HAT1044M Silicon P Channel Power MOS FET Power Switching REJ03G1152-0600 (Previous: ADE-208-753D) Rev.6.00 Sep 07, 2005 Features • • • • Low on-resistance Low drive current High density mounting 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6) 1 2 5 6 D D D D 6 5 4 1 2 3 4 3 1, 2, 5, 6 3 G S 4 Rev.6.00 Sep 07, 2005 page 1 of 3 Source Gate Drain HAT1044M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value –30 Unit V VGSS ±20 –4.5 V A –18 –4.5 A A Pch (pulse) Note 3 Pch (continuous) 2.0 1.05 W W Tch Tstg 150 –55 to +150 °C °C Gate to source voltage Drain current ID Note 2 Note 1 Drain peak current Body-drain diode reverse drain current ID (pulse) Note 2 IDR Note 2 Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C 3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min –30 Typ — Max — Unit V IGSS IDSS — — — — ±0.1 –1 µA µA VGS = ±20 V, VDS = 0 VDS = –30 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) –1.0 — — 50 –2.5 60 V mΩ VDS = –10 V, ID = –1 mA Note 4 ID = –3 A, VGS = –10 V Forward transfer admittance RDS (on) |yfs| — 3 80 5.5 105 — mΩ S ID = –3 A, VGS = –4.5 V Note 4 ID = –3 A, VDS = –10 V Input capacitance Output capacitance Ciss Coss — — 600 220 — — pF pF Reverse transfer capacitance Total gate charge Crss Qg — — 150 13 — — pF nC VDS = –10 V VGS = 0 f = 1 MHz Gate to source charge Gate to drain charge Qgs Qgd — — 2 3 — — nC nC VDS = 10 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr — — 12 85 — — ns ns VGS = –10 V, ID = –3 A, RL = 3.3 Ω Turn-off delay time Fall time td (off) tf — — 55 55 — — ns ns Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr — — –0.95 50 — — V ns Gate to source leak current Zero gate voltage drain current Note: 4. Pulse test Rev.6.00 Sep 07, 2005 page 2 of 3 Test Conditions ID = –10 mA, VGS = 0 Note 4 IF = –4.5 A, VGS = 0 IF = –4.5 A, VGS = 0 diF/dt = –20 A/µs Note 4 HAT1044M Package Dimensions JEITA Package Code RENESAS Code SC-95 Modified Package Name PTSP0006FA-A MASS[Typ.] TSOP-6 / TSOP-6V D 0.012g A e Q E c HE L LP L1 A Reference Symbol A3 A x M S b A e A2 A e1 A1 y S S b b1 I1 c1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x y b2 e1 I1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.1 2.8 1.45 2.6 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.3 0.13 0.11 2.95 1.6 1.0 2.8 Max 1.1 0.1 1.0 0.4 0.15 3.1 1.75 3.0 0.7 0.5 0.6 0.05 0.05 0.45 2.2 0.8 0.2 Ordering Information Part Name Quantity Shipping Container HAT1044M-EL-E 3000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Sep 07, 2005 page 3 of 3 Sales Strategic Planning Div. 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