse recovery current 150 Figure 14 – Typical reverse recovery time 7 T0160NB45A Issue 1 T j=125°C 6 IC =160A IC =100A Typical reverse recovery time - trr (µs) Typical reverse recovery current - Irm (A) T0160NB45A Issue 1 T j=125°C 100 50 5 4 3 IC =160A IC =100A 2 0 1 0 100 200 300 400 0 100 Commutation rate - di/dt (A/µs) Figure 15 – Transient thermal impedance (IGBT) 1 Em itter Collector Double Side Transient thermal impedance junction to sink (K/W) Transient thermal impedance junction to sink (K/W) 400 T0160NB45A Issue 1 Anode Cathode Double Side 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.00001 300 Figure 16 – Transient thermal impedance (Diode) 10 T0160NB45A Issue 1 200 Commutation rate - di/dt (A/µs) 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.000001 1E-06 Data Sheet T0160NB45A Issue 1 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Tim e (s) Tim e (s) Page 6 of 7 February, 2013 Insulated Gate Bi-polar Transistor Type T0160NB45A Outline Drawing & Ordering Information 171A107 ORDERING INFORMATION T0160 NB Fixed type Code Fixed Outline Code (Please quote 10 digit code as below) 45 IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] A Fixed format code Voltage Grade VCES/100 45 Typical order code: T0160NB45A (VCES = 4500V) IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.net IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet T0160NB45A Issue 1 Page 7 of 7 February, 2013