HAT2036R Silicon N Channel Power MOS FET Power Switching REJ03G1166-0600 (Previous: ADE-208-665D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 12 mΩ typ • Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching tf = 60 ns typ. Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 5 6 7 8 D D D D 65 87 1, 2, 3 4 5, 6, 7, 8 4 G 12 34 S S S 1 2 3 Rev.6.00 Sep 07, 2005 page 1 of 4 Source Gate Drain HAT2036R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 30 Unit V VGSS ID ±20 12 V A 96 12 A A 2.5 150 W °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel temperature Pch Tch °C Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 30 Typ — Max — Unit V IGSS IDSS — — — — ±0.1 1 µA µA VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) 1.5 — — 12 3.0 15 V mΩ VDS = 10 V, ID = 1 mA Note 3 ID = 6 A, VGS = 10 V Forward transfer admittance RDS (on) |yfs| — 12 20 20 30 — mΩ S ID = 6 A, VGS = 4.5 V Note 3 ID = 6 A, VDS = 10 V Input capacitance Output capacitance Ciss Coss — — 1200 380 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 200 23 — — pF nC VDS = 10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 4.0 6.0 — — nC nC VDD = 10 V VGS = 10 V ID = 12 A Turn-on delay time Rise time td (on) tr — — 40 300 — — ns ns VGS = 4.5 V, ID = 6 A, VDD ≅ 10 V Turn-off delay time Fall time td (off) tf — — 35 60 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — 0.9 35 — — V ns Gate to source leak current Zero gate voltage drain current Note: 3. Pulse test Rev.6.00 Sep 07, 2005 page 2 of 4 Test Conditions ID = 10 mA, VGS = 0 Note 3 IF = 12 A, VGS = 0 IF = 12 A, VGS = 0 diF/dt = 20 A/µs Note 3 HAT2036R Main Characteristics Power vs. Temperature Derating Channel Dissipation Pch (W) 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3.0 2.0 1.0 0 0 50 100 Ambient Temperature Rev.6.00 Sep 07, 2005 page 3 of 4 150 200 Ta (°C) HAT2036R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name Quantity Shipping Container HAT2036R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Sep 07, 2005 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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