HAT2108R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1188-0500 (Previous: ADE-208-1574C) Rev.5.00 Sep 07, 2005 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 12 4 G 1, 3 2, 4 5, 6, 7, 8 34 S1 MOS1 Rev.5.00 Sep 07, 2005 page 1 of 3 5 6 D D S3 MOS2 Source Gate Drain HAT2108R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Value 28 Unit V VGSS ID ±12 11 V A 88 11 A A Pch Note 3 Pch 2 3 W W Tch Tstg 150 –55 to +150 °C °C ID (pulse) IDR Note 1 Note 2 Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 28 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±12 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±10 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS (off) — 0.4 — — 1 1.4 µA V VDS = 28 V, VGS = 0 VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS (on) RDS (on) — — 12 15 15 22 mΩ mΩ ID = 5.5 A, VGS = 4 V Note 4 ID = 5.5 A, VGS = 2.5 V Forward transfer admittance Input capacitance |yfs| Ciss 17 — 28 2200 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 400 240 — — pF pF ID = 5.5 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Gate to source charge Qg Qgs — — 16 5.2 — — nC nC Gate to drain charge Turn-on delay time Qgd td (on) — — 4.8 30 — — nC ns Rise time Turn-off delay time tr td (off) — — 35 70 — — ns ns Fall time Body-drain diode forward voltage tf VDF — — 25 0.85 — 1.11 ns V trr — 40 — ns Body-drain diode reverse recovery time Note: 4. Pulse test Rev.5.00 Sep 07, 2005 page 2 of 3 Note 4 Note 4 VDD = 10 V VGS = 4 V ID = 11 A VGS = 4 V, ID = 5.5 A VDD ≅ 10 V RL = 1.81 Ω Rg = 4.7 Ω IF = 11 A, VGS = 0 IF = 11 A, VGS = 0 diF/dt = 50 A/µs Note 4 HAT2108R Package Dimensions JEITA Package Code RENESAS Code P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-D Package Name FP-8DAV 0.085g F *1 D MASS[Typ.] bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) *3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.40 0.46 0.15 0.20 0.25 1.75 A A bp A1 b1 c L c1 0° y HE Detail F 5.80 e 8° 6.10 6.20 1.27 x 0.25 y 0.1 Z 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name Quantity Shipping Container HAT2108R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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