H5N5004PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1113-0200 (Previous: ADE-208-1381) Rev.2.00 Sep 07, 2005 Features • • • • • • Low on-resistance: R DS (on) = 0.09 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 3 2 3 S H5N5004PL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value 500 Unit V VGSS ID ±30 50 V A 200 50 A A 200 15 A A 250 0.5 W °C/W 150 –55 to +150 °C °C Gate to source voltage Drain current Note 1 Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Body-drain diode reverse drain peak current Avalanche current IDR (pulse) Note 3 IAP Note 1 Note 2 Channel dissipation Channel to case thermal Impedance Pch θ ch-c Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 500 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 IGSS IDSS — — — — ±0.1 10 µA µA VGS = ±30 V, VDS = 0 VDS = 500 V, VGS = 0 VGS (off) RDS (on) 2.0 — — 0.09 4.0 0.11 V Ω VDS = 10 V, ID = 1 mA Note 4 ID = 25 A, VGS = 10 V Forward transfer admittance Input capacitance |yfs| Ciss 27 — 45 7630 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 770 160 — — pF pF ID = 25 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr — — 90 340 — — ns ns Turn-off delay time Fall time td (off) tf — — 370 280 — — ns ns Total gate charge Gate to source charge Qg Qgs — — 220 30 — — nC nC Gate to drain charge Body-drain diode forward voltage Qgd VDF — — 110 0.98 — 1.5 nC V IF = 50 A, VGS = 0 trr Qrr — — 190 1.3 — — ns µC IF = 50 A, VGS = 0 diF/dt = 100 A/µs Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 3 ID = 25 A VGS = 10 V RL = 10 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 50 A Note 4 H5N5004PL Package Dimensions RENESAS Code PRSS0004ZF-A Package Name MASS[Typ.] TO-3PL / TO-3PLV Unit: mm 9.9g 5.0 ± 0.2 20.0 ± 0.3 φ3.3 ± 0.2 20.0 ± 0.6 2.5 ± 0.3 26.0 ± 0.3 6.0 ± 0.2 JEITA Package Code 1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 5.45 ± 0.5 0.6 +0.25 –0.1 2.8 ± 0.2 1.0 3.8 7.4 Ordering Information Part Name Quantity Shipping Container H5N5004PL-E 500 pcs Box (Case) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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