RENESAS HAT2108R-EL-E

HAT2108R
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G1188-0500
(Previous: ADE-208-1574C)
Rev.5.00
Sep 07, 2005
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
65
87
2
G
12
4
G
1, 3
2, 4
5, 6, 7, 8
34
S1
MOS1
Rev.5.00 Sep 07, 2005 page 1 of 3
5 6
D D
S3
MOS2
Source
Gate
Drain
HAT2108R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
28
Unit
V
VGSS
ID
±12
11
V
A
88
11
A
A
Pch
Note 3
Pch
2
3
W
W
Tch
Tstg
150
–55 to +150
°C
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
28
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±12
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±10 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
VGS (off)
—
0.4
—
—
1
1.4
µA
V
VDS = 28 V, VGS = 0
VDS = 10 V, ID = 1 mA
Static drain to source on state resistance
RDS (on)
RDS (on)
—
—
12
15
15
22
mΩ
mΩ
ID = 5.5 A, VGS = 4 V
Note 4
ID = 5.5 A, VGS = 2.5 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
17
—
28
2200
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
400
240
—
—
pF
pF
ID = 5.5 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Gate to source charge
Qg
Qgs
—
—
16
5.2
—
—
nC
nC
Gate to drain charge
Turn-on delay time
Qgd
td (on)
—
—
4.8
30
—
—
nC
ns
Rise time
Turn-off delay time
tr
td (off)
—
—
35
70
—
—
ns
ns
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
25
0.85
—
1.11
ns
V
trr
—
40
—
ns
Body-drain diode reverse recovery time
Note:
4. Pulse test
Rev.5.00 Sep 07, 2005 page 2 of 3
Note 4
Note 4
VDD = 10 V
VGS = 4 V
ID = 11 A
VGS = 4 V, ID = 5.5 A
VDD ≅ 10 V
RL = 1.81 Ω
Rg = 4.7 Ω
IF = 11 A, VGS = 0
IF = 11 A, VGS = 0
diF/dt = 50 A/µs
Note 4
HAT2108R
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT2108R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Sep 07, 2005 page 3 of 3
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Colophon .3.0