H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0200 (Previous: ADE-208-1373) Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 S 2 3 Rev.2.00 Sep 07, 2005 page 1 of 4 H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value 200 Unit V VGSS ID ±30 6 V A 24 6 A A 24 25 A W θ ch-c Tch 5 150 °C/W °C Tstg –55 to +150 °C Gate to source voltage Drain current Note 1 Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Body-drain diode reverse drain peak current Channel dissipation IDR (pulse) Note 2 Pch Note 1 Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 200 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 IGSS IDSS — — — — ±0.1 1 µA µA VGS = ±30 V, VDS = 0 VDS = 200 V, VGS = 0 VGS (off) RDS (on) 3.0 — — 0.52 4.5 0.65 V Ω VDS = 10 V, ID = 1 mA Note 3 ID = 3 A, VGS = 10 V Forward transfer admittance Input capacitance |yfs| Ciss 2.0 — 3.4 300 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 44 12.5 — — pF pF ID = 3 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz Total gate charge Gate to source charge Qg Qgs — — 9.8 2.0 — — nC nC Gate to drain charge Turn-on delay time Qgd td (on) — — 5.2 23 — — nC ns tr 24 43.5 — — ns ns Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance VDD = 160 V VGS = 10 V ID = 6 A ID = 3 A VGS = 10 V RL = 33.3 Ω Rg = 10 Ω Rise time Turn-off delay time td (off) — — Fall time Body-drain diode forward voltage tf VDF — — 11 1.0 — 1.5 ns V IF = 6 A, VGS = 0 Body-drain diode reverse recovery time Body-drain diode reverse recovery charge trr Qrr — — 90 400 — — ns nC IF = 6 A, VGS = 0 diF/dt = 100 A/µs Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 4 Note 3 H5N2005DL, H5N2005DS Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 ± 0.5 JEITA Package Code 2.3 ± 0.2 0.55 ± 0.1 1.2 ± 0.3 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 4.7 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 ± 0.5 5.4 ± 0.5 (0.1) Unit: mm 2.3 ± 0.2 0.55 ± 0.1 0 – 0.25 2.5 ± 0.5 (1.2) 1.0 Max. 2.29 ± 0.5 Rev.2.00 Sep 07, 2005 page 3 of 4 (5.1) (5.1) (0.1) 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 JEITA Package Code 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 H5N2005DL, H5N2005DS Ordering Information Part Name H5N2005DL-E H5N2005DSTL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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