RENESAS H5N5004PL_05

H5N5004PL
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1113-0200
(Previous: ADE-208-1381)
Rev.2.00
Sep 07, 2005
Features
•
•
•
•
•
•
Low on-resistance: R DS (on) = 0.09 Ω typ.
Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)
Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A)
Avalanche ratings
Built-in fast recovery diode: trr = 190 ns typ
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
Rev.2.00 Sep 07, 2005 page 1 of 3
2
3
S
H5N5004PL
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Value
500
Unit
V
VGSS
ID
±30
50
V
A
200
50
A
A
200
15
A
A
250
0.5
W
°C/W
150
–55 to +150
°C
°C
Gate to source voltage
Drain current
Note 1
Drain peak current
Body-drain diode reverse drain current
ID (pulse)
IDR
Body-drain diode reverse drain peak current
Avalanche current
IDR (pulse)
Note 3
IAP
Note 1
Note 2
Channel dissipation
Channel to case thermal Impedance
Pch
θ ch-c
Channel temperature
Storage temperature
Tch
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
500
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
IGSS
IDSS
—
—
—
—
±0.1
10
µA
µA
VGS = ±30 V, VDS = 0
VDS = 500 V, VGS = 0
VGS (off)
RDS (on)
2.0
—
—
0.09
4.0
0.11
V
Ω
VDS = 10 V, ID = 1 mA
Note 4
ID = 25 A, VGS = 10 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
27
—
45
7630
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
770
160
—
—
pF
pF
ID = 25 A, VDS = 10 V
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
90
340
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
370
280
—
—
ns
ns
Total gate charge
Gate to source charge
Qg
Qgs
—
—
220
30
—
—
nC
nC
Gate to drain charge
Body-drain diode forward voltage
Qgd
VDF
—
—
110
0.98
—
1.5
nC
V
IF = 50 A, VGS = 0
trr
Qrr
—
—
190
1.3
—
—
ns
µC
IF = 50 A, VGS = 0
diF/dt = 100 A/µs
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
Note:
4. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 3
ID = 25 A
VGS = 10 V
RL = 10 Ω
Rg = 10 Ω
VDD = 400 V
VGS = 10 V
ID = 50 A
Note 4
H5N5004PL
Package Dimensions
RENESAS Code

PRSS0004ZF-A
Package Name
MASS[Typ.]
TO-3PL / TO-3PLV
Unit: mm
9.9g
5.0 ± 0.2
20.0 ± 0.3
φ3.3 ± 0.2
20.0 ± 0.6
2.5 ± 0.3
26.0 ± 0.3
6.0 ± 0.2
JEITA Package Code
1.4
3.0
2.2
1.2 +0.25
–0.1
5.45 ± 0.5
5.45 ± 0.5
0.6 +0.25
–0.1
2.8 ± 0.2
1.0
3.8
7.4
Ordering Information
Part Name
Quantity
Shipping Container
H5N5004PL-E
500 pcs
Box (Case)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 3 of 3
Sales Strategic Planning Div.
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