IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE(sat) typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions 1200 V ± 20 V 95 60 A A 100 VCES A 10 µs 375 W • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • ISOPLUS 247TM package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline Applications Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 60 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff Cies QGon 2.1 2.5 4.5 2.7 V V 6.5 V 0.1 mA mA 200 nA 0.1 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 60 A VGE = ±15 V; RG = 22 Ω 80 50 680 30 7.2 4.8 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A 3.8 350 nF nC 0.66 0.33 K/W K/W 331 RthJC RthJH • single switches and with complementary free wheeling diodes • choppers • phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXER 60N120 Component Symbol Equivalent Circuits for Simulation Conditions TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case Weight Maximum Ratings -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 30 pF 6 g Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.99 V; R0 = 25 mΩ Thermal Response IGBT (typ.) Cth1 = 0.13 J/K; Rth1 = 0.06 K/W Cth2 = 0.32 J/K; Rth2 = 0.27 K/W ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 331 A A1 A2 b b1 b2 C D E e L L1 Q R S T U Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 13.21 13.72 15.75 16.26 1.65 3.03 © 2003 IXYS All rights reserved 2-4 IXER 60N120 120 VGE = 17 V A 15 V 120 A 100 13 V 11 V 100 15 V 13 V VGE = 17 V 11 V IC IC 80 80 60 60 9V 9V 40 40 20 20 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 V 3 0 4 1 2 3 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 160 20 VCE = 20 V A IC V 4 VCE V 120 15 VGE 80 10 40 5 TVJ = 125°C VCE = 600 V IC = 50 A TVJ = 25°C 0 0 4 6 8 10 12 V 14 0 100 200 300 VGE QG Fig. 4 Typ. turn on gate charge 331 Fig. 3 Typ. transfer characteristics 400 nC 500 © 2003 IXYS All rights reserved 3-4 IXER 60N120 20 td(on) mJ 16 8 100 ns 90 tr 12 70 t Eoff VCE = 600 V VGE = ±15 V Eon VCE = 600 V VGE = ±15 V 4 40 60 80 2 20 200 Eoff tf 0 100 A 120 20 40 60 Typ. turn on energy and switching times versus collector current 15.0 VCE = 600 V VGE = ±15 V IC = 50 A TVJ = 125°C mJ 12.5 Eon 10.0 td(on) 7.5 Fig. 6 Typ. turn off energy and switching times versus collector current 12 300 ns 250 200 10 t Eoff 8 6 100 4 2.5 50 2 0.0 0 0 tr 5.0 0 20 40 60 80 100 Ω 120 VCE = 600 V VGE = ±15 V IC = 50 A TVJ = 125°C mJ 150 Eon td(off) t 600 400 Eoff 200 tf 0 20 40 60 0 100 Ω 120 80 RG Typ. turn on energy and switching times versus gate resistor 120 Fig. 8 Typ. turn off energy and switching times versus gate resistor 1 A K/W 100 ICM 1200 ns 1000 800 RG Fig. 7 0 100 A 80 IC IC Fig. 5 400 RG = 22 Ω TVJ = 125°C 30 0 20 600 t 10 0 0 6 40 RG = 22 Ω TVJ = 125°C 4 td(off) 60 50 8 ns mJ 80 Eon 800 80 0.1 ZthJC 60 0.01 40 single pulse 0.001 RG = 22 Ω TVJ = 125°C 20 0 0 200 400 600 800 1000 1200 1400 V VCE Reverse biased safe operating area RBSOA IXER60N120 0.001 0.01 0.1 1 s 10 t Fig. 10 Typ. transient thermal impedance 331 Fig. 9 0.0001 0.0001 © 2003 IXYS All rights reserved 4-4