Date:- 18 Feb, 2014 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T1500TB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC(DC) DC collector current, IGBT 1500 A ICRM Repetitive peak collector current, tp=1ms, IGBT 3000 A IECO Maximum reverse emitter current, tp=100µs, (note 2 & 3) 1500 A PMAX Maximum power dissipation, IGBT (Note 2) 7.8 kW Tj Operating temperature range. -40 to +125 °C Tstg Storage temperature range. -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 300nH. Data Sheet T1500TB25E Issue 1 Page 1 of 6 February, 2014 Insulated Gate Bi-polar Transistor Type T1500TB25E Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS - 2.1 2.4 IC = 1500A, VGE = 15V, Tj = 25°C - 2.9 3.2 IC = 1500A, VGE = 15V UNITS V VCE(sat) Collector – emitter saturation voltage VT0 Threshold voltage - 1.31 rT Slope resistance - 1.26 VGE(TH) Gate threshold voltage - 5.8 6.3 VCE = VGE, IC = 125mA V ICES Collector – emitter cut-off current - 15 40 VCE = VCES, VGE = 0V mA IGES Gate leakage current - 7 ±25 VGE = ±20V µA Cies Input capacitance - 200 - VCE = 25V, VGE = 0V, f = 100kHz, Tj=25°C nF td(on) Turn-on delay time - 0.7 - tr(V) Rise time - 2.8 - IC =1500A, VCE =1250V, di/dt=2500A/µs µs Qg(on) Turn-on gate charge - 10 - VGE = ±15V, Ls=200nH µC Eon Turn-on energy - 3.5 - Rg(ON)= 1.8Ω, Rg(OFF)= 3.6Ω, CGE=68nF J td(off) Turn-off delay time - 3 - tf(I) Fall time - 2.8 - Freewheel diode type E2250VF25C at Tj=125°C µs Qg(off) Turn-off gate charge - 9 - µC Eoff Turn-off energy - 2.6 - J ISC Short circuit current - 4150 - MIN TYP MAX TEST CONDITIONS UNITS - - 12.9 Double side cooled K/kW - - 19.8 Collector side cooled K/kW - - 37 Emitter side cooled K/kW 15 - 25 Note 2 - 1.2 - V V Current range: 500A – 1500A mΩ µs VGE=+15V, VCC=1250V, VCEmax≤VCES, tp≤10µs µs A Thermal Characteristics PARAMETER RthJK Thermal resistance junction to sink, IGBT F Mounting force Wt Weight kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements 3) CGE is additional gate – emitter capacitance added to output of gate drive Data Sheet T1500TB25E Issue 1 Page 2 of 6 February, 2014 Insulated Gate Bi-polar Transistor Type T1500TB25E Curves Figure 1 – Typical collector-emitter saturation voltage characteristics Figure 2 – Typical output characteristic 4000 10000 T1500TB25E Issue 1 T1500TB25E Issue 1 V GE =+15V T j =25°C 25°C 125°C 3000 Collector current - Ic(A) Collector current - IC (A) 1000 2000 V GE = 20V V GE = 17V V GE = 15V V GE = 12V V GE = 10V 100 1000 10 0 0 1 2 3 4 5 6 0 Collector to em itter saturation voltage - V CE(sat) (V) 1 2 3 Collector to em itter saturation voltage - V CE(sat) (V) 4 Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 6 4000 T1500TB25E Is s u e 1 V CE= 125 0V IC = 1 5 0 0 A V GE= ±1 5V C GE= 6 8nF T j = 1 2 5 °C T1500TB25E Issue 1 T j =125°C 5 IC = 1 5 0 0 A IC = 8 0 0 A 3000 Turn-on delay time - td(on)(µs) Collector current - Ic(A) 4 2000 2 V G E = 20V V G E = 17V V G E = 15V V G E = 12V V G E = 10V 1000 3 1 0 0 0 1 2 3 4 C ollector to em itter saturation voltage - V CE(sat) (V) Data Sheet T1500TB25E Issue 1 0 5 2 4 6 8 10 12 G a te re s is ta n c e - R G (o n ) (Ω ) Page 3 of 6 February, 2014 14 Insulated Gate Bi-polar Transistor Type T1500TB25E Figure 5 – Typical turn-off delay time vs. gate resistance Figure 6 – Typical turn-on energy vs. collector current 4000 6 V CE=1250V V GE=±15V IC=1500A C GE=68nF Tj=125°C T1500TB25E Issue 1 T1500TB25E Issue 1 R G(on)=1.8Ω C GE=68nF V GE=±15V T j=125°C V CE=1250V IC=1500A 3000 Turn-on energy per pulse - E(on)(mJ) Turn-off delay time - td(off)(µs) 5 IC=800A 4 V CE=1000V 2000 V CE=600V 1000 3 2 0 2 4 6 8 10 12 14 Gate resistance - R G(off) (Ω) 16 18 0 500 1000 1500 2000 Collector current - IC (A) Figure 7 – Typical turn-on energy vs. di/dt Figure 8 – Typical turn-off energy vs. collector current 12000 3000 V CE =1250V V GE =±15V T j=125°C T1500TB25E Issue 1 T1500TB25E Issue 1 R G (off) =3.6Ω C G E =68nF V G E =±15V T j=125°C 10000 V CE =1250V 2500 Turn-on energy per pulse - E (off)(mJ) Turn-on energy per pulse - E(on)(mJ) V CE =1000V 8000 6000 4000 I C =1500A 2000 I C =800A 2000 1500 V CE =600V 1000 500 0 0 0 500 1000 1500 2000 2500 3000 Com m utation rate - di/dt (A/µs) Data Sheet T1500TB25E Issue 1 Page 4 of 6 0 500 1000 1500 Collector current - I C (A) 2000 February, 2014 Insulated Gate Bi-polar Transistor Type T1500TB25E Figure 9 – Turn-off energy vs voltage Figure 10 – Safe operating area 3500 3000 V GE=±15V Maximum L S=300nH T j=125°C T1500TB25E Issue 1 R G(off)=3.6Ω C GE=68nF V GE=±15V Tj=125°C 2500 IC=1500A T1500TB25E Issue 1 3000 IC=1200A 2500 Collector current - IC (A) Turn-off energy - Eoff (mJ) 2000 IC=800A 1500 IC=500A 2000 1500 1000 1000 500 500 0 400 0 600 800 1000 1200 1400 0 Collector-emitter voltage - V CE (V) 500 1000 1500 2000 2500 3000 Collector-emitter voltage - V CE (V) Figure 11 – Transient thermal impedance 0.1 Transient thermal impedance junction to sink (K/W) T1500TB25E Issue 1 Emitter Collector Double Side 0.01 0.001 0.0001 0.00001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Time (s) Data Sheet T1500TB25E Issue 1 Page 5 of 6 February, 2014 Insulated Gate Bi-polar Transistor Type T1500TB25E Outline Drawing & Ordering Information 171A108 ORDERING INFORMATION T1500 TB Fixed type Code Fixed Outline Code (Please quote 10 digit code as below) 25 IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] E Fixed format code Voltage Grade VCES/100 25 Typical order code: T1500TB25E (VCES = 2500V) IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.net IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet T1500TB25E Issue 1 Page 6 of 6 February, 2014